| Document |
Document Title |
|
WO/2022/145654A1 |
The present invention relates to a polishing composition for semiconductor processing, a method for manufacturing the polishing composition, and a method for manufacturing a semiconductor device to which the polishing composition is appl...
|
|
WO/2022/143719A1 |
The present invention aims to provide a polishing solution for a carbonaceous material and a use method therefor. The chemical-mechanical polishing solution contains an abrasive, an oxidant, a carboxylic acid compound, and water. The pol...
|
|
WO/2022/145653A1 |
The present invention relates to a polishing composition for semiconductor processing, a polishing composition preparation method, and a semiconductor device manufacturing method to which the polishing composition is applied. The polishi...
|
|
WO/2022/140334A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula ...
|
|
WO/2022/135608A1 |
A synthesis method for cerium oxide, comprising adding an aqueous cerium source solution to a precipitant solution to generate a raw material solution; introducing nitrogen gas into the raw material solution, and stirring the raw materia...
|
|
WO/2022/137897A1 |
The present invention provides a polishing composition which is capable of reducing micro defects of a semiconductor wafer after polishing. This polishing composition contains abrasive grains, a basic compound, a wetting agent and a noni...
|
|
WO/2022/140075A1 |
A polishing composition includes at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least a phosphate, at least one phosphonic acid compound having a molecular weight below 500 g/mol, at least...
|
|
WO/2022/130839A1 |
The present invention provides a means for decreasing a surface roughness (Ra) while keeping a high polishing speed in the polishing of an object comprising a resin and a filler. A polishing composition according to the present invention...
|
|
WO/2022/133396A1 |
Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low Cu static etching rates for polishing the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP comp...
|
|
WO/2022/121820A1 |
The present invention provides a chemical-mechanical polishing liquid and a use method thereof. The polishing liquid contains cerium oxide abrasive particles and 2-methylamine ethanol. The polishing liquid of the present invention can ef...
|
|
WO/2022/124559A1 |
The present invention relates to a polishing composition for semiconductor processing, a method for preparing the polishing composition, and a method for manufacturing a semiconductor element to which the polishing composition is applied...
|
|
WO/2022/121821A1 |
Provided are a chemical mechanical polishing solution and a use method therefor. The chemical mechanical polishing solution contains cerium oxide abrasive particles, hydroxylamine and a derivative thereof, and a pH regulator, wherein the...
|
|
WO/2022/121822A1 |
The present invention provides a chemical-mechanical polishing solution and a method for using same. The chemical-mechanical polishing solution comprises a cerium oxide abrasive particle, a hydroxylamine derivative, and a pH regulator. T...
|
|
WO/2022/121816A1 |
Provided are a chemical mechanical polishing solution and a use method therefor. The chemical mechanical polishing solution contains cerium oxide abrasive particles, kojic acid and a pH regulator. The chemical mechanical polishing soluti...
|
|
WO/2022/116859A1 |
The present invention relates to a method for separating and extracting rare earth and regenerated rare earth polishing powder from waste rare earth polishing powder. The method is characterized by comprising: first using a primary acid ...
|
|
WO/2022/117637A1 |
The present invention relates to a method of reducing the friction of a sliding surface of a device or article with respect to a contact surface composed of snow, ice or water, or a mixture thereof, wherein a lubricant containing at leas...
|
|
WO/2022/113775A1 |
A polishing liquid composition for silicon oxide films which is capable of having improved polishing selectivity in polishing silicon oxide films is provided in one aspect. This polishing liquid composition for silicon oxide films comp...
|
|
WO/2022/099285A1 |
An abrasive article can include a body including a bond material, abrasive particles contained in the bond material, and an impact modifier. In an embodiment, the impact modifier can be in a content of at least 1 vol% of and at most 10 v...
|
|
WO/2022/089524A1 |
The present disclosure relates to the technical field of semiconductor chemical mechanical polishing, and specifically discloses a silica sol having protruded colloidal particle surfaces, a preparation method therefor and use thereof. Th...
|
|
WO/2022/093688A1 |
This disclosure relates polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine ...
|
|
WO/2022/089624A1 |
Embodiments of the present application provide a composite catalyst for chemical mechanical planarization, the composite catalyst comprising a carrier, catalyst nanoparticles supported on the carrier, and a porous protective layer wrappi...
|
|
WO/2022/075179A1 |
One embodiment of the present invention provides a polishing liquid composition for silicon oxide films, said polishing liquid composition being capable of achieving a good balance between improvement of the polishing rate of a silicon o...
|
|
WO/2022/075413A1 |
One embodiment of the present invention provides a polishing liquid composition which is capable of reducing scratches and waves in a substrate surface after polishing, while ensuring an adequate polishing rate. One embodiment of the p...
|
|
WO/2022/071120A1 |
The purpose of the present invention is to provide a cerium oxide and a polishing agent with which a silicon nitride film can be polished at a high speed. Provided is cerium oxide that satisfies one or more of (A) to (D) when the CO2 des...
