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WO/2024/112477A1 |
Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a first user equipment (UE) may transmit, to a network node or a second UE, a secret key (SK)/artificial noise (AN) (SK/AN) buffer sta...
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WO/2024/112362A1 |
A multi-quantum-reference (MQR) laser frequency stabilization system includes a laser system, an MQR system, and a controller. The laser system provides an output beam with an output frequency, and plural feedback beams with respective f...
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WO/2024/112018A1 |
An embodiment provides a light-emitting device comprising: a substrate; a first electrode and a second electrode which are disposed on the substrate spaced apart from each other; a light-emitting unit arranged on the first electrode and ...
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WO/2024/112606A1 |
A method of removing a solid-state die handle substrate from a solid-state die may include providing a substrate structure including a first substrate, a second substrate bonded to the first substrate and the solid-state die bonded to th...
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WO/2024/111583A1 |
The purpose of the present invention is to provide: a vertical cavity light emitting element which has a long service life and high efficiency, and with which it is possible to suppress any reduction in the service life of the element, w...
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WO/2024/105762A1 |
The present disclosure relates to a QCL device, an external resonant QCL module device, an analysis device, and a light irradiation method, and the purpose of the present disclosure is to enable wavelength sweeping in a wider wavelength ...
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WO/2024/104226A1 |
A narrow-pulse-width laser (100), a narrow-pulse-width laser emission method and apparatus, and a storage medium. The narrow-pulse-width laser (100) comprises: a pulse signal control module (102) and a pulse laser emission module (104), ...
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WO/2024/104500A1 |
Provided are a high-aluminum component oxidation limiting semiconductor laser and a preparation method therefor, relating to the technical field of semiconductor lasers. The high-aluminum component oxidation limiting semiconductor laser ...
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WO/2024/107267A1 |
Aspects of the present disclosure describe semiconductor DFB laser structures including both pumped and unpumped regions/sections wherein unpumped regions act as DBR reflector(s) while pumped regions act as DFB gratings. Semiconductor DF...
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WO/2024/105398A1 |
An active photonic device such as a laser has an epitaxial layer structure epitaxially grown on a substrate (136) and has an elongate suspended beam (304) supported over an etched void (316) between the suspended beam and the substrate. ...
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WO/2024/105764A1 |
This optical device comprises a first semiconductor layer (102) formed on a clad layer (101), a first core (102a) and a second core (102b) formed such that the first semiconductor layer (102) is positioned therebetween on the clad layer ...
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WO/2024/105723A1 |
A multi quantum well structure (11) according to the present invention is disposed between a p-type semiconductor and an n-type semiconductor in a semiconductor laser (10) and comprises a plurality of well layers (121-123) and a pluralit...
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WO/2024/043944A3 |
A surface-emitting, single mode laser includes a gain medium and a photonic structure. The gain medium is configured to emit an electromagnetic wave. The photonic structure is electromagnetically coupled to the gain medium and has a cavi...
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WO/2024/107353A1 |
An external cavity tunable laser includes a gain median module to generate a broadband optical spectrum covering a predetermined wavelength range; a collimate lens turning a diverging beam into a collimated beam; a pair of etalons to tun...
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WO/2024/104978A1 |
The invention relates to a laser device (10) comprising a whispering-gallery mode resonator (120), which is ring-shaped or disc-shaped, wherein a ring or disc plane defines a first horizontal plane, and comprises a laser-active material ...
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WO/2024/100782A1 |
An optical integrated device (300) according to the present disclosure is obtained by integrating an optical functional element (100) with an optical circuit element (200), wherein: the optical functional element (100) comprises a protru...
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WO/2024/100836A1 |
A semiconductor laser (10) according to this invention is a distributed feedback semiconductor laser in which a diffraction grating layer (106) is arranged in a waveguide structure including an active layer (104). The diffraction grating...
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WO/2024/100788A1 |
This semiconductor device comprises: a substrate (101) composed of a semi-insulating InP; a first photoactive element (102) formed on the substrate (101); and a second photoactive element (103) formed on the substrate (101). An optical w...
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WO/2024/100689A1 |
Method for characterizing a batch of gain chips, each having a first reflective face and a second transparent face, the method comprising, for each gain chip: positioning the gain chip (99) with the second face facing towards a reflectiv...
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WO/2024/103020A1 |
The present invention includes a high-intensity short-pulse laser generation system. The system has a resonator and an optical path changing device coupled to the resonator. The resonator is configured to, by causing at least a part of l...
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WO/2024/100013A1 |
The invention relates to a laser pulse generator (10) comprising: a) a pulse shape generating device (12) having - a pulse shape memory (16) for storing data and a digital-to-analogue converter (16) connected thereto, - a first connectio...
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WO/2024/100148A2 |
A light-emitting diode (10) comprises a semiconductor layer stack (100). The semiconductor layer stack (100) comprises a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (120) of a second conduct...
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WO/2024/101079A1 |
The present invention reduces the influence of temperature changes. The present technology provides a light emitting element which is provided with at least two active layers that each have a quantum nanostructure, wherein the waveleng...
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WO/2024/102588A1 |
An optoelectronic device (20, 80, 90, 108) includes an array (21) of lasers (22, 24, 26, 28), which are configured to output respective beams. One or more modulators (32, 82) apply frequency modulations to the beams. A single reference i...
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WO/2024/095620A1 |
Provided is a surface emitting laser that can apply a desired loss to a transverse mode. A surface emitting laser according to the present invention comprises an active layer, a first structure having a concave mirror disposed on one s...
