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WO/2012/021025A2 |
The present invention relates to a texture-etchant composition for a crystalline silicon wafer to form a micro-pyramidal structure that can maximize the light absorption on the surface of the crystalline silicon, and a method for etching...
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WO/2012/015088A1 |
The present invention relates to method for producing an array substrate for a liquid crystal display device, wherein an etching solution composition is used which comprises, with respect to the entire weight of the composition, a) from ...
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WO/2012/015089A1 |
The present invention relates to preparation method for an array substrate for the use in a liquid crystal display device, using an etchant composition comprising: a) 5-25 wt% of hydrogen peroxide (H2O2); b) 0.1-5 wt% of an organic acid;...
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WO/2012/008282A1 |
A dry etching agent which comprises (A) 1,3,3,3- tetrafluoropropene, (B) at least one additive gas selected from the group consisting of H2, O2, CO, O3, CO2, COCl2, CF3OF, COF2, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3...
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WO/2012/001616A2 |
A packet based switched multimedia network which consolidates networking of high throughput, time sensitive data, and control streams, with Ethernet data networking over home span. The multimedia network may support in parallel, over the...
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WO/2011/162278A1 |
The present invention comprises: a gas for plasma reactions that is characterized by containing 1,1,2,4,4,-pentafluoro-1,3-butadiene; a dry etching method in which the gas for plasma reactions is supplied to a processing vessel, and in t...
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WO/2011/159749A1 |
This invention provides an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium. Also provided is a method of making a photovoltaic cell that uses...
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WO/2011/157335A1 |
The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and silicon surfaces and which allow to prepare s...
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WO/2011/154875A1 |
An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-so...
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WO/2011/146206A1 |
Improved wet chemical solutions for texturing of silicon substrates, particularly for use as solar cells or photovoltaic devices are described. The solutions of the present invention provide more consistent and uniform texturing over the...
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WO/2011/135435A1 |
Product (56) obtainable by mixing (10; 20) at least one polyethylene glycol with a base to form a single-phase mixture (52), heating (12; 22) of the single-phase mixture (52) to a temperature of 80°C and allowing the single-phase mixtur...
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WO/2011/125603A1 |
Disclosed are: an ink for conductive polymer etching, which has excellent etching ability for conductive polymers and provides a pattern with high accuracy; and a method for patterning a conductive polymer using the ink for conductive po...
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WO/2011/105129A1 |
Disclosed is a copper oxide etchant, which, when using a copper oxide as a thermal reaction resist material and exposed with a laser, is capable of selectively etching exposed/unexposed areas; also disclosed is an etching method using th...
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WO/2011/102268A1 |
Disclosed is a method for producing monofluoro methane, which involves at least a pyrolysis step in which a 1-methoxy-1,1,2,2-tetrafluoro ethane is pyrolyzed by bringing same into contact with a catalyst, and a step for collecting monofl...
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WO/2011/098271A1 |
The invention relates to the field of the wet chemical treatment of silicon substrates. The invention in particular relates to a method for determining the concentration of nitric acid in aqueous process solutions as they are used for th...
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WO/2011/093263A1 |
Provided is a dry etching agent containing fluorinated propyne represented by the chemical formula CF3C≡CX (where X is H, F, Cl, Br, I, CH3, CFH2, or CF2H), and either (B) at least one gas selected from the group consisting of O2, O3, ...
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WO/2011/078446A1 |
Provided are a polysilazane treating solvent including one or more compound(s) selected from toluene and heptane and a (Cl2-C16)isoparaffin mixture, and a method for treating polysilazane using the same. More specifically, provided are a...
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WO/2011/019222A9 |
The present invention relates to a wet etchant composition to a multilayer film comprising a copper-based metal layer and a titanium-based metal layer. The etchant composition of the present invention provides an excellent etching profil...
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WO/2011/055915A2 |
The present invention relates to an etchant composition for etching a triple film constituted by an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, wherein the etchant compositi...
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WO/2011/052941A2 |
Disclosed is an etching composition for texturing a crystalline silicon-based wafer, including (A) 0.1 ~ 20 wt% of at least one alkaline compound, (B) 0.1 ~ 50 wt% of at least one cyclic compound having a boiling point of 100 ~ 400°C, a...
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WO/2011/052989A2 |
The present invention relates to an etching solution composition for triple films formed with In, Al, and Mo, and said composition comprises, with respect to the total weight of the composition: phosphoric acid 45 to 70 weight%; nitric a...
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WO/2011/052987A2 |
The present invention relates to an etching solution composition for multiple films or double films formed with metal films including copper and metal films including molybdenum, and said composition comprises, with respect to the total ...
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WO/2011/052909A2 |
The present invention relates to an etchant composition for etching a triple film consisting of an indium-based metal film, an aluminum-lanthanum-based alloy film, and a titanium-based metal film, wherein the etchant composition comprise...
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WO/2011/032880A1 |
An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% b...
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WO/2011/032629A1 |
The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor ...
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WO/2011/028037A2 |
Provided is an etchant of a metal film including an organic chelating agent with an amino group and a carboxyl group; peroxides; oxidants fluorine compounds; glycols; additives and deionized water. Provided is a composition of an etchant...
