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WO/2018/191454A1 |
Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk application...
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WO/2018/180153A1 |
The present invention provides a polishing composition whereby it becomes possible to provide a silicon wafer that is reduced in the occurrence of edge roll off and is improved in the overall flatness when the silicon wafer is roughly po...
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WO/2018/182087A1 |
The present invention relates to a ski wax composition comprising superhydrophobic carbon nanoparticles, and a preparation method therefor and, specifically, to a ski wax composition comprising a wax and superhydrophobic carbon nanoparti...
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WO/2018/183310A1 |
The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2): Formula (I) at least one compound of structure (I): (I),...
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WO/2018/174008A1 |
Provided is a polishing composition which is capable of effectively improving the polishing rate. The present invention provides a polishing composition for polishing a polishing object material. This polishing composition contains water...
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WO/2018/173814A1 |
The present invention provides a polishing composition that is capable of attaining adequate planarization and has a low etching speed while having a high polishing speed. The present invention is a polishing composition including abrasi...
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WO/2018/168206A1 |
The present invention provides a polishing composition which can be used to reduce an unintended height difference occurring between different materials or an unintended height difference occurring between sparse and dense portions of a ...
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WO/2018/159530A1 |
One objective of the present invention is to provide a polishing solution which is not likely to cause dishing and defects on a polished surface when applied to CMP of an object to be polished, said object containing a cobalt-containing ...
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WO/2018/156629A1 |
A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surf...
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WO/2018/157087A1 |
Ooids, microabrasive compositions containing ooids and methods of making microabrasive compositions containing ooids are described. Generally, ooids represent small particles, which are selectable for size, size distribution, and other c...
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WO/2018/156678A1 |
Fluid synthesis system and corresponding method for synthesis of slurry containing abrasive particles. The system and method are configured to substantially segregate the abrasive particles passing through the filter, used at the filteri...
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WO/2018/150799A1 |
This floor coating agent composition comprises: a main agent (X) which can form a coating film, and contains a water dispersion (a1) of an acrylic polymer having a carboxyl group and a glass transition temperature of less than 70ºC, and...
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WO/2018/150856A1 |
[Problem] To provide a polishing composition having excellent performance of eliminating protrusions formed on the periphery of a hard laser mark. [Solution] A polishing composition comprising abrasive grains, a water-soluble polymer, a ...
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WO/2018/147074A1 |
Provided is a polishing liquid which is used to polish a surface-to-be-polished that contains a tungsten material, wherein: the polishing liquid contains abrasive grains, a polymer having cationic groups at terminals, an oxidizing agent,...
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WO/2018/139492A1 |
Provided are a processing medium which combines rust-preventive performance with metal-contamination-preventing performance, a processing composition, and a processing method. The processing medium according to the present invention cont...
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WO/2018/136511A1 |
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly effica...
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WO/2018/131508A1 |
[Problem] To provide a polishing composition with which it is possible to use abrasive grains that do not cause defects and increase a mechanical friction effect to polish, at high speed, a substrate on which a coating film of silica or ...
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WO/2018/128849A1 |
The invention provides a chemical mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing compositi...
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WO/2018/124226A1 |
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, an inorganic alkali compound, polyglycerol, and a multi-chain polyoxy...
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WO/2018/123875A1 |
The present invention provides: a means for preventing sedimentation of abrasive grains while maintaining polishing performance; and a means for improving re-dispersibility of abrasive grains while maintaining polishing performance. The ...
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WO/2018/120809A1 |
The present invention provides a chemical-mechanical polishing liquid for flattening a barrier layer, comprising: abrasive particles, an azole compound, a complexing agent, a nonionic surfactant, and an oxidizing agent. The nonionic surf...
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WO/2018/124017A1 |
Provided in one embodiment are cerium oxide abrasive grains with which it is possible to improve a polishing rate. The present disclosure, in one embodiment, pertains to cerium oxide abrasive grains to be used in an abrasive, wherein the...
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WO/2018/124013A1 |
In one embodiment, provided is a cerium oxide abrasive grain with which it is possible to improve the polishing rate. The present disclosure, in one embodiment, pertains to a cerium oxide abrasive grain used for an abrasive, wherein the ...
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WO/2018/125905A1 |
The present disclosure provides chemical mechanical polishing compositions that achieve minimal dishing at reduced dishing reducer (DR) levels when compared to known CMP compositions. The compositions of the disclosure include a dynamic ...
