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WO/2023/209138A1 |
The invention relates to an elastic surface wave device (100) comprising a piezoelectric layer (120), electrodes (150A, 150B) embedded in the piezoelectric layer, and a substrate (130) carrying the piezoelectric layer and the electrodes,...
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WO/2023/208685A1 |
The invention relates to a volume-acoustic device comprising a first electrode (1a; 1b) and a second electrode (2a; 2b); a piezoelectric element (3) arranged between the first electrode (1a; 1b) and the second electrode (2a; 2b), wherein...
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WO/2023/207474A1 |
The present application relates to a filter, a multiplexer, a radio frequency front-end module, and a preparation method for a filter. The filter comprises a substrate, a piezoelectric layer, a first lower electrode, a second lower elect...
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WO/2023/204245A1 |
An elastic wave device 10 comprises: a support member 20 having an energy confinement layer (for example, a cavity 21) on one main surface; a piezoelectric layer 30 provided to the one main surface of the support member 20 so as to cover...
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WO/2023/200670A1 |
A filter device is provided that includes a substrate having a surface and a piezoelectric plate (610) supported by the substrate. A plurality of interdigital transducers, IDTs, for multiple resonators are provided that each have interle...
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WO/2023/195409A1 |
An elastic wave device according to the present invention comprises a support substrate that has a cavity in one principal surface, a piezoelectric layer that is provided on the one principal surface of the support substrate, and a funct...
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WO/2023/189103A1 |
The objective of the present invention is to provide a composite substrate having excellent durability. A composite substrate according to an embodiment of the present invention includes, in the stated order, a piezoelectric layer, a ref...
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WO/2023/188760A1 |
According to the present invention, a detection device comprises: a substrate 10; a first piezoelectric thin film resonator 11a that comprises a first lower electrode 12a that is provided on the substrate, a first piezoelectric layer 14a...
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WO/2023/189334A1 |
An elastic wave sensor 100 comprises: a piezoelectric substrate 10; a pair of comb electrodes 24a and 24b which are provided on the piezoelectric substrate 10 and have a plurality of electrode fingers 22a and 22b, spaces between adjacent...
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WO/2023/181487A1 |
This crystal oscillation element (102) comprises: a crystal piece (110) having a pair of main surfaces (112, 114) facing each other; and a pair of excitation electrodes (120, 130) provided to the pair of main surfaces (112, 114) of the c...
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WO/2023/173900A1 |
The present invention provides a bulk acoustic resonator, comprising a cavity formed in a substrate or formed in a support layer on the substrate; and a lower electrode, a piezoelectric layer, and an upper electrode. An overlapping regio...
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WO/2023/171025A1 |
A resonant device (1) comprising: a first substrate (50) that includes a first silicon substrate (20) and a resonator (10); a second substrate (30) that is disposed on the side of the first substrate (50) on which the resonator (10) is p...
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WO/2023/170363A1 |
The invention relates to a method for correcting the thickness of a piezoelectric layer (3) arranged on a piezoelectric-on-insulator substrate, the method comprising the steps of: • measuring the thickness of at least one intermediate ...
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WO/2023/171715A1 |
The present invention provides: an elastic wave device having excellent frequency characteristics; a branching filter including the elastic wave device; a communication device including the elastic wave device; and a method for manufactu...
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WO/2023/162301A1 |
A resonator (10) equipped with a vibration part (120) configured to vibrate as the main vibration in a predetermined vibration mode, and formed on a silicon substrate (270) containing phosphorus (P), the silicon substrate (270) having a ...
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WO/2023/160905A1 |
An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structur...
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WO/2023/157504A1 |
A crystal oscillator (100) has a frequency adjustment metal film (36) comprising a metal underlayer (36a) and a metal layer (36b) formed on the first main surface (301) of a second sealing member (30). In frequency adjustment of the crys...
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WO/2023/159091A1 |
A filter device is provided that includes a substrate and a piezoelectric plate attached to the substrate. A conductor pattern (638a, 638b, 738a, 738b) is formed at a first surface of the piezoelectric plate and includes interdigital tra...
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WO/2023/153272A1 |
Provided is an acoustic wave device in which a contact between a wire on a mounting substrate and a wire on a piezoelectric substrate can be suppressed, and degradation of electrical characteristics can be suppressed. An acoustic wave ...
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WO/2023/143005A1 |
Provided in the present invention are a high-bandwidth silicon back face etching type film bulk acoustic resonator, and a preparation method therefor. The bulk acoustic resonator sequentially comprises a substrate, a dense oxide film, a ...
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WO/2023/145626A1 |
This piezoelectric body has a first part, a second part and a third part. In a plan view, at least a portion of the second part is located on one side of a first direction relative to the first part. At least a portion of the third part ...
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WO/2023/140270A1 |
A method for manufacturing an elastic wave element according to the present disclosure is for manufacturing an elastic wave element that includes a support substrate, a piezoelectric layer provided on the support substrate, and a functio...
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WO/2023/140070A1 |
Provided is a method for adjusting the frequency of a quartz oscillator (100), wherein: a metal film (36) for frequency adjustment that comprises a base metal layer (36a) and a metal layer (36b) layered thereon is formed on a first princ...
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WO/2023/135844A1 |
The invention provides a composite substrate having exceptional durability. This method for producing a composite substrate according to an embodiment of the present invention comprises: forming a first layer on a lower surface side of a...
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WO/2023/134962A1 |
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes...
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WO/2023/134252A1 |
The present invention relates to radio frequency filtering technology, and disclosed are a BAW filter structure and a preparation method. With respect to a stress problem in the prior causing industrial production to be unviable, the pre...
