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WO/2020/221547A1 |
A patterning device configured for use in a lithographic apparatus, the lithographic apparatus being configured to use radiation for imaging a pattern at the patterning device via projection optics onto a substrate. The patterning device...
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WO/2020/216572A1 |
Described herein are methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold...
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WO/2020/212107A1 |
Described herein is a method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patte...
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WO/2020/213661A1 |
[Problem] To provide: an adhesive agent for pellicles, which makes it possible to reduce a residue adhered to an exposure original plate that has been used in lithography, particularly ArF lithography, upon the peeling of the pellicle fr...
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WO/2020/213659A1 |
[Problem] To provide a pellicle, exposure original plate with pellicle, method for recycling exposure original plates and method for reducing peel residue, with which it is possible to reduce the residue which adheres to the exposure ori...
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WO/2020/213662A1 |
[Problem] To provide an adhesive for a pellicle that can reduce the amount of residue on an exposure original plate when the pellicle is peeled off from the exposure original plate after using lithography, in particular ArF lithography, ...
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WO/2020/212840A1 |
Methods are disclosed relating to the operation of a micro-structural fluid ejector in a fluid printing apparatus. The methods include providing an imaging system, capturing a digital image of the micro-structural fluid ejector and its s...
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WO/2020/210177A1 |
A system for stochastic reticle defect dispositioning is disclosed. The system includes a controller including one or more processors and memory. The one or more processors configured to acquire product metrology data of a product reticl...
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WO/2020/207774A1 |
A method for making a pellicle for EUV lithography, the method comprising: depositing a sacrificial layer onto a substrate; etching away part of the substrate so as to expose a part of the sacrificial layer; depositing a core layer onto ...
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WO/2020/207759A1 |
Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive t...
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WO/2020/209955A1 |
Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first ra...
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WO/2020/208848A1 |
Provided is a photomask obtained at low cost and through a straightforward production method, the photomask exhibiting sufficient ESD suppression effects, causing no exposure pattern destruction, and further having suitable exposure effi...
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WO/2020/200635A1 |
Disclosed is a method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate comprising at least a sub-field, the method comprising: obtaining an initial spatial profile associated with a spatial ...
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WO/2020/203338A1 |
The present invention prevents pressure from being exerted locally and minimizes generation of dust from a gripping part when a mask blank substrate is gripped by a transfer robot. This mask blank substrate 10 is provided with: first and...
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WO/2020/199525A1 |
The present application provides a support assembly and a mask support using same. The support assembly comprises: a base; an adjustment block, movably provided on the base; a first adjustment mechanism, capable of driving the adjustment...
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WO/2020/192010A1 |
Disclosed are a mask plate and a stitching exposure method. The mask plate comprises: a target exposure pattern (110) and a compensation exposure pattern (120), wherein the compensation exposure pattern (120) is located at a stitching en...
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WO/2020/196555A1 |
Provided is a substrate which is for a mask blank and of which the surface shape can be accurately calculated after being set on a mask stage of an exposure device. A substrate 10 for a mask blank comprises: a first main surface 12a wh...
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WO/2020/196836A1 |
The present invention addresses the problems of providing an adhesive solution that exhibits a high solution stability and providing a pellicle that, through the use of the adhesive solution, exhibits little adhesive residue and exhibits...
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WO/2020/191661A1 |
The present disclosure relates the technical field of display, and provides a display substrate, a display device, a mask plate, and a manufacturing method. In the method, a pattern structure is formed on a substrate. The substrate compr...
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WO/2020/187578A1 |
Described herein is a method of determining representative patterns for training a machine learning model to predict optical proximity corrections. The method includes obtaining a design layout comprising a set of group of patterns, each...
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WO/2020/189168A1 |
The present invention addresses the problem of providing a mask blank that makes it possible to further miniaturize a mask pattern or a hard mask pattern and improving the pattern quality, and to resolve this problem, a mask blank (100) ...
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WO/2020/187690A1 |
The invention relates to a measurement or inspection device, in particular a mask inspection device, comprising: an object (2) to be measured or inspected, a lens system (4) for measuring or inspecting a surface (2a) of the object (2), a...
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WO/2020/184473A1 |
Provided is a reflection-type mask blank which enables the further reduction of the shadowing effect of a reflection-type mask. A reflection-type mask blank (100) in which a multilayer reflection film (2) and an absorber film (3) are a...
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WO/2020/180584A1 |
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputte...
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WO/2020/180586A1 |
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and EUV lithography systems are disclosed. The EUV mask blanks comprise an absorber including a tuning layer and a stack of absorber layers of a first material A and a ...
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WO/2020/180585A1 |
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputte...
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WO/2020/180582A1 |
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputte...
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WO/2020/179463A1 |
The present invention addresses the problem of providing a mask blank with which mask patterns and hard mask patterns can be made finer and pattern quality can be improved. To solve the problem, a mask blank (100), which has a structure ...
