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WO/2024/057665A1 |
The present invention addresses the problem of providing: a metallized film that, even when a conductive thin film layer is formed on a resin surface, can be conveyed without breakage, without increasing contact resistance; and a method ...
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WO/2024/056307A1 |
The present invention relates to a cutting blade and to a method for the production thereof. The cutting blade comprises a metal substrate having a first cutting surface and a second cutting surface, which include a cutting edge, wherein...
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WO/2024/055355A1 |
A preparation method for a bismuth oxide film and a reconfigurable photoelectric logic gate. The phenomenon that the open-circuit photovoltage varies non-monotonically over the light intensity is discovered for the first time, and, by us...
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WO/2024/057802A1 |
This film forming apparatus is provided with: an evaporation source which comprises a heatable material container containing a vapor deposition material, and which forms a film on a substrate, while moving; and a control means which cont...
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WO/2024/058643A1 |
In an electronic device comprising a housing, according to various embodiments of the present disclosure, the housing may comprise: an aluminum substrate; a thermal spray coating layer formed on the aluminum substrate and including a fir...
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WO/2024/056624A1 |
Energy refeeding module (15) for a switching circuit (101) with a switching unit (24) configured to be connectable to a DC voltage source (V1) and to deliver at its output (OUT) one or a combination of the following features: iv) high va...
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WO/2024/057671A1 |
Provided are: a sputtering target for oxide semiconductor thin film formation with which can be formed an oxide semiconductor thin film suitable for an active layer with both high mobility and a high band gap; a method for producing the ...
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WO/2024/056313A1 |
A process to deposit nanolaminates on a surface of a flat substrate, the process comprising the following steps : - mounting the substrate (s) in a vacuum process system on a substrate support in a peripheral region (R) of a holder, the ...
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WO/2024/057672A1 |
The present invention enables the achievement of: a sputtering target for the formation of an oxide semiconductor thin film, the sputtering target being capable of forming an oxide semiconductor thin film which is suitable for an active ...
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WO/2024/053192A1 |
The present invention is characterized by comprising: an electrostatic chuck 31 which grabs, by suction, a surface on the opposite side to a film forming-side surface of a substrate S; a substrate support member 41 which supports a perip...
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WO/2024/051599A1 |
A rare earth rotary target and a preparation method therefor. The rare earth rotary target comprises a back tube (1) and at least one rare earth target tube (A) welded outside the back tube (1). The back tube (1) and the rare earth targe...
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WO/2024/053912A1 |
This deposition device includes: a deposition member for providing a deposit; a first rear surface facing the deposition member; a first front surface opposite the first rear surface; and a first inner surface connected to the first rear...
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WO/2024/051083A1 |
The present invention provides a distributor for materials to be deposited and a vacuum deposition device. The distributor comprises a material distribution mechanism and a housing. The material distribution mechanism is arranged at the ...
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WO/2024/051678A1 |
A burnable poison coating. The burnable poison coating is made of at least one of CeB6, SiB6, and YB6, and the density of the burnable poison coating is 70%-97% of the theoretical density of the used material. The present invention furth...
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WO/2024/051598A1 |
Embodiments of the present invention relate to a co-sputtering rare earth rotating target material, and a preparation method and an application method therefor. The co-sputtering rare earth rotating target material comprises two sections...
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WO/2024/053384A1 |
The present invention is a method for producing a base substrate for a single crystal diamond multilayer substrate, the method comprising a step for preparing an initial substrate and a step for forming an intermediate layer comprising a...
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WO/2024/053207A1 |
Provided is a steel sheet for hot pressing that has excellent rapid heating compatibility, that can prevent liquid metal embrittlement cracking, and that has excellent post-hot-pressing coating adhesion. The steel sheet for hot pressing ...
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WO/2024/054353A1 |
A direct patterning deposition mask for OLED deposition is provided where the mask includes a sapphire substrate; and a Silicon Nitride (SiN) membrane. The sapphire substrate thickness may be between 0.7 and 2 mm. The sapphire substrate ...
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WO/2024/053176A1 |
The present invention provides a sputtering target which enables a magnetic layer of a magnetic recording medium to maintain high coercivity, while being capable of improving magnetic separation between magnetic particles. This sputterin...
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WO/2024/050929A1 |
A lanthanide metal-doped IZO target material, a preparation method therefor, and an application thereof. The lanthanide metal-doped IZO target material comprises in terms of mass percentage: 0.5%-10% Ln metal oxide, 60%-87% indium oxide,...
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WO/2024/050696A1 |
A manufacturing method for a composite membrane, and a composite membrane and the use thereof. The composite membrane comprises a polymer base membrane, a bonding layer and a porous polymer membrane, wherein at least one surface of the p...
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WO/2024/052767A1 |
The invention relates to sealing lock (5) for a vacuum deposition facility of a coating on a running metal strip following a running path (P), comprising walls (6) and at least three pairs of rolls, inside said walls (6), wherein - each ...
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WO/2024/051113A1 |
The present application relates to the field of composite film preparation, and discloses a preparation method for a composite PI film, comprising: obtaining a substrate having a PI film formed on the upper surface; forming a chromium bl...
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WO/2024/054435A1 |
Systems and methods for performing direct patterning of a material on a substrate with high fidelity to a desired pattern are presented. A pattern of apertures of a shadow mask is compensated to accommodate a range of propagation angles ...
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WO/2024/050572A1 |
The invention relates to an object, in particular a cutting tool such as a cutting insert, comprising a main body and a coating applied to same, wherein the main body is formed from a hard metal, wherein the main body is formed with a me...
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WO/2024/054441A1 |
A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten l...
