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WO/2024/118543A2 |
Described are concepts, systems, methods, and machines for providing a device (e.g., electronic device) on a transferable, ultra-thin substrate. The described concepts, systems, methods, and machines may be used to produce an electronic ...
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WO/2024/118847A1 |
This disclosure pertains to pedestal assemblies for supporting wafers in semiconductor manufacturing tools and chambers. Such pedestal assemblies may have a pedestal base that is configured with an internal plenum volume having a plurali...
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WO/2024/116625A1 |
[Problem] To provide a safety assistance device that can improve operation efficiency of an operator while appropriately securing safety of the operator. [Solution] A safety assistance device 5 assists safety of an operator U who perform...
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WO/2024/116036A1 |
The present invention provides a semiconductor device that is easy in size reduction. The semiconductor device comprises a transistor, a first insulating layer, and a second insulating layer. The transistor has first to third conductive ...
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WO/2024/114560A1 |
The present application provides a method for eliminating gate-all-around nanosheet channel damage. The method comprises: forming two or more channel layers and one or more sacrificial layers alternately on a substrate in sequence to for...
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WO/2024/117182A1 |
Provided is a conductive paste with which it is possible to increase discharge stability, increase conduction reliability even when mounted at a relatively low temperature, and maintain high conduction reliability even when cooling and h...
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WO/2024/113628A1 |
Provided in the embodiments of the present application are a thin film transistor, a display panel, and a fabricating method of the thin film transistor. The thin film transistor comprises: a substrate; an active layer formed on the subs...
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WO/2024/113239A1 |
The present application relates to a gravure roller mechanism and a coating module. The mechanism comprises a roller sleeve (12), the roller sleeve (12) being hollow inside; and a magnetic field generation device (15) accommodated in the...
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WO/2024/116730A1 |
The present invention provides a technique by which the whole surface of a substrate can be adequately hydrophobized in a shorter time. This substrate treatment device comprises a substrate-holding part (2), at least one central nozzle (...
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WO/2024/117033A1 |
A sleeve 222 comprises a first surface treated portion 29 by electroless nickel plating at least on both ends in an axial direction, in an inner circumferential surface thereof. The first surface treated portion 29 has an inner diameter ...
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WO/2024/116412A1 |
This member 10 for a semiconductor manufacturing device comprises a ceramic plate 20, plug disposition holes 24, dense plugs 50, gas passages 60, and a base plate 30. The ceramic plate 20 has a wafer placement surface 21 on the upper sur...
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WO/2024/116868A1 |
Provided is a processing method for selectively etching an oxygen-containing film on a substrate having the oxygen-containing film and a nitrogen-containing film formed on a surface thereof, the processing method comprising: a step for s...
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WO/2024/113356A1 |
A nitride-based semiconductor carrier comprises an adjusting carrier, a top carrier, a plurality of adjusting devices, a wafer cassette, and a nitride-based semiconductor wafer. The top carrier is disposed above the adjusting carrier. Th...
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WO/2024/116264A1 |
A semiconductor device according to one aspect of the present invention includes: a substrate; an inorganic interlayer insulating film layered on the substrate; an organic interlayer insulating film layered on the inorganic interlayer in...
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WO/2024/117181A1 |
Provided is a conductive paste that can be placed on wiring with high precision, can prevent the misalignment of chips and uneven distribution of conductive fillers even when objects are transported vertically during the manufacturing pr...
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WO/2024/116700A1 |
The present invention relates to a polishing information processing device provided to a polishing device that polishes a peripheral edge section of a substrate. A polishing information processing device (112) comprises: an information a...
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WO/2024/117807A1 |
The present invention relates to: a precursor, comprising a compound represented by chemical formula 1, for forming a scandium- or yttrium-containing thin film; a method for forming a scandium- or yttrium-containing thin film using same;...
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WO/2024/118385A1 |
A method includes receiving, by a processing device, data indicative of performance of a plurality of process chambers. The method further includes providing the data indicative of performance of the plurality of process chambers to a mo...
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WO/2024/116747A1 |
An ion implantation device (10) comprises: a beam generating device (12) that generates an ion beam for irradiation of objects (W1, W2) to be processed, and that performs irradiation with the ion beam over an irradiation range, the size ...
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WO/2024/115033A1 |
The disclosure provides an electrostatic clamp for clamping an object, comprising: an electrode layer; a first isolating layer comprising an electrically isolating flexible material arranged on top of the electrode layer, the first isola...
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WO/2024/114317A1 |
Provided are a wafer positioning system and method. The wafer positioning method comprises: a manipulator placing an acquired wafer on a first supporting area of a lower chamber of a semiconductor processing device according to a set or ...
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WO/2024/116388A1 |
The present invention comprises: a circuit (5) under measurement; a light input/output unit (7A) that is connected to the circuit (5) under measurement; a light input/output unit (7B) that is not connected to the circuit (5) under measur...
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WO/2024/116592A1 |
Implemented is a cycle including: a) a process in which a first substance containing a first element and free of chlorine is supplied to a substrate having recesses on a surface thereof, thereby causing at least a portion X of the molecu...
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WO/2024/116946A1 |
This film formation method comprises step a) and step b). Step a) forms a metal oxide film. Step b) dopes the metal oxide film with a dopant, the dopant being such that, when the metal oxide film is doped therewith, an energy difference ...
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WO/2024/116924A1 |
This semiconductor device comprises a first lead, a semiconductor element, a sealing resin, a conductive member and a defining member. The first lead includes a die pad that has a die-pad main-surface facing one side in the thickness dir...
