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WO/2012/135342A1 |
A method of chemically-mechanically polishing a substrate having a Group Ill-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carr...
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WO/2012/126217A1 |
Chemical mechanical polishing liquids for phase-change memories are provided, which contain polishing particles, oxidants, chelating agents, inhibitors, surfactants, pH adjusters/buffering agents and aqueous medium. Said polishing liquid...
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WO/2012/127398A1 |
A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) whi...
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WO/2012/127399A1 |
A chemical-mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one ...
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WO/2012/088754A1 |
Disclosed is a chemical mechanical planarization slurry for polishing silicon and copper, comprising abrasive particles, an oxidant, an alkaline polishing rate adjusting agent capable of reacting with the surface of silicon and copper to...
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WO/2012/088755A1 |
Disclosed is a chemical mechanical planarization slurry containing organic acid for silicon and copper, comprises abrasive particles, an oxidant, an organic acid-type polishing rate regulating agent, and may further comprise a pH regulat...
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WO/2012/088756A1 |
Disclosed in the present invention is chemical mechanical polishing slurry, comprising water, gas phase silicon dioxide, silver ions, sulphate ions and a peroxide. The polishing slurry has a very high speed for polishing tungsten, and at...
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WO/2012/087813A2 |
The invention provides an improved appearance, glossy, autodepositing coating composition that maintains its desirable properties such as moisture barrier properties, although it is still able to deliver a glossy finish. No additional co...
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WO/2012/077001A2 |
An oil-in-water emulsion that is environmentally friendly and also exhibits antimicrobial activity is provided. More specifically, the oil phase of the emulsion includes a botanical oil derived from a plant (e.g., thymol, carvacrol, etc....
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WO/2012/075687A1 |
A chemical mechanical polishing slurry for use in copper, comprising at least a phosphate ester surfactant as well as grinding particles, a complexing agent and an oxidizing agent. Using the slurry in the present invention can decrease t...
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WO/2012/077063A1 |
An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I:...
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WO/2012/071780A1 |
A chemical mechanical polishing slurry for copper is providedin this invention, wherein 5-phenyl tetrazole is added in the baseof abrasive particles, a complexing agent and an oxidant. By using the chemical mechanical polishing slurry in...
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WO/2012/073452A1 |
The invention relates to an aqueous floor polishing composition that comprises a polyoxyalkylene diester compound represented by formula (1) and does not comprise an elemental phosphorus-containing plasticizer. R1 and R2 in formula (1) e...
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WO/2012/068775A1 |
Disclosed is a chemical mechanical polishing slurry, comprising water, an abrasive, silver ions, sulfate ions, a peroxide, and a surfactant. The polishing slurry has a very high tungsten polishing rate, and significantly eliminates surfa...
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WO/2012/055153A1 |
A chemical mechanical polishing method of tungsten is disclosed, comprising the following steps: (a) blending a chemical mechanical polishing slurry precursor and an active reducing agent to prepare a chemical mechanical polishing slurry...
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WO/2012/051786A1 |
Disclosed is a chemical-mechanical polishing slurry for planarizing a barrier layer, at least comprising abrasive particles, a metal chelating agent, combined metal corrosion inhibitors, an organic solvent, and an oxidant. The polishing ...
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WO/2012/051787A1 |
Disclosed is a chemical mechanical polishing liquid for the planarization of a blocking layer, which comprises at least one kind of abrasive particle, a metal chelating agent, a silicon dioxide polishing promoter, a composite metal antic...
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WO/2012/048517A1 |
Disclosed is a chemical-mechanical planarization slurry for polishing poly-crystalline silicon and copper at high speeds, comprising abrasive particles, an oxidant, an agent for increasing polishing rate and a carrier. The disclosed chem...
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WO/2012/046179A1 |
An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected fr...
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WO/2012/046183A1 |
A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A)inorganic particles, organic particles, or a mixture thereof, (B)a heteropolyacid or a salt thereof, (C)a s...
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WO/2012/044502A1 |
Described are sacrificial floor coating compositions, comprising polyurethane dispersions having a slope of the stress modulus versus temperature curve from about -0.50x106 to about -3.00x106 dynes per (cm2)(ºC).
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WO/2012/042040A1 |
The present invention provides process for the manufacture of an aqueous resin composition comprising a phenolic formaldehyde (PF) resin, which process comprises the steps of:providing a formaldehyde and phenolic compound, reacting said ...
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WO/2012/032461A1 |
An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophore...
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WO/2012/032469A1 |
An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble a...
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WO/2012/032466A1 |
An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one ty...
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WO/2012/031452A1 |
Disclosed is a chemical mechanical polishing solution, comprising: abrasive particles, an oxidant comprising halogen, organic amine, ethylene diamine tetraacetic acid (EDTA), and a pH regulator. The chemical mechanical polishing solution...
