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WO/2014/176001A1 |
A method of regenerating an etch solution comprising a metastable complex of manganese(III) ions in a strong acid is described in which at least a portion of the manganese(III) ions in the metastable complex have been destabilized, causi...
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WO/2014/175071A1 |
The purpose of the present invention is to provide a liquid composition used in etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate...
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WO/2014/138064A1 |
Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device havi...
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WO/2014/094103A1 |
The invention relates to the use of thionyl chloride and related materials for dry etching of internal surfaces of metal-organic vapour phase epitaxy (MOVPE) reactors to remove deposits. The method is also useful for the dry etching of p...
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WO/2014/089941A1 |
Provided is an etchant, which is formed by the reaction of sulphuric acid and ammonium persulfate, the mass concentration of ammonium persulfate being 1-25%. The sulphuric acid is a sulphuric acid with a mass concentration of 98%. Also p...
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WO/2014/087004A1 |
The present invention relates to a process for metallizing nonconductive plastics using an etching solution free of hexavalent chromium. The etching solution is based on an sulphuric acidic solution comprising a source of chlorate ions a...
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WO/2014/070546A1 |
A foam acid glass etching media including a solvent; a source of fluorine; and a nonionic surfactant. The foam acid is in the form of a colloidal dispersion with a gas dispersed in a continuous liquid phase. The media is useful in etchin...
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WO/2014/061245A1 |
An etching material which contains at least one boron compound that is selected from among Lewis acids that contain, in the structures thereof, a boron atom and a halogen atom that is bonded to the boron atom, salts of the Lewis acids, a...
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WO/2014/032143A1 |
The present invention provides a chemical surface cleaning method for textured crystalline silicon wafers, obtained by modifying a standard chemical cleaning method, RCA. In the method according to the invention, chemical cleaning compri...
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WO/2014/022004A1 |
Sacrificial-metal pigments are coated with an effective amount of at least one metal oxide or a combination of metal oxides such as a chromium-zirconium oxide, and the process for preparing said coated pigments and combination thereof wi...
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WO/2014/012809A1 |
The invention relates to a glass sheet, one of the sides of which comprises a frosted surface, wherein the texture of said frosted surface is defined by: (i) a value Ra greater than 1.5 μm and less than 4 μm; and (ii) a value RSm great...
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WO/2014/014420A1 |
A method for solar cell fabrication is provided. The method includes patterning etch-impeding material formed on an emitter surface of the silicon wafer solar cell to form an etch-impeding mask. The method also includes etching-back the ...
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WO/2014/004755A1 |
This invention is a process for reducing the electrostatic potential of a perfluoroelastomer article wherein a perfluoroelastomer article is treated with a sodium naphthalide solution, washed and treated with ammonium hydroxide.
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WO/2013/182265A1 |
The improved method for the etching of transparent conductive oxide layers placed on flexible polymer substrates, hard substrates like glass or on silicon wafers comprises the use of new etching pastes, which are activated by irradiation.
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WO/2013/181123A1 |
The disclosure is directed to a method for controlling the sludge that is generated during the wet acid etching of glass articles. The four Factors that need to be controlled are (i) the dissolved glass level A; (ii) the HF concentration...
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WO/2013/169208A1 |
A method for solar cell fabrication is provided. The method includes etching a doped surface of a silicon wafer solar cell using a solution including potassium hydroxide (KOH) and sodium hypochlorite (NaOCl). Alternatively the solution c...
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WO/2013/169884A1 |
A glass etching medium and a method for etching the surface of a glass sheet to modify surface flaw characteristics without degrading the optical quality of the sheet surface, wherein the etching medium is a thickened aqueous acidic fluo...
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WO/2013/163524A1 |
A strengthened glass sheet or article having an edge profile that provides improved edge strength, particularly when the strengthened glass sheet is subjected to a four point bend test, and a method of making a glass sheet having such an...
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WO/2013/133668A1 |
Disclosed are an electrode substrate, an input device and display device comprising same, and a production method therefor. The electrode substrate comprises: an insulating substrate; and an electrode layer disposed on the insulating sub...
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WO/2013/100644A1 |
The present invention relates to an etching-solution composition, and the etching-solution composition according to one embodiment of the present invention comprises 3-20 weight% hydrofluoric acid, 5-40 weight% nitric acid, 10-60 weight%...
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WO/2013/089338A1 |
The present invention relates to a texture etching solution composition of a crystalline silicon wafer and to a texture etching method, and more particularly, to a texture etching solution composition containing a polycarboxylic acid-bas...
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WO/2013/089641A1 |
The present invention provides a texturing chemical (100) for forming pyramidal textures on a mono-crystalline silicon substrate to produce a light trapping layer within a silicon solar cell. The texturing chemical (100) contains a salic...
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WO/2013/084083A2 |
A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 perc...
