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WO/2016/107414A1 |
The present invention aims to provide an application of a composition in polishing of a barrier layer. The composition is added into a chemical mechanical polishing (CMP) liquid, the CMP liquid comprises silica sol, and the composition i...
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WO/2016/106765A1 |
A method for preparing cerium oxide crystals, comprising: adding an alkaline precipitant to a cerium source aqueous solution to which an organic additive has been added, so as to obtain cerium hydroxide by precipitating; adding carbon di...
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WO/2016/107409A1 |
The polishing liquid of the present invention provides for polishing of silicon dioxide at very high speed. By means of the synergistic effect of a silicon-containing organic compound and an amphoteric surfactant, high grinding speeds ar...
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WO/2016/109780A1 |
Embodiments of the present disclosure are directed to methods of making high grade colored abrasive articles that are color stable at high temperatures, such as color stable at temperatures of at least about 185 degrees Celsius such that...
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WO/2016/107413A1 |
The present invention aims to providing a solution for poor stability of a polishing liquid prepared by amino silane modified grinding particles. The stability of the pH, nanometer particle size, and polishing speed of such a system in a...
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WO/2016/103576A1 |
Provided is a polishing composition that is inexpensive and can be used to impart a high-quality mirror finish to ceramic. The polishing composition contains abrasive grains made of carbide, and is used for polishing ceramic.
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WO/2016/102531A1 |
Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles, (B) a ...
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WO/2016/101332A1 |
The present invention presents a chemical mechanical polishing (CMP) slurry, and the CMP slurry uses ceria as an abrasive and contains an organic polybasic acid and polymers. The CMP slurry disclosed in the present invention still has a ...
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WO/2016/105474A1 |
A method of forming a shaped abrasive particle including forming a mixture comprising a ceramic material into a sheet and sectioning at least a portion of the sheet using a mechanical object and forming at least one shaped abrasive parti...
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WO/2016/102204A1 |
Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a t...
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WO/2016/102279A1 |
Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a su...
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WO/2016/097915A1 |
A chemical mechanical polishing (CMP) composition (Q) comprising: (A) inorganic particles, (B) a compound of general formula (I) (C) an aqueous medium wherein the composition (Q) has a pH of from 2 to 6.
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WO/2016/089660A1 |
Provided herein are abrasive compositions that use surfactants containing block copolymers of both propylene oxide and ethylene oxide moieties. Abrasive compositions derived from these copolymers were capable of providing both superior l...
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WO/2016/081433A1 |
The present disclosure provides a composition for treating leather and similar materials. The composition comprises from about 40% (w/w) to about 60% (w/w) of an oil obtained from natural sources; from about 1% (w/w) to about 15% (w/w) o...
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WO/2016/075880A1 |
Provided is a polishing composition capable of polishing a subject to be polished which has a crystalline metal compound in the surface thereof, with higher polishing efficiency. The polishing composition, used for the purpose of polishi...
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WO/2016/072864A1 |
The invention relates to an abrasive composition for abrading the surface of materials such as metals and plastics to provide a polished finish. In particular the abrasive composition includes aluminium dross (a by-product of aluminium s...
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WO/2016/072370A1 |
Provided is a method for polishing a material that has a Vickers hardness of 1,500 Hv or more. This polishing method comprises: a step for performing preliminary polishing with use of a composition for preliminary polishing, which contai...
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WO/2016/063505A1 |
Provided is a polishing composition with which a satisfactory polishing rate can be stably maintained. The polishing composition comprises silica particles as abrasive grains and a basic compound as a polishing accelerator. The silica pa...
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WO/2016/059142A1 |
The invention relates to a method for discharging solid pastes for surface working onto a working tool (16), comprising the steps of providing a solid paste (46) for the surface working, which contains abrasives, in particular a solid pa...
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WO/2016/060113A1 |
This polishing liquid composition for a sapphire plate contains: silica particles; at least one type of inorganic phosphate compound selected from the group consisting of orthophosphate, phosphite, and hypophosphite; and a water-based so...
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WO/2016/056165A1 |
The present invention is a CMP polishing agent that contains polishing particles, a protective agent, and water, wherein CMP polishing agent is characterized in that the protective agent is a silsesquioxane polymer having a polar group. ...
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WO/2016/053595A1 |
Water-based compositions; such as coating compositions, particularly paints; comprising at least one low VOC phosphate-based coalescent and a latex or a water-dispersible polymer. A method for preparing a water-based composition comprise...
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WO/2016/052408A1 |
The present invention provides a polishing composition: that is suitable for polishing objects to be polished having a layer that includes a high-mobility material having a carrier mobility higher than Si; inhibits excessive dissolution ...
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WO/2016/050427A1 |
The invention relates to a method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong...
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WO/2016/051636A1 |
Provided is a polishing composition whereby a polishing object such as simple silicon, a silicon compound, or a metal, particularly a polishing object including tungsten, can be polished at a high polishing speed. The polishing compositi...
