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JP7348535B2 |
The present disclosure addresses the problem of producing a hydrogenated alkene by way of hydrogen substitution. This alkene manufacturing method includes a step in which a hydrogenation reaction is conducted in the presence of an activa...
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JP7343796B2 |
A fluoroalkyne compound can be efficiently synthesized from a fluoroalkane compound by a method for producing a fluoroalkyne compound represented by formula (1): R1C≡CR2 (1)where
in R1 and R2 are th...
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JP7341880B2 |
To provide an etching method with which both a thermoplastic polyimide resin and a polyimide resin can be etched, which brings about no large deviation between an end part of the thermoplastic polyimide resin and that of the polyimide re...
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JP7341953B2 |
An object of the present disclosure is to provide a chlorinated alkane at a high conversion rate (yield) and with high selectivity. Provided is a method for producing an alkane, the method including the step of subjecting an alkene to a ...
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JP2023109854A |
To provide compositions useful particularly in the etching of 3D NAND structures.A composition comprises: phosphoric acid; at least one silane compound selected from alkylamino alkoxysilanes and alkylamino hydroxyl silanes; a solvent com...
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JP2023101962A |
To provide an etching method of a laminate having a thermoplastic polyimide resin layer on a base material, capable of forming an excellent opening shape even when a film thickness of the thermoplastic polyimide resin layer is thick.An e...
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JP7295451B2 |
The present invention makes it possible to efficiently produce a perfluoroalkyl group-containing aromatic compound by reacting, in a solvent, a compound represented by general formula (3): R6Cu (3) [where R6 indicates a perfluoroalkyl gr...
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JP2022144653A |
To form a pattern which is difficult to manufacture a mold and has a narrow pitch into a thermoplastic resin.An etchant for a thermoplastic resin contains 5-40 mass% of alkanolamine and 15-45 mass% of an alkali metal hydroxide, wherein t...
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JP7096799B2 |
To provide an etchant which can increase the ratio of an etching rate of a silicon nitride film to a silicon oxide film according to an embodiment.The disclosure in an embodiment relates to an etchant for a process of removing a silicon ...
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JP7096800B2 |
To provide an etchant which can achieve a good ratio of an etching rate of a silicon nitride film to a silicon oxide film, and which can suppress the clogging of a filter in use of an etchant while circulating the etchant according to an...
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JP7096801B2 |
To provide an etchant which can suppress the precipitation and deposition of silica produced in an etching process on a silicon oxide film according to an embodiment.The disclosure in an embodiment relates to an etchant for a process of ...
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JP7093407B2 |
An aqueous composition for use in activating surface of polymers.
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JP2022075061A |
To provide a film removing method for removing a tin dioxide transparent conductive film that can remove (patterning treatment) a tin dioxide transparent conductive film excellent in chemical resistance in a sufficiently short time as re...
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JP7069473B2 |
To provide a method for producing a high purity boron trichloride from boron trichloride that may contain chloride.The method comprises bringing a boron trichloride that may contain chlorine, and a mixture of boron carbide and activated ...
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JP2022059616A |
To produce a chlorinated alkane at a high conversion rate (yield) and with high selectivity.This method for producing an alkane includes a step for subjecting an alkane to a chlorination reaction. The chlorination reaction step is carrie...
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JP2022008044A |
To improve the life of an etchant by suppressing, when etching a polyimide resin, generation of precipitates which deposit when an etchant is kept using repeatedly and solidification of the etchant as a whole due to coagulation of the pr...
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JP6989770B2 |
The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching m...
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JP6988977B1 |
To clean and modify the surface of various materials, particularly to perform plating treatment on the surface of a resin material, without using regulated substances such as hexavalent chromic acid and permanganic acid which have a grea...
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JP6953484B2 |
To provide a plating pretreatment method for a Cr and Mn-free ABS resin surface in which plating in sufficient contact with the ABS resin surface can be formed.A treatment apparatus 1 has a treatment tank 2 provided with a constant-tempe...
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JP6947783B2 |
To provide a plating pretreatment method for a Cr and Mn-free ABS resin surface in which plating in sufficient contact with the ABS resin surface can be formed.A treatment apparatus 1 has a treatment tank 2 provided with a constant-tempe...
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JP2021155445A |
To produce chlorinated alkane with a high conversion ratio (yield) and high selectivity.An alkane production method includes a step in which alkene is chlorinated. The chlorination step is performed by light irradiation using light havin...
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JP2021086943A |
To provide etching liquid capable of improving the ratio of the etching rate of a silicon nitride film to a silicon oxide film.Etching liquid according to an embodiment of the present invention for a step of removing a silicon nitride fi...
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JP6842816B2 |
To provide a scale peelable composition which improves peelability of scale while keeping low corrosion resistance of a surface of a steel plate compared to the prior art.A scale peelable composition for peeling scale is obtained by blen...
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JP6805397B1 |
An object of the present invention is to provide an etching solution for a liquid crystal polymer and an etching method for the liquid crystal polymer, in which the shape of the liquid crystal polymer after etching is close to the design...
