Title:
SEMICONDUCTOR LASER LIGHT SOURCE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/084693
Kind Code:
A1
Abstract:
A semiconductor laser light source device comprising a metal stem (1), a temperature control module (3) secured to the front surface of the metal stem (1), a first support block (4) secured to the temperature control module (3), a first dielectric substrate (5) that has the back surface secured to the first support block (4) and on the front surface of which a semiconductor light modulation element (6) is secured and a first ground electrode pattern (5a) is formed, a second support block (9) secured to the front surface of the metal stem (1), and a second dielectric substrate (10) that is secured to the second support block (9) and on the front surface of which a second ground electrode pattern (10a) is formed, wherein a metal film (13) electrically connected to the second ground electrode pattern (10a) is formed on a region of the second dielectric substrate (10) side surface located on the first dielectric substrate (5) side, said region having a length of at least one-half of said side surface.
Inventors:
NAKANO SEIJI (JP)
Application Number:
PCT/JP2022/039331
Publication Date:
April 25, 2024
Filing Date:
October 21, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/02212
Domestic Patent References:
| WO2019229825A1 | 2019-12-05 |
Foreign References:
| JP2008153467A | 2008-07-03 | |||
| JP2022126893A | 2022-08-31 | |||
| JP2011197360A | 2011-10-06 | |||
| JP2021044331A | 2021-03-18 | |||
| US20210159666A1 | 2021-05-27 |
Attorney, Agent or Firm:
PALMO PATENT FIRM, P.C. (JP)
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