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WO/2024/087176A1 |
The present application relates to the technical field of electronics. Provided are an integrated apparatus and a manufacturing method therefor, and an integrated circuit, a detection apparatus and a terminal, which are used for reducing...
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WO/2024/089024A1 |
The invention relates to a cooling method (10) for controlling the temperature of a cooling device (16) taking into account heating at least one machine component (12) of a process machine (14) during operation of the process machine (14...
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WO/2024/089701A2 |
A system for transmitting laser power to a remote receiver, comprising a laser diode, an optical system for collimating and focusing the laser beam onto the receiver, and a scanning system for directing the beam towards the receiver. The...
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WO/2024/083613A1 |
The invention relates to a semiconductor component (10) for emitting laser light, comprising a main body (11) and, arranged on a surface (18) of the main body (11), at least one mesa body (12) comprising a superficial emission region (13...
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WO/2024/082726A1 |
The present application provides a circuit structure, a driving circuit of a semiconductor laser, and a laser radar transmitting module. The circuit structure comprises a charging circuit and a discharging circuit; an input end of the ch...
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WO/2024/084693A1 |
A semiconductor laser light source device comprising a metal stem (1), a temperature control module (3) secured to the front surface of the metal stem (1), a first support block (4) secured to the temperature control module (3), a first ...
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WO/2024/084286A2 |
A system and method for assembly. In some embodiments, the method includes: optically aligning a transfer stamp with a platform wafer, the transfer stamp including a device coupon for bonding to the platform wafer, the device coupon incl...
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WO/2024/083995A1 |
The invention relates to an oscillator arrangement for generating THz radiation with an active laser layer structure (10) based on a semiconductor material for emitting laser light (107) of at least one wavelength, the main emission dire...
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WO/2024/083505A1 |
The invention relates to an optoelectronic module (1). The optoelectronic module (1) comprises a first semiconductor component (11), a second semiconductor component (12) and a third semiconductor component (13). The semiconductor compon...
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WO/2024/085477A1 |
The present invention relates to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, and, more specifically, to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, the diode b...
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WO/2024/085108A1 |
A semiconductor light-emitting element (1) emits light from a front end surface (1F) and comprises a semiconductor laminate (1S) having a waveguide, a first P-side electrode (71), and a pad electrode (73). The semiconductor light-emittin...
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WO/2024/085205A1 |
The present invention achieves a light-emitting device that emits light with a good polarization ratio. Provided is a light-emitting device comprising: a first sub-mount which has a ceramic substrate that contains AlN and a plurality of ...
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WO/2024/084898A1 |
Provided is a vertical cavity light emitting element having a low threshold current density, high luminous efficiency, and improved lifespan. A vertical cavity surface light emitting laser 10 comprises: a semiconductor DBR12; an n-type s...
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WO/2024/078268A1 |
A laser device, comprising a housing (100), a plurality of laser chip assemblies (200), and a shaping and homogenizing component (300). The housing (100) comprises a bottom plate (101) and a side wall (102). The side wall (102) is provid...
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WO/2024/074254A1 |
In one embodiment, the optoelectronic light source (1) comprises : - a first semiconductor laser (21) configured to emit a first laser beam (L1), and - a redirecting optical element (4), wherein the first laser beam (L1) runs from the fi...
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WO/2024/076950A1 |
An optics-integrated confinement apparatus system comprises a confinement apparatus chip having a confinement apparatus formed thereon and having at least one apparatus optical element disposed and/or formed thereon.
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WO/2024/076720A1 |
The process of heating up a cavity with a diode laser or light beam source with a booster current pulse followed by application of a drive to the diode to produce a continuous wave (CW) over time while the cavity cools (spontaneously or ...
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WO/2024/076423A1 |
A display system includes an integrated laser and modulator device and a display assembly. The integrated laser and modulator device includes a laser component configured to facilitate light emission responsive to applied current and a m...
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WO/2024/075594A1 |
This semiconductor laser device comprises: a semiconductor laser element (11) and a semiconductor laser element (12); a reflecting mirror (71) that reflects first laser light emitted from the semiconductor laser element (11); and a refle...
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WO/2024/076443A1 |
Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical...
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WO/2024/076393A1 |
The system and method for mounting a high power laser having a coefficient of thermal expansion that is thermally matched for the gain medium and the mount. In some cases, the gain medium is clamped by the mount along longitudinal edges ...
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WO/2024/075595A1 |
This semiconductor laser device (1) comprises: a housing (2) that has a flat bottom surface (6a); semiconductor laser elements (10–15) that are arranged in the housing (2); fast axis collimator lenses (30–35) that respectively collim...
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WO/2024/074941A1 |
A pulsed laser diode driver includes a source capacitor that receives a refresh current at a first terminal and develops a source voltage therefrom. A first terminal of an inductor is connected to the first terminal of the source capacit...
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WO/2024/068344A1 |
A photonic integrated circuit (10) comprises a pumping laser diode (100) that is designed to emit pumping radiation (11). The photonic integrated circuit (10) furthermore comprises a gain medium (105), which is suitable for absorbing the...
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WO/2024/070857A1 |
A light emitting device according to the present invention includes: a base having a mounting surface; a plurality of semiconductor laser elements each emitting a laser beam in a first direction and arranged on the mounting surface along...
