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WO/2022/235064A1 |
The present invention provides a metal structure manufactured using an anodic oxide film and a method for manufacturing same.
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WO/2022/233547A1 |
In this document a monolithic optical element for generating broadband radiation upon receiving input radiation at an input end of the optical element is disclosed, the optical element comprising: a hollow core region for guiding the inp...
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WO/2022/231815A1 |
Exemplary etching methods may include forming a plasma of a fluorine-containing precursor to produce plasma effluents. A first bias frequency may be applied while forming the plasma. The methods may include contacting a substrate housed ...
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WO/2022/230694A1 |
Provided is a phase shift mask blank that allows for manufacture of a phase shift mask having a highly accurate pattern. A phase shift mask blank (100) comprises a base material (10) and a phase shift layer (20) formed on the base materi...
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WO/2022/230772A1 |
Provided is a phase shift mask (100, 200) comprising: a substrate (10); a first semitransparent layer (20); a second semitransparent layer (20); and a light-shielding layer (30), wherein, on the surface of the substrate, a measurement ma...
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WO/2022/231829A1 |
Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing ch...
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WO/2022/226134A1 |
A method for in-situ wave front detection within an inspection system is disclosed. The method includes generating light with a light source and directing the light to a stage-level reflective mask grating structure disposed on a mask st...
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WO/2022/218073A1 |
A phase-shift mask and a manufacturing method therefor, the phase-shift mask comprising: a transparent substrate (101), wherein the transparent substrate (101) defines a light-transmitting region (104) and at least one light-shielding re...
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WO/2022/217793A1 |
A clamping device for a photomask (40), the device comprising a clamping assembly (10), a frame body (20) and a handle (30). The clamping assembly (10) is arranged on the frame body (20), and the clamping assembly (10) is used for clampi...
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WO/2022/220228A1 |
Provided are: a pellicle frame laminate 10 characterized by having a first adhesive layer 11 on an upper end surface 1a of a pellicle frame 1 having the upper end surface and a lower end surface and covering the first adhesive layer with...
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WO/2022/218315A1 |
The present application relates to a patterning material, a patterning composition, and a pattern forming method. The patterning material of the present application has a metal oxygen cluster framework, a radiation-sensitive organic liga...
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WO/2022/215609A1 |
The purpose of the present invention is to provide a pellicle frame with an adhesive layer with which it is possible to prevent deterioration in the flatness of the adhesive layer more effectively than before, further to moderate the str...
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WO/2022/207259A1 |
A patterning device for a lithographic apparatus arranged to project a pattern from the patterning device onto a substrate, the patterning device comprising: an imaging area having opposing first sides extending parallel to a scanning di...
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WO/2022/212375A1 |
In an embodiment, a method includes: receiving data representative of an electrical circuit including an arrangement of devices, inputs, outputs, and power sources; determining a minimum number of segments based on the received data; gro...
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WO/2022/210334A1 |
Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, with which it is possible to prevent electrostatic breakdown from occurring on ...
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WO/2022/210731A1 |
Provided is a pellicle with which it is possible to minimize damage to a pellicle film due to the pressure difference between the inside and outside of the pellicle. A pellicle (10A) includes a pellicle film (11A) and a support frame (...
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WO/2022/210159A1 |
The present invention prevents the tip of a corner portion of a photoresist layer pattern from blunting. A photomask (80) has formed therein a pattern comprising a light-blocking section (82) and a light-transmitting section (81), which ...
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WO/2022/204560A1 |
An interferometer and an imager may include a tunable light source, a beam splitter, a digital imager, and a processor system. The tunable light source may be configured to emit a beam. The beam splitter may be configured to direct the b...
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WO/2022/198886A1 |
Embodiments of the present application provide a semiconductor structure and a manufacturing method therefor. The manufacturing method for the semiconductor structure comprises: providing a substrate and an array region, the array region...
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WO/2022/201816A1 |
Provided is a mask blank that sufficiently satisfies requirements for cleaning resistance and chemical resistance and that makes it possible to produce a phase shift mask having favorable optical properties. The mask blank comprises a ...
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WO/2022/203024A1 |
Provided are a reflection-type mask blank, a reflection-type mask, a method for manufacturing a reflection-type mask, and a method for manufacturing a semiconductor device, with which it is possible to suppress the occurrence of blisteri...
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WO/2022/201138A1 |
This invention refers to a method (1000) for generating at least one local surface modification (480) of a material of an optical element (100, 300) used in a lithographic system. The method (1000) comprises the steps: (a) focusing a fir...
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WO/2022/193489A1 |
A photomask assembly, a patterned mask and a formation method therefor, and a formation method for an active area. The photomask assembly comprises: a first photomask (10) for forming a first patterned structure (510) on a substrate (100...
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WO/2022/196692A1 |
Provided are a phase shift mask blank, a phase shift mask, and a method for manufacturing a phase shift mask, in which transfer performance is improved by suppressing occurrence of a haze on the surface of a phase shift film, and reducin...