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WO/2018/120812A1 |
A chemical mechanical polishing liquid used for planarizing a barrier layer and a use thereof, the polishing liquid comprising silicon dioxide particles, an azole compound, a complexing agent, a siloxane surfactant, and an oxidizing agen...
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WO/2018/124229A1 |
Provided is a polishing composition which is capable of further reducing microdefects and haze on polished wafers. The polishing composition includes silica particles, a basic compound, and polyglycerol. The mass ratio of silica to polyg...
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WO/2018/120808A1 |
Provided is a chem-mechanical polishing liquid for planarization of a barrier layer, comprising abrasive particles, an azole compound, a complexing agent, a nonionic surfactant and an oxygenant, wherein the nonionic surfactant is a block...
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WO/2018/120811A1 |
A chemical-mechanical polishing solution, comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, and at least one sulphonate anionic surfactant. The polishing solution can be used for polishing copper metal...
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WO/2018/116521A1 |
A polishing liquid of the present invention comprises manganese oxide grindstone particles, permanganate ions, and a cellulose-based surfactant or a cationic surfactant, and has a pH of 5 to 11. The cellulose-based surfactant is preferab...
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WO/2018/116890A1 |
Provided is a polishing composition capable of attaining a high polishing rate. The polishing composition comprises abrasive silica grains, a pH regulator, and water. The affinity AV between the abrasive silica grains and the water is 0....
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WO/2018/099110A1 |
A silicon nitride chemical-mechanical polishing solution, comprising abrasive particles, a compound containing one or more carboxyl groups, and an anionic surfactant containing long alkyl chains. The silicon nitride chemical-mechanical p...
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WO/2018/099109A1 |
A chemical-mechanical polishing solution having high silicon nitride selectivity, comprising abrasive particles and a compound containing one or more carboxyl groups. The polishing solution has a high SiN polishing rate, a low Teos polis...
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WO/2018/099111A1 |
The present invention relates to a chemical-mechanical polishing solution having high silicon nitride selectivity, comprising water and abrasive particles and further comprising a heterocyclic compound containing one or more carboxyl gro...
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WO/2018/101583A1 |
A slurry composition for polishing an organic film of the present invention comprises an oxidant, an organic acid, a polishing accelerator comprising a repeating unit derived from maleic acid or maleic anhydride, and water, wherein the p...
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WO/2018/096991A1 |
Provided is a polishing composition containing a cellulose derivative, the polishing composition being effective in giving polished surfaces having few defects. This application provides a polishing composition comprising abrasive grains...
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WO/2018/097261A1 |
The present invention provides a method for polishing a glass substrate, which is capable of maintaining a polishing rate that is higher than ever before for a long period of time in a glass substrate polishing process wherein cerium oxi...
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WO/2018/088370A1 |
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. These abrasive particles have ...
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WO/2018/088371A1 |
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. The product of the abrasive pa...
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WO/2018/075409A2 |
The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein...
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WO/2018/071285A1 |
CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO)...
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WO/2018/067491A1 |
An acrylic polymer comprising from 3 to 17 wt% polymerized units of carboxylic acid monomer. The polymer is at least partially neutralized with an amino alcohol having a primary amino group.
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WO/2018/058397A1 |
A process for chemical-mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, guar gum, a dicarboxylic acid, a source...
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WO/2018/061656A1 |
The purpose of the present invention is to provide, in a method for producing a cationically modified silica which includes modifying a silica raw material using a silane coupling agent, a means for enabling suppression of the occurrence...
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WO/2018/058395A1 |
A process for chemical-mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, xanthan gum, a dicarboxylic acid, a sou...
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WO/2018/058396A1 |
A process for chemical mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, alginate, a dicarboxylic acid, a source...
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WO/2018/055985A1 |
[Problem] To provide a polishing composition with which it is possible to effectively improve the polishing rate of an object to be polished. [Solution] A polishing composition containing abrasive grains, a polishing accelerator having a...
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WO/2018/057674A1 |
A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxide...
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WO/2018/056122A1 |
Provided is a slurry containing abrasive particles, glycol, and water, wherein the average particle size of the abrasive particles is 120 nm or less, and the pH of the slurry is at least 4.0 and less than 8.0. Also provided is a polishin...
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WO/2018/048068A1 |
The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surfac...
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WO/2018/038885A1 |
An acidic slurry composition for use in chemical-mechanical polishing including an acid pH adjuster and a cationic polishing suppressant comprising a quaternized aromatic heterocycle. The quaternized aromatic heterocycle imparts a polish...
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