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WO/2022/063149A1 |
A method for manufacturing an FBAR resonator, comprising: forming a lower electrode on a substrate; forming a dielectric layer or a piezoelectric layer on the lower electrode and the substrate, said layer having a first thickness; planar...
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WO/2022/061835A1 |
Disclosed is a manufacturing process for a bulk acoustic resonator, the process comprising: making an acoustic mirror on a substrate; making, on the substrate, a bottom electrode layer for covering the acoustic mirror; chemically treatin...
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WO/2022/057769A1 |
Disclosed are a thin-film bulk acoustic wave resonator and method for manufacture thereof and filter, the acoustic wave resonator comprising: a piezoelectric stack structure, said piezoelectric stack structure comprising a first electrod...
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WO/2022/057466A1 |
The present invention relates to a film bulk acoustic wave resonator, a manufacturing method therefor and a filter thereof. The film bulk acoustic wave resonator comprises a piezoelectric laminated structure; the piezoelectric laminated ...
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WO/2022/056953A1 |
A thermistor (602) resonator and a manufacturing method therefor. The thermistor (602) resonator comprises a first substrate (10), a second substrate (20), a first pad (40), a thermistor structure (60), a vibrator (80), and an upper cove...
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WO/2022/057768A1 |
Disclosed in the present invention is a manufacturing method for a thin film bulk acoustic wave resonator, comprising: forming a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being positioned bet...
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WO/2022/057767A1 |
Disclosed is a method for manufacturing a thin-film bulk acoustic resonator, comprising: providing a first substrate; forming a cavity on an upper surface of the first substrate; forming a sacrificial layer in the cavity; sequentially fo...
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WO/2022/057765A1 |
The present invention relates to a method for manufacturing a film bulk acoustic resonator and a filter. The method comprises: forming a first substrate having a first sacrificial layer; sequentially forming a first electrode, a piezoele...
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WO/2022/054372A1 |
[Problem] To improve the bonding strength between a piezoelectric material substrate and a support substrate, effectively reduce the reflection of bulk waves, and suppress spurious emissions. [Solution] This composite substrate 7A for an...
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WO/2022/053161A1 |
A bulk acoustic wave, BAW, resonator (100) on a substrate (102), comprising a piezoelectric element (104), a bottom electrode (106) on a first face (104A) of the piezoelectric element and a top electrode (108) on a second face (104B) of ...
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WO/2022/056138A2 |
Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each...
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WO/2022/047206A1 |
A substrate (202) that includes an encapsulation layer (203), a first acoustic resonator (205), a second acoustic resonator (207), at least one first dielectric layer (240), a plurality of first interconnects (244), at least one second d...
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WO/2022/044397A1 |
Provided are a resonance device, a collective board, and a resonance device manufacturing method with which it is possible to suppress propagation of noise through a holding portion. A resonance device 1 is provided with: a MEMS board ...
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WO/2022/042756A1 |
Disclosed in the present invention is a crystal filter element, comprising: multiple bulk resonators, a first input end point, a second input end point, a first output end point, and a second output end point. The multiple bulk resonator...
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WO/2021/013574A9 |
An electro acoustic filter component with improved acoustic and/or electro acoustic performance is provided. The component comprises a piezoelectric material (PM) the sides of which are plane and preferably free from chipping defects. Th...
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WO/2022/046392A1 |
A package (200) that includes an integrated device (201), an integrated passive device (203) and a void (215). The integrated device (201) is configured as a filter. The integrated device (201) includes a substrate (210) comprising a pie...
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WO/2022/040991A1 |
Disclosed is a preparation method for a Bragg acoustic wave reflective layer structure, comprising preparing, on a substrate, each reflective layer group formed by sequentially stacking a first dielectric layer and a second dielectric la...
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WO/2022/032699A1 |
Disclosed are a manufacturing process of an acoustic resonator, and an acoustic resonator. The acoustic resonator comprises a substrate, an acoustic mirror, and a resonant thin film layer composed of a bottom electrode layer, a piezoelec...
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WO/2022/034716A1 |
This circuit board has mounted thereon an electronic component and is provided with: a base board having a first surface on which the electronic component is mounted, a second surface opposite to the first surface, and a side surface pro...
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WO/2022/036299A1 |
The disclosure is directed to an electronic device with a solder interconnect and multiple material encapsulant. The electronic device (10) includes a die last assembly with the die (14) assembled to an electronic packaging substrate (12...
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WO/2022/028402A1 |
The present disclosure relates to a bulk acoustic wave resonator assembly, which comprises: a substrate; at least two resonators, the at least two resonators being bulk acoustic wave resonators, and said resonators being stacked in a thi...
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WO/2022/028401A1 |
The present invention relates to a bulk acoustic resonator assembly, comprising a substrate and at least two resonators. The at least two resonators are bulk acoustic resonators and are stacked on one side of the substrate in the thickne...
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WO/2022/017486A1 |
An adjustable resonator and a manufacturing method therefor. The resonator comprises: resonant cavities in a substrate, the resonant cavities at least including a central first resonant cavity and a peripheral second resonant cavity; a f...
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WO/2022/012437A1 |
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a lead-out electrode, a piezoelectric layer, and an external electrode t...
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WO/2022/012438A1 |
The present invention relates to a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a first electrode, a piezoelectric layer and a second electrode which are stacked; an effect...