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WO/2024/095835A1 |
This semiconductor laser device comprises: an active layer that includes a barrier layer and well layers which are provided respectively on both sides of the barrier layer in the thickness direction of the barrier layer; and an n-type se...
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WO/2024/096421A1 |
Disclosed is a method for a light detection and ranging (LiDAR) device to measure the distance from the LiDAR device to an object. Specifically, the method may include a LiDAR device: outputting a first laser beam through a vertical-cavi...
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WO/2024/097110A1 |
A method of forming a semiconductor device includes etching a semiconductor layer to form a plurality of mesa stripes in the semiconductor layer. The plurality of mesa stripes extend in a first direction and include mesa sidewalls that e...
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WO/2024/095193A1 |
Some semiconductor gain chips used for both optically pumped and electrically pumped semiconductor lasers contain transparent layers for cooling or other purposes. These layers may cause unwanted etalon effect if one or more of the trans...
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WO/2024/095424A1 |
A beam splitter (3) divides a laser beam (2) to generate a first beam (5). An etalon (6) transmits therethrough a portion of the first beam (5), and reflects the remaining portion of the first beam (5) on an end surface thereof to genera...
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WO/2024/095504A1 |
Provided is a surface-emitting laser capable of achieving stabilization of a horizontal mode while suppressing a decline in productivity. A surface-emitting laser according to the present technology comprises: a first structure includi...
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WO/2024/095556A1 |
Provided is a fiber retention structure that can suppress production of heat by light not coupled to an optical fiber. A fiber retention structure 30 comprises: an optical fiber 20 that includes a front end 21, a first fixing part 22 tha...
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WO/2024/087176A1 |
The present application relates to the technical field of electronics. Provided are an integrated apparatus and a manufacturing method therefor, and an integrated circuit, a detection apparatus and a terminal, which are used for reducing...
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WO/2024/089024A1 |
The invention relates to a cooling method (10) for controlling the temperature of a cooling device (16) taking into account heating at least one machine component (12) of a process machine (14) during operation of the process machine (14...
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WO/2024/089701A2 |
A system for transmitting laser power to a remote receiver, comprising a laser diode, an optical system for collimating and focusing the laser beam onto the receiver, and a scanning system for directing the beam towards the receiver. The...
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WO/2024/083613A1 |
The invention relates to a semiconductor component (10) for emitting laser light, comprising a main body (11) and, arranged on a surface (18) of the main body (11), at least one mesa body (12) comprising a superficial emission region (13...
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WO/2024/082726A1 |
The present application provides a circuit structure, a driving circuit of a semiconductor laser, and a laser radar transmitting module. The circuit structure comprises a charging circuit and a discharging circuit; an input end of the ch...
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WO/2024/084693A1 |
A semiconductor laser light source device comprising a metal stem (1), a temperature control module (3) secured to the front surface of the metal stem (1), a first support block (4) secured to the temperature control module (3), a first ...
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WO/2024/084286A2 |
A system and method for assembly. In some embodiments, the method includes: optically aligning a transfer stamp with a platform wafer, the transfer stamp including a device coupon for bonding to the platform wafer, the device coupon incl...
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WO/2024/083995A1 |
The invention relates to an oscillator arrangement for generating THz radiation with an active laser layer structure (10) based on a semiconductor material for emitting laser light (107) of at least one wavelength, the main emission dire...
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WO/2024/083505A1 |
The invention relates to an optoelectronic module (1). The optoelectronic module (1) comprises a first semiconductor component (11), a second semiconductor component (12) and a third semiconductor component (13). The semiconductor compon...
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WO/2024/085477A1 |
The present invention relates to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, and, more specifically, to a vertical light-emitting nanorod laser diode and a manufacturing method therefor, the diode b...
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WO/2024/085108A1 |
A semiconductor light-emitting element (1) emits light from a front end surface (1F) and comprises a semiconductor laminate (1S) having a waveguide, a first P-side electrode (71), and a pad electrode (73). The semiconductor light-emittin...
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WO/2024/085205A1 |
The present invention achieves a light-emitting device that emits light with a good polarization ratio. Provided is a light-emitting device comprising: a first sub-mount which has a ceramic substrate that contains AlN and a plurality of ...
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WO/2024/084898A1 |
Provided is a vertical cavity light emitting element having a low threshold current density, high luminous efficiency, and improved lifespan. A vertical cavity surface light emitting laser 10 comprises: a semiconductor DBR12; an n-type s...
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WO/2024/078268A1 |
A laser device, comprising a housing (100), a plurality of laser chip assemblies (200), and a shaping and homogenizing component (300). The housing (100) comprises a bottom plate (101) and a side wall (102). The side wall (102) is provid...
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WO/2024/074254A1 |
In one embodiment, the optoelectronic light source (1) comprises : - a first semiconductor laser (21) configured to emit a first laser beam (L1), and - a redirecting optical element (4), wherein the first laser beam (L1) runs from the fi...
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WO/2024/076950A1 |
An optics-integrated confinement apparatus system comprises a confinement apparatus chip having a confinement apparatus formed thereon and having at least one apparatus optical element disposed and/or formed thereon.
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WO/2024/076720A1 |
The process of heating up a cavity with a diode laser or light beam source with a booster current pulse followed by application of a drive to the diode to produce a continuous wave (CW) over time while the cavity cools (spontaneously or ...
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WO/2024/076423A1 |
A display system includes an integrated laser and modulator device and a display assembly. The integrated laser and modulator device includes a laser component configured to facilitate light emission responsive to applied current and a m...
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