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JP6788177B2 |
The present invention is a dry etching method which is characterized by selectively etching silicon nitride to a photoresist, silicon oxide and silicon with use of a plasma gas that is obtained by changing a dry etching agent into a plas...
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JP6788176B2 |
What is disclosed is a dry etching gas containing 1,3,3,3-tetrafluoropropene, wherein 1,3,3,3-tetrafluoropropene has purity of 99.5 mass % or more, and a total of concentration of each mixed metal component of Fe, Ni, Cr, Al, and Mo is 5...
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JP6774589B1 |
Provided is an etching solution useful for a resin composition containing an alkali-insoluble resin, an organic filler of 20 to 40% by mass, and an inorganic filler of 30 to 50% by mass. At least one selected from alcohol compounds and c...
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JP2020526628A |
Methods and systems for removing water from a manganese-based etching solution bath are disclosed. Water is removed from the manganese-based etching solution bath by transferring it to a vacuum evaporator to process a part of the mangane...
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JP2020526638A |
A manganese etching solution that collects the process solution used to clean or neutralize the non-conductive substrate after etching the substrate and evaporates it to obtain a concentrated process solution that is returned to the mang...
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JP6723152B2 |
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having s...
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JP6674075B1 |
In the present invention, in an etching solution of a resin composition containing an alkali-insoluble resin and an inorganic filler of 50 to 80% by mass, the etching solution contains 15 to 45% by mass of an alkali metal hydroxide as a ...
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JP2020045574A |
To provide a stable acid etching solution easily prepared, having a long life, capable of suppressing the consumption of permanganate to the minimum and for metallizing a non-conductive plastic surface.The etching solution comprises: (i)...
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JP2020506870A |
The method of making a glass article comprises applying an etching cream to the edge surface of the article. The application of the etching cream can reduce the particle density on the edge surface to less than about 200 particles per 0....
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JP2020033492A |
To provide an etching liquid capable of removing a resin composition layer with less load on human body or environment in a processing for removing the resin composition layer containing a resin composition in a process for removing the ...
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JP2020024936A |
To provide an electrode film in which a transparent conductive material remains between pattern pieces.An electrode film has a crystalline transparent conductive layer on a first main surface of a flexible base material, in which in a gr...
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JP6622712B2 |
The present invention relates to a composition of an etching solution and a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic ...
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JP6581398B2 |
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JP2019134168A |
To provide compositions useful for selectively removing titanium nitride and/or photoresist etch residue material, from a microelectronic device having the same thereon, relative to metal conducting material, e.g., cobalt, ruthenium, and...
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JP6551563B1 |
To provide a plating pretreatment method for a chromium- and manganese-free ABS-based resin surface, which can form a plating sufficiently adhered to the ABS-based resin surface. An ABS resin hydrophilization treatment device 1 has a tre...
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JP6522957B2 |
To provide an etchant suitable for forming a minute pattern of an original mold excellent in mold release property, and an etching method using the same.The etchant is an etchant of copper oxide for selectively removing copper oxide of a...
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JP6485357B2 |
The present invention provides an etching liquid which has an etching rate that is suitable for etching an oxide consisting essentially of zinc, tin and oxygen, which exhibits little change in etching rate upon dissolution of the oxide, ...
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JP6477832B1 |
To provide a method for hydrophilizing a polypropylene resin capable of forming plating sufficiently in close contact with the surface of the polypropylene resin. A processing apparatus 1 has a processing tank 2, an electrolytic cell 6 p...
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JP6477831B1 |
To provide a method for hydrophilizing a PPS resin capable of forming a plating sufficiently adhered to a surface of the PPS resin. A processing apparatus 1 comprises a processing tank 2, an electrolytic cell 6 provided with a diamond el...
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JP6465224B1 |
To provide a method for obtaining a perfluoroalkadiene compound in a high yield. General formula (1): CF2= CF-(CF2)n-4-CF = CF2 (1) [In the formula, n indicates an integer greater than or equal to 4. ] It is a method for producing a perf...
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JP6402725B2 |
Provided is a liquid etching composition that etches an oxide comprising indium, zinc, tin and oxygen at a preferable etching rate, without the etching rate being changed much along with the dissolution of the oxide, and with no substant...
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JPWO2017056285A1 |
An etching solution for a resin molded body, which is an acidic etching solution containing permanganate ions and further contains a pH buffer, an etching method for a resin molded body using the same, and a resin molded body. Provided i...
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JP6369460B2 |
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JP6353546B2 |
Provided are an active-light-sensitive or radiation-sensitive resin composition in which the sensitivity is excellent, and an active-light-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an...
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JP6298137B2 |
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JP6288213B1 |
To provide a method for treating a Cr-free plastic surface, which can form a plating sufficiently adhered to the plastic surface. A processing device 1 has a processing tank 2 provided with a constant temperature heater 3 on the outer pe...
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