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WO/2012/032451A1 |
An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and h...
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WO/2012/019425A1 |
Disclosed is a chemo-mechanical polishing liquid comprising water, an abrasive filler, a compound capable of etching tungsten, a tungsten-etching inhibitor, and a regulator for a substrate profile, wherein the tungsten-etching inhibitor ...
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WO/2012/016424A1 |
Disclosed is a chemical mechanical polishing solution, comprising water, an abrasive, a compound capable of etching tungsten, and at least a tungsten etching inhibitor. The tungsten etching inhibitor is selected from amides containing a ...
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WO/2012/009938A1 |
An anti-oxidation method for multilayer wiring of an ultra large scale integrated circuit after alkaline polishing is provided. The method includes the following steps: (1) preparing an anti-oxidation liquid; (2) water polishing by the p...
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WO/2012/009967A1 |
The present invention relates to a chemical mechanical polishing (CMP) slurry, comprising abrasive particles, an oxidizer, an amino acid, quaternary ammonium hydroxide, and water. The slurry has a basic pH. The slurry enables very high s...
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WO/2012/009937A1 |
A low-pressure chemical-mechanical polishing (CMP) method for the surface of the copper wiring in ultra-large scale integrated circuit is disclosed. The operational steps are as follows: (1) preparing polishing solution by uniformly mixi...
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WO/2012/009959A1 |
Disclosed is a chemical mechanical polishing (CMP) slurry, comprising an activator, a strong oxidizer precursor, an abrasive, and water. The chemical mechanical polishing of the present invention enables a significant increase in the spe...
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WO/2012/003628A1 |
A composition comprising at least one nutrient element, wherein the at least one nutrient element possesses a relative energy-state value greater than the relative energy-state value of the at least one nutrient element in a preexisting ...
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WO/2011/104640A1 |
An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1 ) capable of ...
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WO/2011/101755A1 |
A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one ...
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WO/2011/097954A1 |
A method of chemical mechanical polishing tungsten is disclosed in which a polishing solution includes an exciting agent and a strong oxidizing agent precursor. The polishing solution further includes an abrasive material, water, a pH mo...
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WO/2011/088186A1 |
The invention is directed to a composition for simultaneously washing and waxing an automotive exterior surface. More particularly, this invention relates to a wash and wax composition that imparts a detergent-resistant wax to the vehicl...
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WO/2011/083475A1 |
Disclosed are copper CMP compositions containing a high concentration of sorbate anion. Further disclosed are processes of planarizing a copper-containing surface using the compositions, as well as substrates and articles having planariz...
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WO/2011/079512A1 |
A chemical-mechanical polishing liquid is disclosed. The polishing liquid comprises a composite abrasive, and a pH adjustor. By increasing the pH value of the polishing liquid and applying the composite abrasive in the polishing liquid, ...
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WO/2011/072491A1 |
A chemical-mechanical polishing liquid for polishing silicon is disclosed. The polishing liquid comprises water, abrasive particles, as least one accelerant for silicon, and at least one inhibitor for silicon. By adjusting the contents o...
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WO/2011/072493A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, a polymer, water, as well as a stabilizer for improving the stability of the polishing slurry. In the polishing liquid，the growth ra...
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WO/2011/072490A1 |
A chemical-mechanical polishing liquid is disclosed, which comprises abrasive particles, an oxidant, a polyhydric compound, an organic base and water. The chemical-mechanical polishing liquid can considerably improve the removal rate of ...
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WO/2011/072495A1 |
A chemical-mechanical polishing liquid for silicon-polishing is provided. The polishing liquid comprises water, abrasive particles, at least one accelerator for silicon and at least one inhibitor for silicon. By adjusting the contents of...
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WO/2011/072492A1 |
A chemical mechanical polishing liquid for metal can be formed by combining the following substances: abrasive particles, a complexing agent and a corrosion inhibitor. By using the polishing liquid, the removal rate of metal is reduced a...
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WO/2011/072494A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, corrosion inhibitors, oxidants, water and at least two complexing agents. The chemical-mechanical polishing liquid of the present inve...
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WO/2011/069345A1 |
A chemical-mechanical polishing slurry and the use thereof are provided. The polishing slurry is used for chemical-mechanical polishing of copper. The polishing slurry comprises a star polymer surfactant containing pigment-affinity group...
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WO/2011/069344A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid contains water, an abrasive, an oxidant and a water-soluble cationic surfactant. The present polishing liquid can reduce and eliminate the noises from polishing, im...
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WO/2011/069343A1 |
A chemical-mechanical polishing liquid for polishing tantalum barrier is disclosed. The polishing liquid comprises abrasive particles, an organic acid, polyacrylics, a metal corrosion inhibitor, a quaternary ammonium base, an oxidant and...
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WO/2011/064734A1 |
A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary mat...
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