|
|
WO/2022/063742A1 |
The present invention relates to surface-modified silica particles comprising an alkoxy organosilane and to compositions comprising such particles as well as to uses of such surface-modified silica particles and compositions comprising s...
|
|
WO/2022/065022A1 |
Provided is a polishing composition capable of reducing post-polishing haze on the surface of a substrate. This polishing composition contains abrasive grains, a basic compound, water, and a compound represented by formula (I). R1, R2, R...
|
|
WO/2022/060735A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential...
|
|
WO/2022/056067A1 |
The disclosure relates to brush compositions for magnetic field-assisted finishing (MAF). In particular, the disclosure relates to brush compositions for MAF including a carrier fluid, optionally a solid lubricant dispersed in the carrie...
|
|
WO/2022/050242A1 |
Provided are a cerium oxide that is capable of high-speed polishing of a silicon nitride film, and a polishing agent that includes said cerium oxide. In this cerium oxide, the BET diameter is 15nm to 100nm, said BET diameter being the pa...
|
|
WO/2022/045115A1 |
The present disclosure provides a composition containing: (A) 1,1,1,3,3,3-hexafluoro isopropyl methyl ether (HFE-356mmz) and/or 1,1,2,3,3,3-hexafluoro propyl methyl ether (HFE-356mec); and (B) a fluorine oil.
|
|
WO/2022/046899A1 |
The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and...
|
|
WO/2022/046893A1 |
This disclosure relates to a polishing composition that includes at least one abrasive; at least one pH adjuster, and at least one biosurfactant, as well as a method of using the polishing composition to polish a substrate. The biosurfac...
|
|
WO/2022/045866A1 |
The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process f...
|
|
WO/2022/031601A1 |
A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the tit...
|
|
WO/2022/031490A1 |
A vehicle surface treatment composition includes a colloidal inorganic oxide dispersion or a soluble silicate amenable to application to both porous and semi-porous vehicle hard surfaces to provide a multi-surface protective barrier that...
|
|
WO/2022/022147A1 |
Disclosed is use of a GLSI polylaminate wiring high-valence metal in CMP, which provides a new technique for improving stability in chemical mechanical polishing and planarization. A compound of the polylaminate wiring high-valence metal...
|
|
WO/2022/024726A1 |
The present invention provides a polishing agent composition which expedites a mirror polishing process by means of the polishing rate or the like and improves smoothness and flatness of the wafer surface of a semiconductor wafer after t...
|
|
WO/2022/026369A1 |
A novel pad-in-a-bottle (PIB) technology for advanced chemical-mechanical planarization (CMP) Copper or THROUGH-SILICON VIA (TSV) CMP compositions, systems and processes has been disclosed. The role of conventional polishing pad asperiti...
|
|
WO/2022/026355A1 |
A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected ...
|
|
WO/2022/020236A1 |
A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight perc...
|
|
WO/2022/009990A1 |
The present invention provides a polishing composition which is capable of polishing the surface of a polycrystalline ceramic smooth. This polishing composition contains abrasive grains and water; and the average secondary particle diame...
|
|
WO/2022/010257A1 |
The present invention relates to a cerium oxide composite powder and a dispersion composition comprising same. The cerium oxide composite powder comprises two or more kinds of cerium oxide particles having different particle sizes from e...
|
|
WO/2021/251108A1 |
Provided are a composition for chemical mechanical polishing and a method for polishing that, while allowing a semiconductor substrate that contains a polysilicon film and/or a silicon nitride film to be polished at a high speed, makes i...
|
|
WO/2021/242755A1 |
Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles...
|
|
WO/2021/241505A1 |
Provided is a polishing method which makes it possible to efficiently provide a surface that is prevented from the occurrence of subsurface damages with high accuracy in a high-hardness material. A polishing method provided by the presen...
|
|
WO/2021/235054A1 |
The present invention is an abrasive for synthetic quartz glass substrates that includes at least abrasive particles and water, wherein the abrasive particles include composite oxide particles of cerium and yttrium and composite amorphou...
|
|
WO/2021/231090A1 |
A novel pad-in-a-bottle (RIB) technology for advanced chemical-mechanical planarization (CMP) slurries, systems and processes has been disclosed. The role of conventional polishing pad asperities is played by high-quality micron-size pol...
|
|
WO/2021/220672A1 |
The present invention provides: a cerium-based polishing slurry raw material solution which exhibits good polishing performance on glass materials, while having excellent productivity; a method for producing this cerium-based polishing s...
|
|
WO/2021/216514A1 |
Described herein are compositions and methods for use in automotive care. In particular, the present disclosure is directed to compositions that provide an improved cure time and durability and methods of use thereof.
|
|
WO/2021/216534A1 |
Described herein are compositions and methods for use in automotive care. In particular, the present disclosure is directed to water-based compositions comprising silicone combinations that deliver cleaning, protective, preservative and ...
|