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WO/2022/196182A1 |
This pellicle contains a pellicle film containing carbon nanotubes and satisfying formula (1) below, and a support frame supporting the pellicle film. E0/D > 0.75 (1) (E0 represents the displacement energy when pressure is applied from 0...
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WO/2022/191042A1 |
The present invention provides: a phase-shift mask blank that is capable of sufficiently suppressing the occurrence of haze in a phase-shift film surface (upon a phase-shift mask); a phase-shift mask having few haze defects and a manufac...
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WO/2022/184578A1 |
Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first ori...
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WO/2022/184375A1 |
A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an evaluation test based on the data, determining whether to proceed with exposing a substrate based on the evaluation test,...
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WO/2022/185298A1 |
This invention refers to a method (2700) for optimizing a defect correction of an optical element (110, 500, 600, 2100) used in a lithographic process which comprises the steps: (a) determining whether the optical element (110, 500, 600,...
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WO/2022/184373A1 |
A carbon nanotube membrane comprising carbon nanotubes having a pre-selected bonding configuration or (m, n) chirality, characterised in that the carbon nanotube membrane comprises a substantial amount of carbon nanotubes having zigzag (...
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WO/2022/186004A1 |
Provided are a substrate with multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device with which it is possible to prevent, inter alia, a reduction in the reflectivity...
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WO/2022/182510A1 |
Methods and apparatus for reducing ruthenium oxide on an extreme ultraviolet (EUV) photomask leverage temperature, plasma, and chamber pressure to increase the reduction. In some embodiments, a method includes heating the EUV photomask w...
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WO/2022/182094A1 |
The present invention relates to a pellicle film for extreme ultraviolet lithography and a method for manufacturing same and, more particularly, to a pellicle film for extreme ultraviolet lithography, comprising a boron nitride nano stru...
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WO/2022/181418A1 |
The present invention provides a flexographic printing plate production method for achieving both desired recess depth and reproducibility of independent dots by increasing a hardened area around the respective independent dots and resol...
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WO/2022/181310A1 |
Provided is a mask blank that has a thin film for pattern formation that has a reduced surface roughness and film stress. The mask blank comprises a multilayer reflection film and a thin film for pattern formation in that order on a prin...
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WO/2022/179802A1 |
Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a mac...
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WO/2022/177780A1 |
A system and method for rotary motion with vacuum sealing is provided. The system includes a vacuum chamber, a component mount disposed in the vacuum chamber, and a base. A bellows is disposed between the base and the component mount, an...
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WO/2022/176833A1 |
[Problem] To provide: a pellicle capable of suppressing cracking of a pellicle film; and a method for manufacturing the pellicle. [Solution] This pellicle comprises: a silicon (Si) border including a boron (B)-containing Si layer; and a ...
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WO/2022/177771A1 |
A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer...
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WO/2022/176749A1 |
The present invention pertains to a reflective mask blank for EUV lithography in which a multilayer reflective film for reflecting EUV light and a phase shift film for shifting the phase of the EUV light are formed in the sequence listed...
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WO/2022/175531A1 |
The invention proposes a method for processing a sample (110) with a processing arrangement (120), comprising the steps of:taking up (S1) a particle (130) adhering on a sample surface (111) of the sample (110) with a measuring tip (122) ...
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WO/2022/175019A1 |
A system can include a light source configured to illuminate a surface of a pellicle, a scanner configured to scan the surface of the pellicle; a spectrometer configured to measure a Raman spectra of a reference signal and a test signal,...
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WO/2022/172878A1 |
Provided are a reflective photomask and a reflective photomask blank which reduce the influence of shadow effect and have a high transfer performance. A reflective photomask blank (100) according to the present embodiment comprises a sub...
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WO/2022/173777A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on th...
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WO/2022/172916A1 |
Provided are a reflective photomask and a reflective photomask blank which have a high contrast of micropatterns with respect to inspection light, and can minimize the shadow effect in EUV exposure. A reflective photomask blank (100) acc...
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WO/2022/173068A1 |
The present invention relates to a pellicle for protecting a photomask in an exposure process using light including extreme ultraviolet rays, and a method for manufacturing same, the pellicle comprising: a base protective film which is p...
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WO/2022/167177A1 |
There is described a lithographic apparatus including a membrane assembly and a radiation beam path, wherein the membrane assembly includes a membrane, the membrane being disposed in the radiation beam path, wherein the membrane assembly...
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WO/2022/169170A2 |
The present invention relates to a pellicle film for extreme ultraviolet lithography and a manufacturing method therefor, and more specifically to a pellicle film for extreme ultraviolet lithography, comprising a carbyne layer and a manu...
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WO/2022/169171A2 |
The present invention relates to a pellicle frame for extreme ultraviolet lithography. More specifically, the present invention relates to a pellicle frame for extreme ultraviolet lithography ensuring ventilation. The present invention p...
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WO/2022/166319A1 |
A light processing device (100), comprising a base (40), a light source (10) fixed on the base (40), a tray (20), and a digital mask (30) interposed between the light source (10) and the tray (20), wherein the tray (20) is used for placi...
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