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WO/2020/178008A1 |
Disclosed is an optical component, being configured to function as an optical frequency converter in a broadband radiation source device. The optical component comprises a gas cell, and a hollow-core photonic crystal fiber at least parti...
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WO/2020/175354A1 |
Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask and form a fine and highly accurate absorber pattern. A reflective mask blank having a multilayer reflection film...
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WO/2020/174342A1 |
Methods for matching features in patterns for electronic designs include inputting a set of pattern data for semiconductor or flat panel displays, where the set of pattern data comprises a plurality of features. Each feature in the plura...
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WO/2020/173892A2 |
The invention relates to an object handling apparatus for handling a generally planar object, the object handling apparatus comprising: two support arms, at least one of the two support arms movable relative to other support arm generall...
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WO/2020/173654A1 |
Described herein is a method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) raw images (402) of the substrate comprising a printed pattern corresponding to a reference pattern (401...
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WO/2020/175355A1 |
The present invention provides a pellicle intermediate, a pellicle, a method for manufacturing the pellicle intermediate and a method for manufacturing the pellicle, with which it is possible to improve the quality of a pellicle film. ...
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WO/2020/174341A1 |
Methods for compressing shape data for a set of electronic designs include inputting a set of shape data, where the shape data represents a set of shapes for a device fabrication process. A convolutional autoencoder is used on the set of...
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WO/2020/172236A1 |
Embodiments of the present disclosure generally relate to nanocomposite pellicles for extreme ultraviolet lithography systems. A pellicle comprises a plurality of carbon nanotubes arranged in a planar sheet formed from a plurality of met...
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WO/2020/169303A1 |
Described herein are training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optimal proximity correction (OPC) image for a mask. The method involves obtaini...
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WO/2020/167446A1 |
Embodiments described herein provide a method of large area lithography. One embodiment of the method includes projecting at least one incident beam to a mask in a propagation direction of the at least one incident beam. The mask having ...
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WO/2020/166475A1 |
The purpose of the present invention is to provide a mask blank which has a phase shift film, and which can suppress thermal expansion of a pattern of the phase shift film, and suppress movement of the pattern caused by the thermal expan...
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WO/2020/164002A1 |
Embodiments of semiconductor fabrication methods are disclosed. In an example, a method for forming a mark for locating patterns in semiconductor fabrication is disclosed. A wafer is divided into a plurality of shots. Each of the plurali...
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WO/2020/162384A1 |
The present invention prevents resonance of a reflector and can so prevent generation of pseudo defects. According to the present invention, a holding member provided to a lateral surface of a roughly-rectangular frame for holding a mask...
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WO/2020/162605A1 |
The present invention relates to alkali-free glass comprising, in mol% in terms of oxides, 63-75% SiO2, 10-16% Al2O3, 0-5% B2O3, 0.1-15% MgO, 0.1-12% CaO, 0-8% SrO, and 0-6% BaO, wherein the ratio [MgO]/[CaO] is 1.5 or less, formula (A) ...
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WO/2020/160851A1 |
An attenuated phase shift patterning device comprising a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, t...
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WO/2020/162979A1 |
This application discloses a computing system to identify structures of an integrated circuit capable of being fabricated utilizing a lithographic mask described by mask layout data and to generate process windows for the identified stru...
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WO/2020/162606A1 |
The present invention relates to alkali-free glass comprising, in mol% in terms of oxides, 63-75% SiO2, 10-16% Al2O3, more than 0.5% but not more than 5% B2O3, 0.1-15% MgO, 0.1-12% CaO, 0-8% SrO, and 0-6% BaO, wherein the ratio [MgO]/[Ca...
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WO/2020/162604A1 |
The present invention relates to alkali-free glass comprising, in mol% in terms of oxides, 63-69% SiO2, 8-13% Al2O3, 0.5-4% B2O3, 8-15% MgO, 4-12% CaO, 0-4.5% SrO, and 0-1% BaO, wherein the ratio [MgO]/[CaO] is 0.67-3.75, formula (A) ret...
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WO/2020/161235A1 |
The present application relates to a device (1000) for determining placements of pattern elements (350) of a reflective photolithographic mask (400) in the operating environment (450) thereof, wherein the device (1000) comprises: (a) at ...
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WO/2020/155588A1 |
A mask strip, an array substrate (100), a display screen (200) and a display device. The mask strip is used for making a light-emitting structure layer on the array substrate (100). The mask strip comprises a plurality of sub-mask plates...
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WO/2020/154978A1 |
A Hessian-free lithography mask optimization method, comprising the following steps: S1, inputting the design layout of a mask to be optimized; S2, placing an error monitoring point on the design layout of said mask; S3, obtaining the op...
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WO/2020/156777A1 |
Described herein is a method for determining a training pattern in a layout patterning process. The method comprises generating a plurality of features from patterns in a pattern set; grouping the patterns in the pattern set into individ...
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