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WO/2022/207559A1 |
Disclosed is a method for pickling polyamide, comprising steps a) bringing the polyamide in contact with a pickling solution containing: - a mixture of at least two inorganic acids; - MHF2, where M is an alkali ion or an ammonium ion; - ...
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WO/2022/194973A1 |
[Problem] To provide a substrate treating solution. [Means for Solution] The substrate treating solution comprises a polymer (A) and a solvent (B), wherein the solvent (B) comprises water (B-1); the polymer (A) comprises an acidic polyme...
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WO/2022/191429A1 |
A method for etching a multi-laminate of silicon-containing films, according to the present invention, comprises the steps of: introducing, into a process chamber of an etching apparatus, a substrate having a multi-laminate which is form...
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WO/2022/180197A1 |
The present invention relates to a method for etching at least one surface of a plastic sub- strate, the method comprising steps (A) to (C), wherein step (B) comprises a contacting with a pre-treatment composition comprising one or more ...
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WO/2022/145624A1 |
The present invention relates to an ultrathin glass manufacturing method and ultrathin glass manufactured by the method, the method comprising the steps of: (a) cutting original glass by cell unit to prepare a plurality of cells; (b) phy...
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WO/2022/146846A1 |
Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilico...
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WO/2022/146697A1 |
Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant i...
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WO/2022/140081A1 |
The present disclosure provides a composition that can polish substrates containing multiple metals, for example cobalt and tungsten. The compositions can provide favorable removable rates of those metals while mitigating corrosion, and ...
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WO/2022/128844A1 |
The present invention relates to a composition including at least one sulfosalicylic acid having structure (I), or its hydrate, and mixtures thereof and a sulfosalicylic acid having structure (I), or its hydrate, a primary solvent select...
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WO/2022/125388A1 |
Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organi...
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WO/2022/074860A1 |
This etching processing system 1 comprises an etching tank 2 in which an etching liquid 3 is received and a heater 4 arranged within the etching tank 2. The etching tank 2 has provided thereto a circulation pipe 5 for forming a flow whic...
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WO/2022/066656A1 |
Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and p...
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WO/2022/055814A1 |
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
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WO/2022/036246A1 |
Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the d...
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WO/2022/030765A1 |
The present invention pertains to: an etching composition capable of adjusting the etching selectivity of a titanium nitride film with respect to a tungsten film; and an etching method using same. The etching composition contains an inor...
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WO/2022/030718A1 |
The present invention relates to an etching gas mixture and particularly to etching gases which, as an etching gas combination for obtaining an etched cross section having a high aspect ratio, exhibit superior performance in terms of hig...
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WO/2022/026739A1 |
Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a com...
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WO/2022/016742A1 |
A back polishing method of a PERC battery, the method comprising: (S1), a pre-treatment of a silicon wafer before polishing; (S2), a back polishing treatment of the silicon wafer, which involves: placing the silicon wafer into a mixed so...
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WO/2021/248225A1 |
A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: - hydrofluoric acid in solution; - a weak base; and - an alkanolamine; said process comprising the steps o...
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WO/2021/183581A1 |
Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.
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WO/2021/178347A1 |
Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion sou...
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WO/2021/173704A1 |
Described are filter materials possessing polycarboxyl ligands, such as iminodiacetic acid, which are highly effective for filtering metals or metal ions from fluids. The filter materials can be particularly useful to filter various flui...
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WO/2021/166571A1 |
The present invention addresses the problem of providing a treatment method whereby the flatness of an object of interest having a metal layer can become superior when the method is applied to the object of interest. The present inventio...
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WO/2021/167787A1 |
A method of treating a glass substrate including heating the glass substrate, directing a first flow of air through a first plurality of apertures disposed in an aperture plate to a first side of the heated glass substrate, and exposing ...
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WO/2021/162978A1 |
A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a s...
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WO/2021/162980A1 |
A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a su...
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WO/2021/156531A1 |
A solid electrolyte for the dry electropolishing of metals, comprising at least one type of active ion exchange resin particles charged with an acid solution that generates chemical activity and electrical activity, at least one type of ...
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WO/2021/146075A1 |
Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etcha...
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WO/2021/112932A2 |
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the...
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WO/2021/110275A1 |
A method of selectively etching a metal component (12) of a workpiece further comprising a ferromagnetic insulator component (14). The method comprises contacting the metal component with an etchant solution. The etchant solution compris...
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WO/2021/085837A1 |
Provided are: a composition for the wet etching of polysilicon, the composition comprising a phosphorus-containing acid and an annular alcohol; and a method for manufacturing a semiconductor device using same.
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WO/2021/076676A1 |
A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes form...
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WO/2021/075668A1 |
The present invention relates to a thermoplastic resin composition, a method for preparing same, a molded product comprising same, and a method for manufacturing a molded product and, more specifically, to a thermoplastic resin compositi...
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WO/2021/072091A1 |
The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve t...
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WO/2021/067150A1 |
The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etch...
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WO/2021/054567A1 |
A plasma etching method of the present invention comprises: a first step of providing, to a plasma chamber in which an object to be etched is provided, a mixed gas comprising argon gas and vaporized 1,1,2,2-tetrafluoroethly-2,2,2-trifluo...
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WO/2021/050333A1 |
This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.
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WO/2021/041826A1 |
Compositions and methods for etching an implantable device having a cobalt chrome surface are disclosed. The compositions generally include at least two mineral acids, iron (Fe), and certain component metals of the cobalt chrome to be et...
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WO/2021/033884A1 |
A plasma etching method of the present invention comprises: a first step of providing, to a plasma chamber in which an object to be etched is provided, a mixed gas comprising argon gas and any one selected from vaporized heptafluoroisopr...
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WO/2021/028214A1 |
The present disclosure provides a method to fabricate high aspect ratio patterns in a semiconductor substrate that are elements of photonic devices by using a continuous metal mesh and etching in presence of air in a continuous flow and ...
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WO/2021/015632A1 |
The present invention relates to a composition for cleaning vehicle bodywork, rims, motors and accessories and cleaning away scaling that forms on those parts, without damaging the paintwork, which is characterised in that, according to ...
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WO/2021/003552A1 |
The present invention discloses a novel aqueous composition for use in removing mixed sulfate scale from a surface contaminated with such, said composition comprising: a chelating agent and a counterion component selected from the group ...
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WO/2021/004759A1 |
The invention relates to a composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination the...
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WO/2020/252272A1 |
Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at...
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WO/2020/251800A1 |
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing one or both of titanium nitride (TiN) and cobalt (Co) from a semiconductor substrate without substantially forming a cobalt oxide ...
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WO/2020/235776A1 |
Provided is a cooking container for induction heating, wherein the cooking container is made of materials in a quadruple or triple clad structure so as to be used in an induction heating device as well as a general heating device. Prefer...
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WO/2020/232042A1 |
Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally...
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WO/2020/226325A1 |
The present application relates to a tetrapod-shaped quantum dot including a plurality of arms, wherein the plurality of arms have different growth rates according to the crystal directions thereof.
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WO/2020/218814A1 |
The present invention relates to an etching device and an etching method therefor, wherein the etching device comprises: an etching chamber in which a target is placed; a first nozzle inserted into the etching chamber at a first angle an...
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WO/2020/218815A1 |
The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing ...
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