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WO/2018/095051A1 |
An SMD quartz resonator, comprising a ceramic base (1), the ceramic base (1) being provided with a resonant cavity, characterized in that, a metal coating (3) is disposed on the frame of the ceramic base (1), and a metal cover plate (2) ...
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WO/2018/092872A1 |
A piezoelectric vibration element manufacturing method comprises: a step of forming, from a piezoelectric substrate, an assembly substrate (100) which is provided with a plurality of crosspiece portions (120) extending in a first directi...
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WO/2018/093137A1 |
A surface acoustic wave element package according to the present invention includes: a surface acoustic wave element including a piezoelectric substrate, and including an IDT electrode and a plurality of electrodes formed on the piezoele...
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WO/2018/088093A1 |
Provided are: a method for manufacturing a substrate having exceptional heat dissipation, and little loss with respect to high frequency waves, without requiring a high-temperature process in which diffusion of metal impurities occurs; a...
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WO/2018/085268A1 |
A layer sequence is proposed that comprises first and second layers that are deposited atop one another in alternation, wherein the first layers (SC1, SC2) comprise SiC1 -xHx and the second layers (SOC1, SOC2) comprise SiOC(H).
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WO/2018/079181A1 |
[Problem] To provide a frequency adjustment method for a piezoelectric oscillation device, the method responding to microminiaturization and enabling frequency adjustment without decreasing frequency adjustment accuracy. [Solution] A fre...
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WO/2018/078472A1 |
A superconducting microwave device (400) is provided. A left-handed resonator (215) include at least one unit cell (205). A non-linear dispersive medium (405) is connected to the left-handed resonator (215), such that one end of the left...
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WO/2018/070221A1 |
A production method for a piezoelectric oscillator, the method including: a step for preparing a piezoelectric oscillation element (10) that has a piezoelectric piece (11), a pair of excitation electrodes (14a, 14b) that are respectively...
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WO/2018/070336A1 |
A piezoelectric vibrator (1) is provided with: a piezoelectric vibration element (10); a base member (30) including a first principal surface (32a) on which the piezoelectric vibration element (10) is held by conductive holding members (...
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WO/2018/066653A1 |
[Problem] The objective of the present invention is to provide a method of manufacturing a composite substrate configured to include a piezoelectric layer having a low variation in an amount of Li, and a support substrate. [Solution] Thi...
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WO/2018/063284A1 |
Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various g...
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WO/2018/063299A1 |
A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequen...
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WO/2018/063294A1 |
Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI ...
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WO/2018/061356A1 |
The purpose of the present invention is to provide a piezoelectric vibrator, a manufacturing method for a piezoelectric vibrator and an adjustment device which enable the resonance frequency of a piezoelectric vibrator to be adjusted aft...
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WO/2018/057071A1 |
A bulk acoustic wave resonator apparatus includes a resonator member having an annulus shape, and at least one anchor structure coupling the resonator member to a substrate. A perimeter of the resonator member is at least partially defin...
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WO/2018/047876A1 |
The invention comprises: a crystal oscillation element (10) which has a crystal piece (11), a pair of excitation electrodes (14a, 14b) provided so as to face mutually opposite both principal surfaces (12a, 12b) of the crystal piece (11),...
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WO/2018/043496A1 |
Provided is an elastic wave device that can easily perform frequency adjustment of a plurality of band-pass-type filers configured on the same piezoelectric substrate. An elastic wave device 1 is provided with: a first band-pass-type fil...
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WO/2018/038915A1 |
A single-die multi-FBAR (film bulk acoustic resonator) device (200) includes multiple FBARs (202, 204, 206) having different resonant frequencies formed over a single substrate (220). The FBARs include piezoelectric layers (212, 214, 216...
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WO/2018/021296A1 |
An oscillation element comprises a crystal piece, a pair of excitation electrodes, and a pair of pad portions. The crystal piece includes a pair of main surfaces, and a side surface which connects the outer edges of the pair of main surf...
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WO/2018/016169A1 |
Provided is a surface acoustic wave device composite substrate in which a piezoelectric single crystal film is not entirely peeled off even when being heated to 400°C or higher in a step after bonding. The composite substrate is manufac...
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WO/2018/016314A1 |
Provided is a high-performance surface acoustic wave device composite substrate which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joining interface between a piezoelectric crystal fi...
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WO/2018/012279A1 |
The present invention addresses the problem of providing a substrate for surface acoustic wave elements, which has high thermal conductivity. A substrate for surface acoustic wave elements according to the present invention is characteri...
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WO/2018/008651A1 |
The present invention improves the piezoelectric constant of a GaN piezoelectric film. A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at lea...
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WO/2018/006883A1 |
A method for preparing a film bulk acoustic wave device by using a film transfer technology comprises: 1) providing an oxide single-crystal substrate (1); 2) implanting ions from an implantation surface (11) into the oxide single-crystal...