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WO/2024/052712A1 |
The invention relates to sealing lock (5) for a vacuum deposition facility of a coating on a running metal strip following a running path (P), comprising walls (6) and at least three pairs of rolls, inside said walls (6), wherein - each ...
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WO/2024/053257A1 |
The present invention provides a material for film formation, wherein: a rare earth fluoride (REF3) and a rare earth oxyfluoride (RE-O-F) are seen by X-ray diffractometry; and the ratio (SREF3/SRE-O-F) of the crystallite size (SREF3) of ...
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WO/2024/052218A1 |
A target (2) for sputtering in mid-frequency AC sputtering processes, or DC sputtering processes, the target (2) comprising a target material layer (21) mainly comprising M-doped LixPOy, wherein x is from 2.5 to 3.5 and wherein y is from...
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WO/2024/050571A1 |
The present invention relates to a method for preparing a substrate coated with an intermediate layer and a diamond layer, comprising the following steps: (a) roughening a surface of the substrate with an etchant, (b) coating the roughen...
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WO/2024/051936A1 |
A closure for pharmaceutical preparations, a method for manufacturing closures for pharmaceutical preparations, and a rotary deposition apparatus for manufacturing closures for pharmaceutical preparations are provided. The closure for ph...
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WO/2024/045517A1 |
A vacuum coating system (100), comprising a housing (1), a switch member (2), a feeding structure (3), and a coating structure (4). A feeding chamber (101) and a coating chamber (102) in communication with each other are formed in the ho...
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WO/2024/045972A1 |
The present disclosure relates to the technical field of vapor deposition, and provides a vapor deposition mask, a vapor deposition apparatus and a vapor deposition method. The vapor deposition mask comprises a mask body and a plurality ...
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WO/2024/048306A1 |
This coated tool has a base material and a hard coating film on the base material. The hard coating film has an A layer provided on the base material and a B layer provided on the A layer. The A layer is a nitride or carbonitride contain...
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WO/2024/050202A1 |
The disclosed and claimed subject matter provides precursors having at least one tethered cyclopentadienyl ligand ("Cp ligand"), at least one amidinate ligand ("Ad ligand") and a lanthanide and/or lanthanide-like transition metal ("M") o...
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WO/2024/048225A1 |
A sputtering target material made of a sintered object of an oxide comprising potassium, sodium, niobium, and oxygen, the sputtering target material having a density of 4.2 g/cm3 or less and a Vickers hardness of 30-200, wherein a plural...
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WO/2024/047999A1 |
A film formation device according to the present invention is characterized by comprising: an electrostatic chuck 31 that absorbs the surface of a substrate S opposite the film formation-side surface thereof; a first support member 41 th...
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WO/2024/048672A1 |
A coated tool according to the present disclosure comprises a substrate, a first coating layer, a second coating layer, and a third coating layer. The first coating layer contains Al, Ti, Cr, and N. The second coating layer includes a fi...
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WO/2024/045748A1 |
Disclosed are a thin film deposition apparatus and a thin film deposition method. The thin film deposition apparatus comprises: a reaction container, which has a vacuum chamber, wherein a support capable of holding a substrate on a holdi...
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WO/2024/048767A1 |
[Problem] To provide a crystal having excellent crystallinity and a laminate structure, and an element, an electronic device, an electronic apparatus, and a system using same. [Solution] Provided is a laminate structure in which an epita...
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WO/2024/049800A1 |
Target assemblies for PVD chambers are provided herein. In some embodiments, a target assembly for a PVD chamber includes: a backing plate; and a target coupled to the backing plate and having a substrate facing surface opposite the back...
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WO/2024/048664A1 |
This molybdenum sputtering target contains molybdenum. The molybdenum sputtering target contains crystal particles which have an average crystal particle diameter of less than 10μm, a relative density of 99.6% or higher, and an oxygen c...
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WO/2024/048261A1 |
An ion bombardment device (1) has: a vacuum chamber (2); a base-material support part (11); a filament (3); a discharge power supply (22); a filament heating power supply (3T); and a magnetic-field generation mechanism (20). The filament...
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WO/2024/048757A1 |
The coated tool according to the present disclosure comprises a base body and a coating layer. The coating layer contains a plurality of crystal grains. The plurality of crystal grains have a plurality of regions provided with mutually d...
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WO/2024/048357A1 |
The present invention is a base substrate for a single crystal diamond multilayer substrate, said base substrate having an initial substrate that is one of a single crystal Si{111} substrate, a single crystal α-Al2O3{0001} substrate, an...
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WO/2024/049771A1 |
Two-dimensional (2D) materials and their heterostructures show a promising path for next generation electronics. Nevertheless, there are challenges with (i) controlling monolayer (ML)-by-ML 2D material growth, (ii) maintaining single-dom...
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WO/2024/048304A1 |
A coated tool comprising a base and a rigid coating film formed thereon. The rigid coating film is a nitride or carbonitride which contains Al and Cr in amounts of 70-90 atm.% and 10-30 atm.%, respectively, with respect to the total amou...
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WO/2024/048954A1 |
A mask comprises: a body which has a length extended in a first direction, and in which defined are a plurality of first cell regions arranged in the first direction, each including a plurality of first holes, and a plurality of second c...
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WO/2024/047995A1 |
This semiconductor device comprises: an amorphous substrate having an insulating surface; an orientation pattern located on the amorphous substrate; and a semiconductor pattern including gallium nitride and located on the upper surface o...
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WO/2024/048768A1 |
[Problem] To provide: a laminated structure with excellent bending strength; an element; an electronic device; an electronic apparatus; and a system. [Solution] This laminated structure is constituted of at least a first layer and a seco...
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