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WO/2016/051659A1 |
For the polishing of polysilicon-containing substrates, provided are a polishing composition and a polishing method capable of suppressing the rate of polishing polysilicon and selectively polishing silicon compounds other than polysilic...
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WO/2016/052281A1 |
The present invention provides a polishing composition capable of adequately limiting dishing phenomena in polishing steps and of more reliably eliminating level differences. The present invention is a polishing composition: which contai...
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WO/2016/047725A1 |
Provided is a polishing liquid composition for a silicon oxide film with which it is possible to improve the polishing rate. In one or a plurality of embodiments, a polishing liquid composition for a silicon oxide film is provided, the p...
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WO/2016/042323A1 |
A ski (10) including a base layer (12) made from permeable material, wherein the base layer (12) is treated with a composition comprising at least one chemical component to confer hydrophobicity with a water contact angle of greater than...
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WO/2016/042744A1 |
Provided are: a polishing material which is capable of removing rolling of the outer surface of a resin coating film by polishing and is not susceptible to the formation of polishing scratches; a composition for polishing; and a polishin...
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WO/2016/038995A1 |
The present invention provides a polishing composition which can achieve a high polishing rate against a copper-containing layer and can simultaneously prevent the dissolution of a cobalt-containing layer during the polishing of an objec...
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WO/2016/038771A1 |
A polishing composition comprising metal oxide particles as abrasive grains, wherein the metal oxide particles include those in which the half-value width of the peak portion at which the diffraction intensity in a powder X‐ray diffrac...
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WO/2016/035346A1 |
Provided is a slurry composition, a rinse composition, a substrate polishing method and a rinsing method for chemical mechanical polishing. The slurry composition of the present invention is a slurry composition for chemical mechanical p...
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WO/2016/035250A1 |
The purpose of the present invention is to provide a method for manufacturing a polishing composition for which dispersion stability as an undiluted solution is good and which even when diluted, for example, at a high ratio, is able to a...
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WO/2016/031485A1 |
The present invention provides a polishing composition with which it is possible to adequately control the polishing rate with respect to a material having a low relative dielectric constant. The present invention is a polishing composit...
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WO/2016/032820A1 |
A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particle...
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WO/2016/024624A1 |
Taking into consideration the situation that conventional α-alumina particles for polishing have not been sufficient in terms of polishing speed and with regards to mirror surface processing, provided is an α-alumina for polishing that...
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WO/2016/021254A1 |
[Problem] To provide a composition for polishing a titanium alloy material with which it is possible to polish a titanium alloy material at a high polishing rate and obtain a polished titanium alloy material having excellent surface smoo...
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WO/2016/021708A1 |
A polishing agent for tungsten, the polishing agent containing abrasive grains, hydrogen peroxide, a silicomolybdic acid compound, and a water-soluble polymer.
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WO/2016/022490A2 |
A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity > 30%, (ii) a co...
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WO/2016/020130A1 |
Disclosed is a composition comprising particle having average diameter of no greater than 3 microns; non-volatile silicone; and at least 30% of water by weight of the composition, wherein the weight ratio of the particle to the non-volat...
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WO/2016/017819A1 |
Provided are a method for producing a polishing slurry, polishing abrasive grains, and a polishing slurry with which polishing rate can be improved and the occurrence of damage to a glass substrate can be suppressed. Further provided is ...
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WO/2016/017063A1 |
The present invention is a method for polishing a germanium wafer having a surface made of germanium, in which a hydrogen peroxide solution is added to a first polishing slurry, which is an alkaline aqueous solution containing colloidal ...
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WO/2016/019211A1 |
A polishing solution includes a fluid component and a plurality of conditioning particles. The fluid component includes water, a basic pH adjusting agent, and a polymeric thickening agent. The polymeric thickening agent is present in the...
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WO/2016/008896A1 |
A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP compositio...
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WO/2015/194936A1 |
The invention discloses a wax composition for use, for example, in batik manufacturing and wax painting comprising a palm oil-based wax mixture in an amount of 70% to 95%; a non-palm oil-based wax in an amount of 1% to 30%; and a resin i...
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WO/2015/176984A1 |
The present invention provides blends containing i) a compound of formula (A) or a mixture of compounds of formula (A), wherein Ra is C6-30-alkyl, La is C2-6-alkylene, and n is an integer from 1 to 10, and ii) a compound formula (B) or a...
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WO/2015/178476A1 |
This polishing solution for metal films includes: a methacrylic-acid-based polymer having a weight average molecular weight of at least 20,000; polishing particles; and an aqueous solvent.
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WO/2015/170743A1 |
This polishing solution composition for a sapphire plate contains alumina particles, an anionic polymer, and an aqueous medium. One example of a manufacturing method for a sapphire plate according to the present invention includes a step...
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WO/2015/159506A1 |
This invention provides a composition for polishing silicon wafers. Said composition, which excels at reducing haze on the surface of silicon wafers, contains abrasive grains, a silicon-wafer polishing accelerator, an amide-group-contain...
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