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WO/2024/071244A1 |
This semiconductor module comprises a substrate, a plurality of semiconductor elements positioned on the substrate, and a control IC positioned on the substrate to control the plurality of semiconductor elements. Further, each of the plu...
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WO/2024/066582A1 |
A light-emitting chip assembly and a laser packaging assembly, belonging to the technical field of optoelectronics. The light-emitting chip assembly is configured to emit laser light; a light-emitting chip has a first surface (M1) and a ...
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WO/2024/070252A1 |
This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first ligh...
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WO/2024/067760A1 |
An integrated laser (100) and a preparation method therefor, which relate to the technical field of semiconductor devices. The integrated laser (100) comprises a substrate (110), wherein the substrate (110) is divided into a master laser...
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WO/2024/067218A1 |
A projection device (1000), comprising a light source (100), an optical modulation assembly (200), and a lens (300). The light source (100) comprises a laser (10). The laser (10) comprises a bottom plate (101), a frame body (102), a plur...
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WO/2024/069755A1 |
An optical semiconductor device (100) according to the present disclosure comprises a semiconductor laser unit (70) and an optical modulator unit (72) that are formed on a common semiconductor substrate (1). The semiconductor laser unit ...
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WO/2024/070351A1 |
A nitride-based semiconductor light-emitting device (100) emits light and comprises an N-type cladding layer (104), an N-side light guide layer (106), an active layer (107), an electron barrier layer (109), a P-type intermediate layer (1...
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WO/2024/069606A1 |
Silicon photonic crystal (10; 10'; 10") comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said na...
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WO/2024/072664A1 |
A system for reducing or eliminating wavelength variations of laser light is provided. The system comprises a semiconductor-based laser source emitting laser light, an optical scanner, and one or more optical elements disposed between th...
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WO/2024/068284A1 |
In at least one embodiment, the method for producing a semiconductor laser (100) comprises: - providing a semiconductor body (10) having a first region (1) of a first conductivity type, a second region (2) and an active region (3) for pr...
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WO/2024/066412A1 |
Provided in the present invention are an infrared light-emitting diode and a manufacturing method therefor. The infrared light-emitting diode comprises, from bottom to top, a substrate, an n-type semiconductor layer, a first waveguide la...
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WO/2024/063402A1 |
The present invention relates to a heater block capable of precise control of a heating temperature and a substrate device including the heater block. The heater block may include: a first laser module having multiple laser cells; a seco...
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WO/2024/064746A1 |
An integrated photonic architecture for coherent signal generation and processing. This architecture can enhance coherent transceiver performance for many applications, including remote sensing, LiDAR, high-speed data communication, and ...
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WO/2024/061682A1 |
The invention concerns an edge emitting laser device, comprising an n-cornered mesa shaped substrate, whereas n is an even number. An elongated gain region with an active area, in particular a quantum well or a multi-quantum well is loca...
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WO/2024/062787A1 |
Provided is a light source device that is capable of combining and emitting a plurality of wavelengths of laser light, has a simple structure, and enables a decrease in device size. The light source device comprises: a stem; a pluralit...
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WO/2024/061717A2 |
The invention relates to an optoelectronic arrangement (1). The optoelectronic arrangement (1) comprises a semiconductor body (10) configured to emit coherent electromagnetic radiation in a main emission direction (10E), an optical defle...
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WO/2024/062979A1 |
Provided is a semiconductor laser element in which carrier loss can be reduced. A semiconductor laser element according to the present invention has, in the following order in the upward direction, an n-side semiconductor layer, an activ...
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WO/2024/060439A1 |
An electro-absorption modulated laser and an optical module. The electro-absorption modulated laser comprises: a substrate (580), and a DFB quantum well (513) and an EAM quantum well (522) arranged side by side above the substrate (580);...
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WO/2024/063514A1 |
A LiDAR device according to an embodiment of the present invention includes a light emitting unit that generates an output light signal and irradiates same to a target area, a light receiving unit that receives an input light signal that...
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WO/2024/061605A1 |
The invention relates to a laser device comprising at least one laser diode designed to emit light of a first wavelength, and comprising a photonic integrated circuit comprising an output and comprising an input, the input being coupled ...
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WO/2024/056327A1 |
The present disclosure relates to a method for fabricating a single-mode DFB laser (100), the method comprising: providing a first ensemble of layers comprising an N-doped planar substrate (101), a first grating layer (102) and a spacer ...
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WO/2024/056669A1 |
There is described an apparatus and method for generating a wavelength tuneable broadband optical frequency comb. A suitable apparatus comprises a master laser unit and a gain switched (semiconductor Fabry Perot) slave laser. The gain-sw...
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WO/2024/057358A1 |
A semiconductor laser (10) according to the present invention comprises a distributed feedback (DFB) region (100) including an active layer (105) and a uniform grating (104) and two distributed Bragg reflector (DBR) region (200, 300) inc...
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WO/2024/058088A1 |
This semiconductor light-emitting device comprises: a substrate having a substrate surface; a lateral surface light-emitting element that is provided on the substrate surface and has a first light-emitting lateral surface which emits lig...
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WO/2024/058087A1 |
This semiconductor laser device comprises a substrate that has a substrate surface, a semiconductor laser element that is provided on the substrate surface, and a translucent sealing resin that seals the semiconductor laser element. The ...
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