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WO/2023/125756A1 |
The present invention provides a preparation method for a broadband film bulk acoustic resonator. The preparation method comprises the following steps: taking a substrate, applying glue, carrying out exposure, and cleaning, and then etch...
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WO/2023/126020A1 |
The present application relates to the technical field of filters. Particularly provided are a filter, a multiplexer, a radio frequency front end, and a method for manufacturing the filter. The filter in the present application comprises...
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WO/2023/129717A1 |
A method for fabricating a multi-layer resonator assembly includes sequentially fabricating a plurality of vertically-stacked resonator layers including, for each resonator layer of the plurality of resonator layers, depositing a dielect...
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WO/2023/118574A1 |
The invention relates to a method for fabricating a donor substrate comprising the steps of A: providing a manipulation substrate, B: providing a target substrate, C: attaching the target substrate to the manipulation substrate, and D: g...
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WO/2023/108590A1 |
The present application discloses a high-frequency high-Q-value acoustic resonator and a manufacturing method therefor. The acoustic resonator comprises: a substrate; a release layer provided on the surface of one side of the substrate; ...
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WO/2023/097531A1 |
The embodiments of the present application relate to the technical field of semiconductors. Provided are a bulk acoustic wave resonator, a filter and an electronic device, by means of which the performance of the filter can can improved....
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WO/2023/097182A1 |
Filter devices and methods of fabrication are disclosed. An acoustic filter device includes a substrate (720) and a piezoelectric plate (710), a first portion of the piezoelectric plate spanning a first cavity (740B) in the substrate and...
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WO/2023/090460A1 |
The objective of the present invention is to increase the number of acoustic wave device chips that can be manufactured from one mother substrate. In this method for manufacturing an acoustic wave device, a plurality of acoustic wave ele...
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WO/2023/087211A1 |
Embodiments of the present application relate to the field of surface acoustic waves (SAWs). Disclosed are a SAW resonator and a SAW filter, mitigating the problem in the prior art that it is difficult to satisfy a device miniaturization...
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WO/2023/082521A1 |
The present invention belongs to the technical field of film bulk acoustic resonators. Disclosed is a method for rapidly forming a cavity structure of a micro-acoustic film resonator. The method comprises: etching a groove in a silicon s...
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WO/2023/081769A1 |
A stacked die XBAR filter device (600) includes a first die (630) containing one or more XBARs on a first surface, a second die (640) containing one or more XBARs on a second surface, and one or more conductive vias (V1IN, V1OUT) through...
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WO/2023/078959A1 |
The invention relates to a compact and robust encapsulation system (1) for protection of a surface wave device. The encapsulation system (10) comprises a SAW device (3) and a sealing bead (9) which seals a second substrate (11) to the ba...
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WO/2023/067902A1 |
The present disclosure provides a thin-film piezoelectric resonance device 10 comprising: a substrate 11 in which a vertically-penetrating opening part 11a is formed; and a multilayered structure 33 having a peripheral edge supported by ...
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WO/2023/064661A1 |
Disclosed is a radio frequency, RF, filter (500-1, 500-2) that vertically integrates an acoustic die (510, 514) with 2D or 3D inductors formed in one or more layers (520,530,540) above the acoustic die. The acoustic die is over-molded so...
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WO/2023/058768A1 |
The present invention manufactures an elastic wave device having desired frequency characteristics. This method for manufacturing an elastic wave device includes: a functional electrode deposition step for depositing a functional electro...
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WO/2023/058727A1 |
Provided are: an elastic wave device in which the size of a region occupied by a through-via is reduced on a second surface of a substrate (second substrate); and a method for manufacturing the elastic wave device. This elastic wave devi...
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WO/2023/058728A1 |
Provided are an elastic wave device and a method for manufacturing an elastic wave device in which the shape and depth of a through-hole are stabilized. This elastic wave device has: a first substrate; a piezoelectric layer having one ma...
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WO/2023/058712A1 |
A method according to the present disclosure for manufacturing an acoustic wave element comprising a support substrate, a piezoelectric layer provided on the support substrate, and a functional electrode provided on the piezoelectric lay...
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WO/2023/058769A1 |
The objective of the present invention is to manufacture an acoustic wave device having a desired frequency characteristic. This method for manufacturing an acoustic wave device includes: a functional electrode depositing step for deposi...
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WO/2023/058713A1 |
A method for manufacturing an elastic wave element according to the present disclosure includes a support substrate, a piezoelectric layer provided on the support substrate, and a functional electrode provided on the piezoelectric layer,...
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WO/2023/054694A1 |
The present invention suppresses damage to a piezoelectric layer. This elastic wave device is provided with: an elastic wave element provided with a support member comprising a support substrate that has a thickness in a first direction,...
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WO/2023/054200A1 |
In the method for adjusting a frequency of a crystal vibrator (100), a frequency adjustment metal film (36), which is composed of a substrate metal layer (36a) and a metal layer (36b) laminated on the substrate metal layer, is formed on ...
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WO/2023/046412A1 |
A package (100) that includes an acoustic device, a frame (105) coupled to the acoustic device and a cap substrate (104) coupled to the acoustic device through the frame. The acoustic device includes a substrate (120) and an acoustic ele...
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WO/2023/042834A1 |
[Problem] To provide a crystal device which makes it possible to reduce the cost for noble metal as a material cost without decreasing aging characteristics. [Solution] The present invention uses a carousel-type sputtering device 10 to...
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