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WO/2024/119023A1 |
A particle shield for an actuator housing in a semiconductor equipment system includes a ring that mounts to the actuator housing, and a plate that mounts to a Z-axis stage that moves relative to the actuator housing. The ring includes a...
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WO/2024/114862A1 |
The invention relates to an apparatus (1) for testing an electronic semiconductor component (102a), which has a sensor layer (104) for detecting a gaseous substance and is formed on a substrate (101), using a test gas. In this case, prov...
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WO/2024/116131A1 |
A thin film of gold includes a plurality of gold atoms. The thin film is defined by a thickness that corresponds to one layer or a plurality of discrete layers of the gold atoms. The thin film exhibits non-conducting and semiconductor be...
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WO/2024/114961A1 |
The invention relates to a semiconductor assembly (2), in particular a semiconductor assembly for a rectifier (64), comprising at least one semiconductor element (4). According to the invention, in order to improve the recyclability of t...
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WO/2024/117021A1 |
Provided is a heat resistant adhesive film that can be attached to the back surface of a lead frame after a wire bonding step in a method for producing a semiconductor package, said heat resistant adhesive film comprising an adhesive lay...
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WO/2024/118857A1 |
Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference...
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WO/2024/116434A1 |
An integrated circuit according to the present invention is formed by forming, on a heat dissipating substrate having a higher thermal conductivity than InP, a plurality of elements that are each made of a compound semiconductor and form...
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WO/2024/113095A1 |
A nitride-based semiconductor device includes a nitride-based buffer layer, a barrier layer and a channel layer, a first nitride-based transistor and a second nitride-based transistor, and at least one STI. The barrier layer and the chan...
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WO/2024/118383A1 |
A method includes receiving, by a processing device, first trace data associated with a first processing chamber, wherein the first processing chamber satisfies one or more performance metrics. The method further includes generating targ...
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WO/2024/113546A1 |
Provided in the present invention are a silicon carbide MOS device and a manufacturing method therefor. The crystal face migration rate of a second side of a trench gate structure is greater than the crystal face migration rate of a firs...
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WO/2024/117334A1 |
An embodiment relates to a display device having a semiconductor light-emitting element, and an apparatus for manufacturing same. The display device having the semiconductor light-emitting element according to the embodiment may comprise...
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WO/2024/114893A1 |
In one embodiment, the semiconductor device (1) comprises: - a gate electrode (33), - a first semiconductor region (21) of a first conductivity type at a top side (20) of a semiconductor body (2), - a plug region (24) of a second conduct...
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WO/2024/116732A1 |
This semiconductor element includes a first transistor and a second transistor on an amorphous substrate, wherein: the first transistor includes a buffer layer, a first nitride semiconductor layer provided on the buffer layer, a second n...
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WO/2024/116746A1 |
In the present invention, an ion injecting device 10 comprises an ion source 20 that generates ions, an extraction unit 22 that extracts ions from the ion source 20 and generates an ion beam, a beam scanning unit 28 that is configured to...
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WO/2024/118238A1 |
A method of making a semiconductor device (10) includes providing semiconductor region (14) of a first conductivity type. A first region (141) comprising the first conductivity type within the semiconductor region. The first region provi...
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WO/2024/116448A1 |
The one-side polishing apparatus for a workpiece according to the present invention is further provided with a surface displacement measuring unit capable of measuring displacement of an exposed upper surface, which is a part of the uppe...
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WO/2024/113258A1 |
A fiber grating laser annealing system (100) and method. The laser annealing system (100) comprises a laser annealing device; the laser annealing device comprises: a reference platform (111), a laser (112), a laser divergence and focusin...
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WO/2024/115411A1 |
The invention relates to a carrier (1) for a composite substrate, the carrier (1) comprising an interlayer (3) arranged on a base substrate (2). The interlayer (3) comprises a trapping layer (3a) in contact with the base substrate (2), t...
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WO/2024/118884A1 |
An electrically conductive component includes a substrate and an electrically conductive via that can include an electrically conductive coating bonded to an internal surface of the substrate, a fill that is surrounded by the electricall...
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WO/2024/117005A1 |
A temperature control device (1) comprises: a heat diffusion plate (10) that is a member provided with a first surface (S1) facing a controlled object (CO) and a second surface (S2) parallel to the first surface (S1) and facing the oppos...
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WO/2024/116739A1 |
A nitride semiconductor device (1) comprises: a substrate (10); a drift layer (12) of a first conductivity-type; a first base layer (14) of a second conductivity type; a semiconductor multilayer film (21) that includes a channel; a gate ...
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WO/2024/116928A1 |
The present invention facilitates connection between the wiring and the gate electrode of a charge transfer section. This semiconductor device includes a connection region, a photoelectric conversion section, a charge holding section, an...
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WO/2024/118404A1 |
A computer-implemented method for modeling mandrel tolerance in a design of semiconductor device. The method includes receiving a multiple patterning (MPT) process design kit (PDK) for the semiconductor device. The PDK includes design pa...
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WO/2024/116526A1 |
According to the present invention, good characteristics of a diode are achieved. The present invention provides a semiconductor device which comprises a transistor part that contains a collector region and a diode part that contains a c...
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WO/2024/116894A1 |
This substrate transport method comprises executing, in the stated order: (A) a step for holding a substrate using a transport robot, loading the substrate into a positioning module, and, in response to the transport robot passing throug...
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