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WO/2021/199723A1 |
A polishing composition is provided with which it is possible to obtain polished substrates having improved surface quality. The polishing composition comprises abrasive grains, a water-soluble polymer, a basic compound, and water. The p...
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WO/2021/202342A1 |
This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion i...
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WO/2021/191568A1 |
The invention relates to a method for treating a surface of a metallic part in particular of a turbomachine, the method comprising a step of shot-peening a surface (10) of the metallic part (8) using metallic beads (6) and a step of clea...
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WO/2021/182276A1 |
Provided is a polishing composition capable of improving a surface quality of a polished object. A polishing composition includes abrasive grains, a water-soluble copolymer, a basic compound and water. The water-soluble copolymer is a co...
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WO/2021/156531A1 |
A solid electrolyte for the dry electropolishing of metals, comprising at least one type of active ion exchange resin particles charged with an acid solution that generates chemical activity and electrical activity, at least one type of ...
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WO/2021/156530A1 |
A device for the electropolishing of metal surfaces by means of solid electrolytes, comprising: a container (6), an element (1) capable of accommodating at least two metal items; that is, containing the items (2), preventing the egress t...
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WO/2021/155324A1 |
A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxid...
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WO/2021/148930A1 |
A waxing composition configured to be used in combination with an aqueous washing composition, and methods of concurrently washing and waxing a surface using the waxing composition and the aqueous washing composition in combination. The ...
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WO/2021/141741A1 |
A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed i...
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WO/2021/135808A1 |
Provided are a polishing solution used for a carbon-containing material and a use method thereof. The chemical-mechanical polishing solution contains an abrasive, an oxidant, and organic phosphonic acid. According to the polishing soluti...
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WO/2021/135807A1 |
A chemical mechanical polishing liquid, comprising: a composite abrasive particle, an oxidant and water, wherein the composite abrasive particle is a composite oxide particle coated with two or more metal oxides selected from cerium oxid...
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WO/2021/135806A1 |
Disclosed is a chemical-mechanical polishing liquid, comprising abrasive particles, a metal corrosion inhibitor, a complexing agent, an oxidizing agent, and a polyoxyethylene-polyoxypropylene block copolymer surfactant. The chemical-mech...
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WO/2021/135805A1 |
Disclosed are a chemical-mechanical polishing liquid and the use thereof in copper polishing. The chemical-mechanical polishing liquid comprises a non-ionic surfactant, abrasive particles and an oxidizing agent, wherein the non-ionic sur...
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WO/2021/135803A1 |
A method for synthesizing basic cerium carbonate, comprising: respectively dissolving a cerium source and a precipitant in water to prepare a cerium source solution and a precipitant solution; mixing the cerium source solution and the pr...
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WO/2021/135568A1 |
Disclosed is a water-based magnetorheological polishing liquid and a preparation method therefor. The water-based magnetorheological polishing liquid comprises 77-88 wt% of magnetic particles, 0.01 wt‰-8 wt% of non-magnetic polishing p...
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WO/2021/131383A1 |
Provided is a polishing composition which can further reduce micro defects and haze of a semiconductor wafer after the polishing of the semiconductor wafer and has a satisfactory ability to hydrophilize a semiconductor wafer. The polishi...
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WO/2021/131434A1 |
A polishing composition that includes abrasive grains, a load suppressor, a water-soluble polymer, a basic compound, and water. The contact angle A of a 0.1 mass% aqueous solution of the load suppressor on the surface of a glass epoxy re...
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WO/2021/131198A1 |
A dispersant for chemical mechanical polishing use which can be used for the flattening of a surface of at least one of an insulating layer and a wiring layer is blended with a block copolymer (P) having a polymer block A and a polymer b...
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WO/2021/125919A1 |
The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing...
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WO/2021/121045A1 |
A chemical-mechanical polishing solution, comprising: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidant, water, and a pH adjuster. The chemical-mechanical polishing solution ...
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WO/2021/121047A1 |
Provided is a chemical-mechanical polishing liquid, comprising: abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing an adenine organic acid structure, an oxidizer, water and a pH regulator. The present inventio...
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WO/2021/121046A1 |
Provided is a chemical mechanical polishing solution, which comprises abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing both an amino sugar and a cyclic alcohol structure, an oxidant, water and a pH adjusting...