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WO/2013/078038A1 |
Glass-forming molds (10) comprising titanium aluminum nitride glass release coatings (14) are reconditioned with aqueous mineral acid solutions comprising fluoride and phosphate ions to provide molds with restored glass release character...
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WO/2013/069873A1 |
Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2,O8,an azole-based compound, a water-soluble amine compound, a sulfonic acid...
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WO/2013/066058A2 |
The present invention relates to a magnetic substance layer and to a composition for removing the residue of a magnetic substance layer, which comprises: (a) at least one of sulfonic acid, an aliphatic amine or an aromatic amine; and (b)...
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WO/2013/058477A2 |
The present invention relates to a texture etching fluid composition and to a texture etching method for crystalline silicon wafers, and, more specifically, relates to a texture etching fluid composition and a texture etching method for ...
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WO/2013/055290A1 |
The present invention provides an alkaline solution (100) for forming pyramidal textures on a mono-crystalline silicon substrate to produce a light trapping layer within a silicon solar cell. The alkaline texturing solution (100) contain...
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WO/2013/002502A9 |
The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method thereof, and more specifically to a texture etchant composition for a crystalline silicon wafer, which is capable...
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WO/2013/010612A1 |
The invention relates to compositions which are particularly well suited to etching and structuring transparent, conductive antireflection coatings and corresponding stacked layers, which are preferably contained in touch-sensitive monit...
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WO/2013/002283A1 |
Provided is an etching solution for copper oxide. In a case where a copper oxide is used as a thermal reaction type resist material and exposed to a laser, the etching solution can etch the resulting laser-exposed resist material selecti...
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WO/2012/177017A2 |
Disclosed are a metal film etchant liquid composition including a copper used for a semiconductor device, and an etching method using same. The metal film etchant liquid composition of the present invention comprises: a fluoboric acid; o...
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WO/2012/169722A1 |
The present invention relates to a texture etching solution composition and a texture etching method for a crystalline silicon wafer, and more specifically, to a texture etching solution composition and a texture etching method for a cry...
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WO/2012/169721A1 |
The present invention relates to a texture etching solution composition and a texture etching method for a crystalline silicon wafer, and more specifically, to a texture etching method and a composition for a texture etching solution for...
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WO/2012/154712A1 |
For solar cell fabrication, the addition of precursors to printable media to assist etching through silicon nitride or silicon oxide layer thus affording contact with the substance underneath the nitride or oxide layer. The etching mecha...
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WO/2012/144733A2 |
The present invention relates to a texture-etchant composition for a crystalline silicon wafer, and to a texture-etching method. More particularly, the present invention relates to a texture-etchant composition for a crystalline silicon ...
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WO/2012/142987A1 |
The invention relates to a method for producing a textured silicon substrate, in particular a silicon wafer, comprising the following steps: a) applying an aqueous catalyst solution containing metal ions to the silicon substrate on one s...
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WO/2012/139548A1 |
The invention relates to an etching solution for structuring a zinc oxide layer, which comprises a protic acid and at least one Fe(III) salt. It further relates to a process for structuring a zinc oxide layer, which is characterized in t...
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WO/2012/133500A1 |
[Problem] To provide a composition containing monofluoromethane and trifluoromethane that can be an azeotropic composition that can be regarded as a homogeneous substance, or an azeotrope-like composition in which the composition in the ...
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WO/2012/125401A1 |
This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, a...
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WO/2012/091395A9 |
The present invention relates to a composition for a texture-etching solution and to a texture-etching method for crystalline silicon wafers. More particularly, the present invention relates to a composition for a texture-etching solutio...
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WO/2012/101545A1 |
The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension <25 mN/m, the said surfactants A containing at least three short-chain perfluorinated groups Rf selected from the group consisting of ...
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WO/2012/081768A1 |
The etching paste of the present invention comprises: (a) an organic binder; (b) phosphoric acid; (c) a nitrogen containing compound; and (d) a solvent, and the (c) nitrogen containing compound is one or more such compound selected from ...
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WO/2012/083082A1 |
The present invention relates to a novel printable paste composition and its use in etching conductive films formed by a plurality of interconnecting silver nano-wires. After etching, the conductive film has a pattern of conductive and n...
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WO/2012/061010A2 |
Provided is a composition for etching polymeric materials comprising an aqueous solution including an alkali metal salt and glycine.
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WO/2012/057467A2 |
Provided are a copper-containing etchant composition for a metal layer, which is used for semiconductor devices, and an etching method using same. An etchant composition including fluoboric acid enables copper-containing multilayers to b...
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WO/2012/048899A1 |
The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen p...
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WO/2012/051380A2 |
Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and ac...
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WO/2012/029000A1 |
An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is sur...
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WO/2012/022476A1 |
A process for chemical texturing a surface of a multicrystalline silicon wafer to be used in the manufacture of solar cells, the process by contacting the surface of said multicrystalline silicon wafer with a composition for a time and a...
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