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JP4464125B2 |
A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of s...
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JP4456330B2 |
A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. met...
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JP4455833B2 |
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JP4448787B2 |
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JP4435777B2 |
A liquid crystalline material in the form of an anisotropic gel containing a polymerized monotropic or enantiotropic liquid crystalline material and a low-molecular weight liquid crystalline material, wherein the polymerized material a) ...
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JP4434632B2 |
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JP4428995B2 |
The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudat...
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JP4424039B2 |
An alkali etchant for controlling surface roughness of a semiconductor wafer, which is a sodium hydroxide solution or a potassium hydroxide solution having a weight concentration of 55 wt% to 70 wt%.
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JP4423194B2 |
A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines....
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JP4411623B2 |
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JP2010021137A |
To provide a patterning method for a transparent conductive layer which is excellent on flexibility in comparison with a conventional spattering ITO layer and uses conductive oxide particles and a resin binder matrix as a principal compo...
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JP4400562B2 |
A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidaz...
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JP4390306B2 |
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JP4390616B2 |
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer in...
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JP4382489B2 |
A method is provided for etching quaternary interface layers of InxGa1-xAsyP1-y which are formed between layers of GaAs and InGaP in heterojunction bipolar transistors (HBTs). In accordance with the method, the interface is exposed by et...
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JP4370737B2 |
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JP4368495B2 |
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JP4355201B2 |
A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.
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JP4352519B2 |
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JP4343084B2 |
A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufac...
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JP4342550B2 |
A liquid crystalline material in the form of an anisotropic gel containing a polymerized monotropic or enantiotropic liquid crystalline material and a low-molecular weight liquid crystalline material, wherein the polymerized material a) ...
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JP4341995B2 |
A liquid crystalline material in the form of an anisotropic gel containing a polymerized monotropic or enantiotropic liquid crystalline material and a low-molecular weight liquid crystalline material, wherein the polymerized material a) ...
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JP4339284B2 |
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JP4339034B2 |
A polishing composition containing an alpha-alumina, an intermediate alumina, an oxidizing agent and water; a method for reducing waviness of a substrate to be polished, including the step of applying the polishing composition to the sub...
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JP2009200506A |
To provide an etching agent composition for a thin film having high permittivity to be used in manufacturing processes of a semiconductor device which uses a thin film having high permittivity, specifically, a semiconductor device which ...
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JP4311247B2 |
Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An...
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JP4313144B2 |
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JP4282927B2 |
An etchant includes hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt.
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JP4275157B2 |
The invention aims at providing a practical process for chrome-free metallization of plastic surfaces by which a plating film adhering tightly to the surface of a plastics part can be formed and which is free from the deposition on a jig...
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JP4270750B2 |
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an orga...
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JP4264679B2 |
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JP4264781B2 |
Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process ...
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JPWO2007060824A1 |
An etching solution for a thermoplastic polyimide resin containing alkali metal hydroxide, water and ethanolamine, and the relationship between the alkali metal hydroxide concentration (X% by weight) and the water concentration (Y% by we...
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JP2009514238A |
Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the...
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JP4249008B2 |
A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organi...
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JP4241018B2 |
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JP4242158B2 |
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask app...
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JP4230631B2 |
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JP4221601B2 |
An etching solution having an etch rate of 2 ANGSTROM /minute or greater for a film having a relative dielectric constant of 8 or higher (a High-k film, and whose ratio of the etch rate of a thermal oxide (THOX) film to that of a High-k ...
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JP2009502473A |
Porous track membranes are produced by exposing a polymeric film to a bombardment of heavy ions to provide the film with a track density, and etching pores into the resulting tracked film with an etching solution to provide the film with...
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JP4206313B2 |
A polishing composition for a magnetic disk, comprising alumina, water, a peroxide and an organic acid; a polishing process for a substrate to be polished, comprising the step of polishing the substrate to be polished with the polishing ...
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JP4205347B2 |
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JP4202157B2 |
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JP4202826B2 |
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JP4202424B2 |
A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material...
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JP4202201B2 |
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JP4202183B2 |
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JP4187357B2 |
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JP2008282943A |
To provide a wet etching method of a gallium oxide single crystal, with which a technique of wet etching in a semiconductor manufacturing process is applicable to a gallium oxide single crystal.In the wet etching method of a gallium oxid...
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JP4181129B2 |
The present invention provides methods of polishing and/or cleaning copper interconnects using bis(perfluoroalkanesulfonyl) imide acids or copper tris(perfluoroalkanesulfonyl) methide acids compositions.
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