Title:
VERTICAL CAVITY LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/084898
Kind Code:
A1
Abstract:
Provided is a vertical cavity light emitting element having a low threshold current density, high luminous efficiency, and improved lifespan. A vertical cavity surface light emitting laser 10 comprises: a semiconductor DBR12; an n-type semiconductor layer 13 formed on the semiconductor DBR 12; an active layer 15 provided on the n-type semiconductor layer 13; an intermediate layer 16 provided on the active layer 15; an electron barrier layer 17 provided on the intermediate layer 16 and having a composition containing Al; a p-type semiconductor layer 18 which is provided on the electron barrier layer 17, has a composition containing Al, and is doped with an impurity; and a semiconductor DBR 25 provided on the p-type semiconductor layer 18. The electron barrier layer 17 is a composition gradient layer in which the Al composition decreases in the direction away from the active layer 15. The impurity concentration of the impurity has a peak within the electron barrier layer 17, and decreases in the direction approaching the active layer 15 from the peak.
Inventors:
KURAMOTO MASARU (JP)
Application Number:
PCT/JP2023/034557
Publication Date:
April 25, 2024
Filing Date:
September 22, 2023
Export Citation:
Assignee:
STANLEY ELECTRIC CO LTD (JP)
International Classes:
H01S5/183; H01S5/343
Domestic Patent References:
| WO2020230669A1 | 2020-11-19 | |||
| WO2019146478A1 | 2019-08-01 | |||
| WO2018003551A1 | 2018-01-04 | |||
| WO2020158254A1 | 2020-08-06 | |||
| WO2006109418A1 | 2006-10-19 |
Foreign References:
| JP2021027194A | 2021-02-22 | |||
| JP2008047688A | 2008-02-28 | |||
| JP2003273473A | 2003-09-26 | |||
| JP2016157910A | 2016-09-01 | |||
| US20130028283A1 | 2013-01-31 |
Attorney, Agent or Firm:
DELOITTE TOHMATSU IP FIRM (JP)
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