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WO/2022/007238A1 |
Provided is a resonator, comprising a substrate (1), a composite film (2) arranged on the substrate (1) along a first direction, and a vertical soundwave reflector (3) disposed on the composite film (2) at a side near the substrate (1). ...
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WO/2022/001860A1 |
The present disclosure relates to a bulk acoustic wave resonator comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode and a piezoelectric layer, wherein an overlapped area of the acoustic mirror, the bottom ele...
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WO/2021/258490A1 |
The present invention provides a filtering device, a radio frequency front-end device, and a wireless communication device. The filtering device comprises a substrate, at least one resonance device, a passive device, and a connecting pie...
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WO/2021/254342A1 |
The present invention relates to a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a first substrate provided with a first cavity; a piezoelectric stacked ...
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WO/2021/253757A1 |
The present invention provides a thin-film acoustic wave filter and a manufacturing method therefor. The thin-film acoustic wave filter comprises: a first substrate comprising a first surface and a second surface disposed opposite to eac...
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WO/2021/254343A1 |
Provided are a thin-film bulk acoustic wave resonator and a manufacturing method therefor. The thin-film bulk acoustic wave resonator comprises: a first substrate, which is provided with a first cavity, and a piezoelectric stacked struct...
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WO/2021/248572A1 |
Disclosed is a thin film bulk acoustic resonator, comprising a bottom electrode layer, a piezoelectric layer, and a top electrode layer which are provided on the upper part of a substrate on which an acoustic reflection structure is loca...
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WO/2021/248866A1 |
A bulk acoustic resonator and a manufacturing method therefor, a filter and an electronic device. The manufacturing method comprises: providing a substrate (100), a groove (110) being formed in the substrate (100); forming a sacrificial ...
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WO/2021/244978A1 |
A layered solid element (100) comprises a ferroelectric layer (2) of a crystalline material Li1-x(Nb1-yTay)1+xO3+2x-z which has X- or 33°Y-orientation with respect to a substrate (10) of the layered solid element. The ferroelectric laye...
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WO/2021/238971A1 |
The present invention relates to the technical field of filters, and in particular, to a semiconductor chip, a multiplexer, and a communication device. In the semiconductor chip, a sealing ring between wafers is isolated from a passive d...
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WO/2021/242440A1 |
A package that includes a first filter (312) comprising a first polymer frame (318), a substrate cap (320), a second filter (332) comprising a second polymer frame (338), at least one interconnect (340), an encapsulation layer (450) and ...
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WO/2021/232763A1 |
A film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a carrier substrate (100); a supporting layer (102) bonded to the carrier substrate (100), the supporting layer (102) enclosi...
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WO/2021/232530A1 |
A coupling structure and manufacturing process for a solidly mounted resonator. The solidly mounted resonator comprises a resonant functional layer (131) formed by a lower electrode layer (112), a piezoelectric layer (113) and an upper e...
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WO/2021/227941A1 |
The present disclosure relates to a bulk acoustic wave resonance assembly, comprising two bulk acoustic wave resonators, including a first resonator and a second resonator, wherein the first resonator is a temperature compensation resona...
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WO/2021/227208A1 |
A cavity (405) machining process for a MEMS device, comprising the following steps: depositing a mask layer (102, 202) on a substrate (101, 201, 301, 401); etching off, by using photolithography and etching processes, the mask layer (102...
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WO/2021/225102A1 |
Provided is a method for manufacturing a composite substrate provided with a piezoelectric single crystal film that has good film thickness uniformity and that is not affected by a deterioration in characteristics due to ion implantation...
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WO/2021/225787A1 |
An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photo...
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WO/2021/222412A1 |
An acoustic resonator device includes a piezoelectric plate attached to a substrate. A portion of the piezoelectric plate forms a diaphragm suspended over a cavity in the substrate. A first conductor level includes first and second inter...
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WO/2021/217749A1 |
Provided are a filtering device, a radio frequency front-end device and a wireless communication device. The filtering device comprises: a substrate, a passive device and at least one resonance device, wherein the passive device comprise...
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WO/2021/220538A1 |
An oscillation circuit design assistance method for assisting the design of an oscillation circuit condition in a circuit substrate on which an oscillation IC chip and an oscillator are mounted, the oscillation circuit design assistance ...
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WO/2021/219050A1 |
A resonator assembly and a method for manufacturing same, a filter having the resonator assembly, and an electronic device having the filter or the resonator assembly. The resonator assembly comprises a bulk acoustic resonator and a surf...
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WO/2021/220737A1 |
Provided are a composite substrate capable of improving temperature characteristics while suppressing the generation of cracks and a method for manufacturing the composite substrate. The method according to the present invention for ma...
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WO/2021/221449A1 |
The present invention relates to a filter and to a manufacturing method for same, and particularly, the filter comprises: an RF connector which establishes a predetermined electrical signal line; a filter body which has at least one impe...
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WO/2021/222409A1 |
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a piezoelectric plate having opposed front and back surfaces. A first electrode and a second electrode are formed on the front surface of the pie...
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WO/2021/216382A1 |
A 3D integrated circuit (3D IC) chip (400) is described. The 3D IC chip includes a die (440) having a compound semiconductor high electron mobility transistor (HEMT) active device (410). The compound semiconductor HEMT active device is c...
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