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WO/2021/121048A1 |
Provide is a chemical mechanical polishing solution, comprising cerium oxide, a polyacrylic acid, a polyvinylamine, and water. The use of a polyvinylamine as an additive can reduce the dishing amount of negatively charged cerium oxide on...
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WO/2021/121043A1 |
A chemical-mechanical polishing fluid, comprising water, ceric oxide, polyquaternium, a benzene ring-containing carboxylic acid, and polyvinylamine. Only when polyquaternium, the benzene ring-containing carboxylic acid, and polyvinulamin...
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WO/2021/121049A1 |
Disclosed is a chemical mechanical polishing liquid comprising water, cerium oxide, polyacrylic acid, and polyetheramine. The chemical mechanical polishing liquid uses polyetheramine as an additive capable of improving the polishing rate...
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WO/2021/121044A1 |
Provided is a chemical mechanical polishing solution. The chemical mechanical polishing solution contains water, cerium oxide abrasive particles and hydroxylamine. The chemical mechanical polishing solution can also improve the removal r...
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WO/2021/117689A1 |
This chemical-mechanical polishing composition is for polishing a base material and contains an abrasive, hydroxyethyl cellulose having a weight-average molecular weight of 200,000 or lower, a basic component, a surfactant, and an aqueou...
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WO/2021/118694A1 |
The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal ...
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WO/2021/117428A1 |
Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction ...
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WO/2021/111863A1 |
The present invention provides: a composition for chemical mechanical polishing, said composition increasing the polishing rate ratio of a silicon nitride film to a silicon oxide film, while reducing the occurrence of dishing in the sili...
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WO/2021/113285A1 |
High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria co...
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WO/2021/105174A1 |
The invention relates to cerium based particles having a rough surface and their use as a component of a polishing composition, especially for chemical mechanical polishing. The present invention also relates to the method of preparation...
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WO/2021/105991A1 |
A disaggregation method for NDs (nanodiamonds) comprising: sonicating NDs dispersed in water; and sedimenting non-disaggregated NDs by centrifugation. Optionally, the method includes sonicating the disaggregated NDs with CAN [(NH4)2Ce(NO...
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WO/2021/105169A1 |
The invention relates to cerium based core-shell particles having a core of cerium oxide optionally doped with at least one metal (M) and a shell consisting of a plurality of nanoparticles of cerium oxide optionally doped with at least o...
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WO/2021/096160A1 |
Polishing particles and the like of embodiments can have high polishing rate properties and suppress the formation of scratches, which may occur in a polishing process, when applied to a chemical mechanical polishing (CMP) process, by ad...
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WO/2021/095415A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and...
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WO/2021/095413A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method with which a semiconductor substrate containing a conductive metal such as tungsten or cobalt can be flatly polished at high speed and su...
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WO/2021/095412A1 |
Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and...
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WO/2021/092852A1 |
A method for treating a metal substrate to form a high gloss ceramic finish enclosure have been described. In an example, a method (100) for treating a metal substrate includes providing a metal substrate (102); polishing the metal subst...
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WO/2021/094641A1 |
The present invention relates to a method for polishing parts made of aluminum, and more specifically parts made of aluminum with a high content of silicon and produced by additive manufacturing.
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WO/2021/095414A1 |
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well ...
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WO/2021/084386A1 |
An abrasive solution for finishing a metal part is provided. The abrasive solution includes abrasive particles suspended in a solution. The abrasive particles are configured to abrade a surface of the metal part. The abrasive particles a...
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WO/2021/086015A1 |
Provided are a CMP slurry composition for polishing a tungsten pattern wafer, and a method for polishing a tungsten pattern wafer by using same, the CMP slurry composition comprising: a polar solvent and/or a nonpolar solvent; an abrasiv...
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WO/2021/081162A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.
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WO/2021/081153A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081145A1 |
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria particles, (b) a cationic polymer selected from a cationic homopolymer, a cationic copolymer comprising at least one cationic ...
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WO/2021/081171A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081176A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound ...
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WO/2021/081148A1 |
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier...
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WO/2021/081102A1 |
Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions 5 contain ceria coated inorganic oxide particles as abrasives, such as ceria-...
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