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WO/2018/006754A1 |
A contactless adhesive spray system utilized in producing a surface-mount quartz crystal oscillator comprises a full array of substrate bases (1), chips (4), and an adhesive spray system. The full array of substrate bases (1) and the chi...
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WO/2018/006755A1 |
The invention relates to the field of electronic devices, and specifically, to a full-array die attachment device and method utilized in producing a surface-mount quartz crystal oscillator. The full-array die attachment device comprises ...
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WO/2018/005337A1 |
A component (B) is specified which comprises a functional structure (FS) on a carrier (TR) that is spanned by a thin-layer covering (DSA) resting on said carrier. A first wiring layer (VE1) is applied onto or in the thin-layer covering a...
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WO/2018/002440A1 |
The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the ...
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WO/2018/005351A1 |
A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), ...
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WO/2018/003837A1 |
A multiplexer (1) provided with: an LB band filter (10) disposed on a first path linking a common terminal (Port1) and an individual terminal (Port2); an HB band filter (20) disposed on a second path linking the common terminal (Port1) a...
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WO/2017/222990A1 |
Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The...
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WO/2017/221518A1 |
The present invention provides an elastic wave device which achieves miniaturization and does not tend to cause contact between a cover member and an IDT electrode. An elastic wave device 1, wherein an IDT electrode 9 constituting a long...
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WO/2017/218690A1 |
Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonat...
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WO/2017/212774A1 |
Provided is an elastic wave device having excellent moisture resistance. An elastic wave device 1 is provided with: a supporting substrate 2, the upper surface of which is provided with a recessed section 2c; a piezoelectric thin film 4 ...
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WO/2017/212677A1 |
The present invention adjusts resonance frequency without impairing the piezoelectric property of a resonator. The present invention comprises: a step for preparing a lower cover; a step for disposing a substrate such that the lower surf...
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WO/2017/208866A1 |
The present invention is provided with: a crystal oscillation element (100) including a crystal strip (110) that has principal surfaces facing each other, a first excitation electrode (130) and a second excitation electrode (140) provide...
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WO/2017/208568A1 |
The present invention inhibits a resonance frequency from being impacted by an electric charge charged to an insulator layer on a resonator or a conductive layer on the insulator layer. The present invention comprises: a first electrode;...
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WO/2017/208747A1 |
The present invention comprises: preparing an aggregate substrate (10); and forming through-holes (20) and an electrode layer (400) in the aggregate substrate, wherein the electrode layer includes via electrodes respectively provided in ...
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WO/2017/210495A1 |
A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion...
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WO/2017/203173A1 |
The invention relates to a method for healing defects in a layer (10) of composition ABO3 where A consists of at least one element from: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, ...
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WO/2017/193582A1 |
A packaging structure for a surface acoustic wave filter chip, comprising a substrate (10). The front side of the substrate (10) is provided with a substrate groove (12) and a substrate glue overflow groove (13); a chip (20) is flip-chip...
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WO/2017/192899A1 |
An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes two semiconductor devices. The plurality of CMOS c...
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WO/2017/188504A1 |
An active frequency selective surface and a manufacturing method therefor are provided. Here, the active frequency selective surface is a frequency selective surface for transmitting or reflecting electromagnetic waves having a specific ...
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WO/2017/187903A1 |
Provided is a method for manufacturing a composite wafer in which a lithium tantalate film having a high coefficient of thermal expansion is laminated on a support substrate having a low coefficient of thermal expansion, wherein it is po...
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WO/2017/187768A1 |
Provided is an elastic wave device with which productivity can be increased and insertion loss can be decreased. An elastic wave device 1 comprises: a piezoelectric substrate 2; first to third IDT electrodes 4A-4C which are provided on t...
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WO/2017/179300A1 |
Provided is an elastic wave device in which a wiring electrode is not susceptible to the occurrence of damage. According to the present invention, a first main surface 2a of a piezoelectric substrate 2 is provided with an IDT electrode 3...
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WO/2017/172075A1 |
Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode,...
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WO/2017/172074A1 |
Embodiments of the invention include delay line circuitry that is integrated with an organic substrate. Organic dielectric material and a plurality of conductive layers form the organic substrate. The delay line circuitry includes a piez...
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WO/2017/172062A1 |
Embodiments of the invention include a piezoelectric resonator which includes an input transducer having a first piezoelectric material, a vibrating structure coupled to the input transducer, and an output transducer coupled to the vibra...
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WO/2017/163729A1 |
[Problem] When providing a bonding layer on a support substrate formed from a ceramic and bonding the bonding layer and a piezoelectric single crystal substrate together, to improve bonding strength between the piezoelectric single cryst...
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