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WO/2003/019638A1 |
A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid havin...
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WO/2003/009966A1 |
A method and system for cleaning conditioning devices (10) used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm (4) for holding and transporting the conditioning device (10) between the poli...
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WO/2003/008151A1 |
Described are fixed abrasive articles including wear indicators. Exemplary abrasive article (2) comprising abrasive composite elements (4) in the form of posts. The abrasive composite elements (4) include a binder and abrasive particles ...
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WO/2003/002299A2 |
A material (26) with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head (20) or a polishing pad (100). A polishing apparatus can include a pad cleaner (40) with nozzles (44) to direct jets...
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WO/2003/000462A1 |
An in-situ measurement of thickness profiles of polishing pads (1) used in chemical mechanical polishing (CMP) is enabled by arranging sensors (7) for measuring distances together with a conditioner (6). The sensors (7) are provided as e...
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WO/2002/103778A2 |
A system, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being th...
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WO/2002/102548A1 |
A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus (100) having a polishing pad (102) and a conditioning disk (108), polishin...
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WO/2002/102549A1 |
A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus (100) having a polishing pad (1080) and a conditioning disk (1030), polish...
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WO/2002/096600A1 |
A slurry removal control mechanism for a CMP polisher is provided. After slurry dispense has been terminated, a high pressure fluid spray removes the slurry from the polishing pad, while the platen causes the pad to rotate at a high rpm ...
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WO/2002/087823A2 |
Apparatus for machining the lateral surface of guide wheels (131) of grinding machines (100) also comprising an operating wheel (111), which wheels (131, 111) rotate about respective longitudinal axes parallel to each other, said apparat...
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WO/2002/078903A2 |
Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. A...
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WO/2002/076674A2 |
The present invention is a method and apparatus for conditioning a polishing pad (108) used for chemically mechanically polishing semiconductor wafers. The conditioning device (107) includes a rigid elongated element (300) that resists b...
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WO/2002/071445A2 |
Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object (115) comprising a shaft (260) having a shaft axis (270) and being connected with a polishing head (250) which ...
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WO/2002/066207A1 |
The apparatus for polishing a substrate while pressing the substrate into sliding contact with the fixed abrasive, comprises: a light source (32) for dressing the fixed abrasive by light irradiation; and a device (41) for supplying a che...
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WO2000012264A9 |
A polishing pad (400) having a cross-sectional open area (404) which varies with depth from the pad surface is provided. The cross-sectional open area (404) of the pad (400) may increase and/or decrease moving away from the outer pad sur...
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WO/2002/057051A1 |
A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser driv...
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WO/2002/055260A1 |
The invention relates to a method for operating a centreless grinder for the throughfeed grinding of longitudinal workpieces (1), such as bars and pipes. Said grinder comprises a grinding unit with at least one driven grinding disc (3), ...
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WO/2002/053322A2 |
A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an ...
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WO/2002/049807A1 |
A CMP conditioner for suppressing microscratches on the surface of a semiconductor substrate and for obtaining stable CMP conditioner characteristics. The CMP conditioner by a first mode comprises a support member and rigid grains provid...
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WO2000063963A9 |
A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtext...
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WO/2002/043919A1 |
The invention relates to a method and to a device for producing molds for toothed belts. A grinding wheel (9) that has a profiled periphery is used instead of a milling cutter to provide the circumference of a roller-shaped blank (4) wit...
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WO/2002/043923A1 |
A cleaning device for cleaning a polishing pad (12) has a first cleaning system (5) with an abrasive disk (50) and a second cleaning system (2) with a distributor device (20) for discharging a gas-water mixture at high pressure. The poli...
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WO/2002/036305A1 |
A centreless cylindrical grinding machine, for through-feed and in-feed grinding of various workpieces (8), has a first driven positioning axis X¿S? for a grinding spindle head (2) with a grinding wheel (1) and a second driven positioni...
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WO/2002/035592A1 |
The portion of a polishing element (7) that sticks out to a wafer's surrounding from the wafer (2) being polished is supported by the guide surface (5a) of an annular guide member (5), the guide surface (5a) being positioned in almost th...
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WO/2002/035587A1 |
A method of producing a semiconductor device capable of setting various processing conditions such as a polishing time in a CPM process that are always optimum for wafers in a product lot even when an error occurs with a film thickness o...
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WO/2002/034467A1 |
The invention relates to a polisher for polishing a workpiece, such as a semiconductor wafer, so that it may have a flat mirror finish. The polisher comprises a polisher table (1) with a polishing face, and a top ring (3). A workpiece is...
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WO/2002/030618A1 |
A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems (200a) is provided. The method includes applying radiation to an amount of slurry (218) before the slurry (2...