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WO/2011/020632A1 |
The invention relates to a method for etching of silicon surfaces with the following steps: Furnishing an aqueous alkaline hydrocolloid etching solution containing at least one hydrocolloid, at a temperature of 50°C to 95°C, bringing t...
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WO/2011/019209A2 |
The present invention provides an etchant composition for a metal film comprising at least one film selected from an indium-based transparent conductive film, an aluminum-based metal film and a titanium-based metal film, used for the int...
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WO/2011/009764A1 |
Disclosed is an etchant composition for titanium-aluminum complex metal layer comprising, on the basis of the total weight of the etchant composition, about 0.1 wt% to about 5 wt% of at least one quaternary ammonium compound containing f...
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WO/2011/010877A2 |
The present invention relates to an etchant composition for the formation of a metal line. The etchant composition can wet-etch, in a batch, a single-layer film formed of one or more metals selected from a group consisting of titanium, t...
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WO/2011/002801A1 |
Disclosed is a liquid cleaning mixture used to remove DMSO and other solvents and compounds that may build up on the surface of dielectric barrier material in a plasma cleaning device, where the DMSO, solvent and compounds have become co...
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WO/2010/143794A1 |
The present invention provides an etching paste having a doping function. The etching paste etches a thin film on a silicon wafer and comprises a) an n- or p-dopable dopant; b) a binder; and c) a solvent. The etching paste having a dopin...
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WO/2010/139390A1 |
The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of ...
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WO/2010/117673A1 |
A glass article having an anti-glare surface. The anti-glare surface has a distinctness-of-reflected image of less than 95, and a haze of less than or equal to 50%. In one embodiment, the glass article further includes a smudge-resistant...
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WO/2010/113744A1 |
Disclosed is an agent for removing a conductive film, which contains: an acid having a boiling point of not less than 80˚C, a base having a boiling point of not less than 80˚C, or a compound that generates an acid or a base by the acti...
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WO/2010/115075A1 |
The present invention provides an etchant composition comprising A) high strength potassium monopersulfate providing from about 0.025% to about 0.8% by weight of active oxygen; B) from about 0.01% to about 30% by weight of the compositio...
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WO/2010/099982A1 |
The present invention relates to an etching composition, in particular for silicon materials, a method for characterizing defects on surfaces of such materials and a process of treating such surfaces with the etching composition, wherein...
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WO/2010/086745A1 |
Lanthanum oxide or lanthanoid-containing oxides are etched from substrates intended for microelectronic devices using a buffered halide solution, the active ingredient preferably comprising, consisting or consisting essentially of a salt...
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WO/2010/084213A1 |
Means, process and device for superficial treatment of surfaces of parts of gold or alloys thereof. Electrolytic means for electrochemical surface treatment of articles of gold and of gold alloys constituting the anode of a polishing pro...
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WO/2010/056051A2 |
The present invention relates to etching solution compositions for transparent conductive film formed into fine pattern during manufacture of thin film transistors for flat panel liquid crystal displays. The compositions of the present i...
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WO/2010/052545A1 |
Product (64) obtained by mixing (10) at least one polyethylene glycol with a base, allowing resting (12) of the mixture (52) in ambient air and at a temperature of approximately 25°C to form two phases (56, 58) and separation (16) of th...
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WO/2010/030499A1 |
The present invention provides an aqueous CMP slurry composition that includes abrasive particles and from about 0.01 % to the limit of solubility in water of a compound according to Formula (I): wherein only one of R1, R2, R3, R4 and R5...
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WO/2009/111719A9 |
Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.
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WO/2009/145984A1 |
Post-contact opening etchants for post-etch cleans and methods for fabricating such etchants are provided. In an exemplary embodiment, a post-contact opening etchant comprises anhydrous hydrogen fluoride and a fluoride-dissociation modul...
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WO/2009/137676A2 |
Systems and methods of staining a surface. An organic salt is used in combination with a metal salt to provide a decorative stain that can be used to stain any of a variety of pH basic surfaces, including concrete. In at least some imple...
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WO/2009/125099A2 |
Process for preparing a glass etching solution that is free from ammonium ions and from difluoride ions, that uses hydrofluoric acid and a composition that is free from ammonium ions and from difluoride ions comprising from 30% to 100%, ...
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WO/2009/104976A1 |
The invention subject-matter is a method of manufacturing a patterned glass intended especially for building solar collectors and batteries and glasshouses, which method consists in that on one surface of a typical pane of glass being 3-...
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WO/2009/073596A2 |
A removal composition and process for removing polymeric protective coating(s) from a microelectronic device having said coatings thereon. The removal composition removes the polymeric protective coating(s) from the device in a single st...
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WO/2009/072810A2 |
It relates to an etchant composition for glass substrates and more particularly, to an etchant composition including 10-45wt% of an inorganic salt including fluorine to the total weight of the composition; 1-10wt% of NH4HF2; 1-10wt% of a...
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WO/2009/061487A1 |
Tetrafluoroboric acid and an organic nitrogenous base, related compounds and compositions, as can be used in conjunction with various methods of cleaning and/or the treatment of substrate surfaces.
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