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WO/2021/205906A1 |
[Problem] With conventional mask-information adjusting devices, there has been a problem in that the data size of mask information with which it is possible to obtain a high-precision exposure pattern is large. [Solution] A mask-informat...
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WO/2021/203966A1 |
An optical proximity effect correction method and apparatus. The optical proximity effect correction method comprises: acquiring an original target pattern, and pre-processing the original target pattern to form a secondary target patter...
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WO/2021/204024A1 |
Disclosed are a mask plate and a method for testing the quality of the mask plate. The mask plate comprises a mask exposure area (12) and a non-mask exposure area (11), wherein the mask exposure area (12) is provided with a mask pattern ...
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WO/2021/203550A1 |
Disclosed is an optical proximity correction method for a curve pattern. After the optical proximity correction is performed on an imported original design pattern and before design rule checking, the curve pattern is subjected to orthog...
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WO/2021/204541A1 |
A pre-classification of potential mask defects on the basis of machine learning is provided during the inspection of a mask for EUV lithography.
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WO/2021/197266A1 |
An optical proximity correction method and apparatus. The optical proximity correction method comprises: manufacturing a test mask plate; using the test mask plate to acquire wafer data under the current photoetching condition; using the...
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WO/2021/199528A1 |
An inspection device comprising: a bombardment source that bombards a pattern of an inspection specimen with an electron beam, said inspection specimen having a first surface, and a second surface on which the pattern is formed; a first ...
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WO/2021/200325A1 |
The present invention provides a multilayer reflective film-equipped substrate, a reflective mask blank, a reflective mask, and a method for producing a semiconductor device, the multilayer reflective film-equipped substrate having high ...
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WO/2021/195194A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed, The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on t...
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WO/2021/190396A1 |
Provided is a mask (1000), comprising a first boundary area (21) and a plurality of exposure pattern areas (10), wherein the first boundary area (21) comprises a region surrounding the plurality of exposure pattern areas (10); and the fi...
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WO/2021/193681A1 |
The purpose of the present disclosure is to provide a pellicle that has an adhesive layer having good flatness, and a method for producing the pellicle with good reproducibility. Said purpose is achieved by a pellicle having: a pellicle ...
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WO/2021/189776A1 |
The present application provides a mask, a display panel, and an electronic device. The mask moves an opening graphic pattern to sides of repeat regions. On the basis of the structure, masks having the same size can be used in display pa...
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WO/2021/192734A1 |
The present invention provides a mask blank which is capable of suppressing decrease in the etching rate of a hard mask film as a whole, while enhancing the pattern resolution, CD in-plane uniformity and CD linearity. A mask blank whic...
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WO/2021/190123A1 |
Provided are a mask (20), a display panel, and a method for preparing the mask (20). The mask (20) comprises a fully light-transmitting area (210), a semi-light-transmitting area (220) and a non-light-transmitting area (230), wherein the...
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WO/2021/190780A1 |
The invention relates to a device (20) for detecting a temperature on a surface (15) of an optical element (14) for semiconductor lithography, having - an optical element (14) with a face (16) irradiated with electromagnetic radiation (7...
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WO/2021/193089A1 |
Provided is a multilayer-reflective-film-equipped substrate with which it is possible to adequately lower the reflectance of the multilayer film with respect to EUV exposure light and with which it is possible to prevent the occurrence o...
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WO/2021/194032A1 |
Proposed are a graphene-metal composite pellicle containing graphene having thermal load stability, high EUV transmittance, excellent chemical durability, and mechanical properties, and a method for manufacturing same. A method for manuf...
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WO/2021/187517A1 |
Provided is a photomask blank comprising a transparent substrate, and a light-blocking film disposed on one surface of the transparent substrate and including a chromium-based material, wherein the sheet resistance of the light-blocking ...
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WO/2021/187189A1 |
A purpose of the present invention is to provide a mask blank wherein the boundary between a region where a thin film is formed and a region where the thin film is not formed is easily visually recognized, and the position of a masking p...
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WO/2021/182042A1 |
The present invention provides a reflective mask blank which enables the achievement of a phase shift film that has satisfactory optical characteristics, while being more decreased in crystallinity (i. e., being more microcrystallized or...
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WO/2021/180042A1 |
Disclosed are an optical proximity effect correction method and apparatus, a device, and a medium. The optical proximity effect correction method comprises: according to a design rule for a target graph, making a test graph mask (S110); ...
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WO/2021/175570A1 |
A method for training a machine learning model to generate a characteristic pattern includes obtaining training data associated with a reference feature in a reference image. The training data includes (i) location data of each portion o...
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WO/2021/175245A1 |
A parameter analysis method and device of a mask plate. The method comprises: obtaining detection parameters of at least one mask pattern, the detection parameters comprising deviation coordinates between measured coordinates of each ali...