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WO/2002/028578A2 |
A cutting tool has a flute (35) and land (40) which follow a helix angle (HA), wherein the flute and land are connected to one another with a convex heel to provide a smooth contour to the tool surface and to provide improved performance...
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WO/2002/028593A2 |
A grinding wheel (110) for producing a cutting tool having a flute (35) and a land (40) with a margin which follow a helix angle (HA) is disclosed along with a method for using such a grinding wheel. Additionally, a crush roll (410) for ...
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WO/2002/028596A1 |
A system for conditioning a pad is provided. The system includes a pad conditioning media (234), a feed-roll (232a) containing a supply of the pad conditioning media, and a take-up roll (232b) for receiving an end of the pad conditioning...
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WO/2002/028598A1 |
A method for conditioning a polishing pad includes, pressing a conditioning surface of a conditioning pad comprising a first polymer against a polishing surface of the polishing pad comprising a second polymer, and producing relative mot...
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WO/2002/028599A2 |
A grinding wheel (110) for producing a cutting tool (10) having a flute (35) and a land (40) along with double margins which follow a helix angle is disclosed along with a method for using a grinding wheel (110). Additionally, a crush ro...
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WO/2002/026444A1 |
The present invention provides device and system for suppressing edge instability during a chemical mechanical planarization (CMP) process for planarizing a surface topography on a wafer. A wafer carrier (308) holds and rotates a wafer o...
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WO/2002/020216A1 |
A method of grinding a surface of a flute (3) on a cutting tool (2) over a range of tool diameters using a grinding machine having a rotatable grinding wheel (1) that is adapted to move relative to the cutting tool. The method includes d...
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WO/2002/016075A2 |
A chemical mechanical polishing (CMP) system (200) is provided. A carrier (206) has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer (202) having a one or more formed layers to be p...
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WO/2002/016078A2 |
CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with dete...
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WO/2002/015247A2 |
A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final ...
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WO/2002/006008A1 |
A contact-discharge truing/dressing method and a device therefor, capable of very simply conducting truing/dressing of a superabrasive grindstone, especially a superabrasive grindstone having metal binder. The contact-discharge truing/dr...
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WO/2002/002277A2 |
A method and apparatus for conditioning a polishing pad (12) are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member ...
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WO2000062977A9 |
A method of conditioning a polishing pad for use with a polishing machine. The method includes installing the polishing pad to be conditioned on the polishing machine's platen (12) and applying a conditioning load force to the pad (20). ...
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WO/2001/098028A1 |
A polishing pad (100), comprising a pad main body (10) and a transparent window member (2) formed integrally with the pad main body (10), wherein the material of the window member (2) is made higher in grinding ability than the material ...
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WO1999062671A9 |
An apparatus for polishing a silicon wafer comprises a polishing turntable mounted for rotation and adapted to receive a polishing pad. The apparatus further comprises a mounting fixture for rotating the wafer relative to the polishing p...
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WO/2001/091974A1 |
A method of conditioning a polish pad (202) at the point of polish and for dispensing slurry at the point of polish. In one embodiment, the method comprises several steps. In the first step, polishing slurry is received at a CMP machine....
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WO/2001/091969A2 |
A method of conditioning a polish pad (202) at the point of polish. In one embodiment, the method comprises several steps. In the first step, polishing slurry is received at a CMP machine (200). Next, a polish pad (202) is rotated. Then,...
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WO/2001/091973A1 |
A method of dispensing slurry at the point of polish. In one embodiment, the method comprises several steps. In the first step, polishing slurry is received at a CMP machine. Next, a polish pad (202) is rotated. Then, the polishing slurr...
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WO/2001/089766A1 |
The invention relates to a method for grinding metallic workpieces containing, in particular, nickel, whereby a rotationally driven grinding wheel (2) is continuously dressed by a rotationally driven dressing wheel (3) during the grindin...
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WO/2001/078124A1 |
It is described that conditioner and conditioning process for polishing pad which has a various kind, property and state in chemical mechanical polishing. Conditioner moves up and down by a pneumatic mechanism independently. It is instal...
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WO/2001/058644A1 |
A method and apparatus (130) for improving the pad conditioning process of a polishing pad (120) in a chemical-mechanical polishing apparatus employs closed loop control of the polishing pad conditioning process. An arrangement includes ...
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WO/2001/054862A1 |
A system and method for polishing semiconductor wafers includes a rotatable polishing pad (36) movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer (w). A pad dressing assembly...
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WO/2001/049453A1 |
A method and apparatus for conditioning a polishing pad is described. The method includes steps of moving a cylindrical roller (202) having an abrasive substance affixed to it against a moving polishing pad (46). The roller may be active...
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