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WO/2021/172449A1 |
This method for manufacturing a glass substrate includes the following (A)-(D). (A) A glass substrate, which is formed from Ti-doped quartz glass, is housed in a processing container. (B) A drying gas is supplied to the inside of the pro...
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WO/2021/169561A1 |
An array substrate of the present invention, comprising: a substrate and a first conductive layer and a second conductive layer which are sequentially stacked on the substrate, wherein an orthographic projection of the first conductive l...
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WO/2021/170555A1 |
The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithog...
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WO/2021/172104A1 |
Provided are a pellicle film, a pellicle, an original plate for exposure, an exposure device, a method for producing a semiconductor device, and a method for producing a pellicle, the pellicle film containing carbon nanotubes having a si...
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WO/2021/172354A1 |
Provided is a technology which enables the achievement of a pellicle film that is not susceptible to breakage in cases where a force is applied thereto in the thickness direction, while being capable of having light transmit therethrough...
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WO/2021/164354A1 |
A mask pattern applied to a semiconductor photolithography process and the semiconductor photolithography process. The mask pattern comprises a pattern (20), the pattern (20) comprises light-transmitting regions (200) and light-shielding...
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WO/2021/167005A1 |
The objective of the present invention is to generate, in a shorter time, mask data for a pixel-based mask with which it is possible to obtain a projection image similar to that obtained when a mask based on polygon mask data is used. ...
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WO/2021/164608A1 |
A mask applied to a semiconductor photolithography technique, and a photolithography technique method. A mask (20) comprises at least one graphic group (210); each graphic group (210) comprises at least one light-transmitting region (210...
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WO/2021/161792A1 |
The purpose of the present invention is to provide a reflective mask blank which is not only for manufacturing a reflective mask having a reduced shadowing effect, but also provided with an absorber film having an improved chemical resis...
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WO/2021/160522A1 |
Described herein are a method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on ...
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WO/2021/163623A1 |
A method including the following steps: a layout used in a lithographic mask development process is accessed, for example, the layout may be the layout of the mask itself, or it may be the layout of the resulting printed pattern on the w...
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WO/2021/157539A1 |
The present invention provides a frame-shaped pellicle frame having an upper end surface on which a pellicle film is provided and a lower end surface facing a photomask, characterized in that the inner surface of the pellicle frame has a...
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WO/2021/156380A1 |
The present invention relates to a device (700) for repairing at least one defect (150, 350, 550, 1450) of an optical component (100, 300, 500) for the extreme ultraviolet (EUV) wavelength radiation, the optical component (100, 300, 500)...
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WO/2021/156070A1 |
A pattering device inspection apparatus, system and method are described. According to one aspect, an inspection method is disclosed, the method including receiving, at a multi-element detector within an inspection system, radiation scat...
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WO/2021/154714A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2021/154715A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2021/154716A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2021/148980A1 |
In the case of reproducing across a wafer (20) surface a first set of repetitions of an integrated circuit (10), the integrated circuit comprising structures extending in the thickness-direction of the wafer and comprising a first region...
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WO/2021/149615A1 |
The present invention provides a pellicle frame, a pellicle, an exposure original plate with the pellicle, an exposure method, and a semiconductor or liquid-crystal-display manufacturing method, the pellicle frame constituting a pellicle...
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WO/2021/150316A1 |
Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned...
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WO/2021/150556A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2021/149602A1 |
Provided are a pellicle frame, a pellicle, a method for inspecting a pellicle, a pellicle-attached exposure original plate and exposure method, and a method for manufacturing a semiconductor or a liquid crystal display board, wherein a f...
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WO/2021/148550A1 |
An inspection system includes a radiation source that generates a beam of radiation and irradiates a first surface of an object, defining a region of the first surface of the object. The radiation source also irradiates a second surface ...
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WO/2021/144097A1 |
A pellicle membrane for a lithographic apparatus, said membrane comprising a matrix including a plurality of inclusions distributed therein is provided. Also provided is a method of manufacturing said pellicle membrane, a lithographic ap...
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WO/2021/146332A1 |
A method of making a portion of a microfluidic channel includes lithographically patterning a first pattern (100) into a first layer of photoresist (112) disposed on a substrate (110), the first pattern representative of morphology of a ...
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WO/2021/146554A1 |
Lithography fabrication methods for producing polymeric microneedles, microprobes, and other micron-sized structures with sharp tips. The fabrication process utilizes a single-step bottom-up exposure of photosensitive resin through a pho...
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WO/2021/139043A1 |
The present invention provides an array substrate and a manufacturing method therefor. According to the manufacturing method for the array substrate, a multi-stage mask is used for exposure and development, so that the thickness of the r...
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