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WO/2016/056352A1 |
The present invention is a niobium oxide sintered compact characterized by having the composition NbOx (2 < x < 2.5). The present invention provides a niobium oxide sintered compact which can be applied as a sputtering target for forming...
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WO/2016/052097A1 |
This switch element is provided with a first electrode, a second electrode disposed opposite the first electrode, and a switch layer provided between the first electrode and the second electrode, the switch layer comprising an amorphous ...
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WO/2016/047254A1 |
In the memory cell unit array according to the present invention, memory cell units 10, composed of first wiring 31, second wiring and a non-volatile memory cell, are arranged in the form of a two-dimensional matrix in a first direction ...
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WO/2016/041766A1 |
The invention relates to an inductive component having a high electrical quality and a good resistance to heat. According to the invention, a component, in particular an inductive component, is produced from a ceramic green body (10). Th...
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WO/2016/042750A1 |
A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar switch of the invention comprises: a plurality of first wires extending in a first ...
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WO/2016/038991A1 |
According to an embodiment of the present invention, a memory device includes first to third layers. The first layer includes a plurality of first wiring lines, and a first insulating portion. The first wiring lines extend in a first dir...
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WO/2016/032644A1 |
A memory cell includes a capacitor that includes a first metal layer and a second metal layer. The capacitor includes a ferroelectric layer disposed between the first metal layer and the second metal layer. The ferroelectric layer is a s...
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WO/2016/025260A1 |
In an example, a capacitor (120) in an integrated circuit (IC) (100), includes: a first finger capacitor (104a) formed in at least one layer (M6-M8) of the IC having a first bus (202a) and a second bus (204a); a second finger capacitor (...
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WO/2016/011313A1 |
A three-dimensional (3D) orthogonal inductor pair (700) is embedded in and supported by a substrate (701), and has a first inductor (702) having a first coil that winds around a first winding axis and a second inductor (706) having a sec...
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WO/2015/198573A1 |
Provided are a semiconductor device and a method of manufacturing the semiconductor device which enable a hard copy of a reconstruction circuit, which employs a resistance change element, to be formed at low cost. The method of manufactu...
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WO/2015/199936A1 |
Methods and apparatuses, wherein the method forms a first plurality of vias in a substrate, further comprising forming the first plurality of vias to be substantially the same height. The method forms a plurality of conductive traces ext...
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WO/2015/187301A1 |
A structure having: a body; a pair of capacitors disposed over different portions of a surface of the body; a first one of the capacitors having an upper conductor and a lower conductor separated a dielectric layer; and a second one of t...
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WO/2015/182074A1 |
The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and th...
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WO/2015/175522A1 |
The present invention relates generally to the fields of electrical engineering and electronics. More specifically, the present invention relates to passive components of electrical circuit and more particularly to a capacitor intended f...
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WO/2015/153229A1 |
An integrated circuit device includes a substrate. The integrated circuit device also includes a first conductive stack including a back-end-of-line (BEOL) conductive layer at a first elevation with reference to the substrate. The integr...
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WO/2015/144755A1 |
The invention relates to a capacitor structure (2) comprising a silicon substrate (4) with first and second sides (6, 8), a double double Metal Insulator Metal trench capacitor (10) including a basis electrode (12), an insulator layer (1...
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WO/2015/148996A1 |
Some novel features pertain to a package substrate that includes a core layer, a first via, a first dielectric layer, and a first inductor. The core layer includes a first surface and a second surface. The first via is located in the cor...
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WO/2015/146311A1 |
An Al-Te-Cu-Zr alloy sputtering target characterized by comprising 20 to 40 at% of Te, 5 to 20 at% of Cu, 5 to 15 at% of Zr and a remainder made up by Al, wherein a Te phase, a Cu phase and a CuTe phase do not exist in the target structu...
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WO/2015/141107A1 |
The present invention is able to provide an excellent battery. A battery according to one embodiment of the present invention is provided with a first electrode layer (6), a second electrode layer (7), and a charge layer (3) to which a c...
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WO/2015/133073A1 |
Provided is a nonvolatile switching element which has high retention ability even if programmed at a low current, while being suppressed in dielectric breakdown of a variable resistance layer during a reset operation. This switching elem...
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WO/2015/131877A1 |
The invention relates to a variable capacitance diode, to a method for producing same, and to a storage device and detector comprising such a variable capacitance diode, wherein the variable capacitance diode has a first and a second ele...
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WO/2015/129413A1 |
In this method of oxidizing treatment of a transition metal film for oxidizing a film containing a transition metal on the surface of an object to be treated, plasma of gas containing at least oxygen is generated, electrons are donated t...
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WO/2015/130455A1 |
The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same, in one aspect, a method of fabricating cross-point memory arrays comprises for...
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WO/2015/131034A1 |
A method for fabricating a capacitor within a FinFET device includes patterning a first gate interconnect material (138-1) having a first recess. The method also includes patterning a first trench interconnect material (132-1) coupled to...
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WO/2015/126640A1 |
A low-profile passive-on-package is provided that includes a plurality of recesses that receive corresponding interconnects. Because of the receipt of the interconnects in the recesses, the passive-on-package has a height that is less th...
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WO/2015/127207A1 |
A circuit including a first die, an integrated passive device and a second layer. The first die includes a first substrate and active devices. The integrated passive device includes a first layer, a second substrate and passive devices. ...
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WO/2015/125449A1 |
[Problem] To provide a low-cost variable-resistance element and a method for producing same. [Solution] The variable-resistance element (1) in one embodiment of the present invention is equipped with a bottom electrode layer (3), a top e...
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WO/2015/123146A1 |
Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is l...
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WO/2015/120375A1 |
Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rec...
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WO/2015/112510A1 |
Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, a first metal redistribution layer coupled to one of the metal la...
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WO/2015/108648A1 |
An integrated circuit device includes a first substrate supporting a pair of conductive interconnects, for example pillars. The device also includes a second substrate on the pair of conductive interconnects. The pair of conductive inter...
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WO/2015/107945A1 |
In one embodiment of the present invention, a switch element is provided with a first electrode, a second electrode disposed so as to face the first electrode, and a switch layer which is provided between the first electrode and second e...
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WO/2015/109137A1 |
A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to for...
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WO/2015/105022A1 |
This organic electroluminescent device is configured by being provided with an organic electroluminescent element having a light emitting surface as one surface, and a drive power supply that is provided on the other surface of the organ...
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WO/2015/105123A1 |
Provided are a resonant tunneling diode element which is capable of ultrafast operation, has high manufacturability, and achieves low-loss and low-power consumption, and a non-volatile memory using the same. In the resonant tunneling dio...
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WO/2015/080770A1 |
A circuit includes a first finger capacitor (100) having a first bus line (110) coupled to a first plurality of finger elements (120) and a second bus line (105) coupled to a second plurality of finger elements (115). The first bus line ...
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WO/2015/076926A1 |
A methods for fabricating a capacitor structure includes fabricating polysilicon structures (PO) on a semiconductor substrate. The method further includes fabricating Ml to diffusion (MD) interconnects on the semiconductor substrate. The...
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WO/2015/069815A1 |
A tunable guard ring for improved circuit isolation is disclosed. In an exemplary embodiment, an apparatus includes a closed loop guard ring (512t) formed on an integrated circuit and magnetically coupled by a selected coupling factor to...
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WO/2015/068651A1 |
Provided is a nonvolatile three-terminal element operated by controlling the band gap of the electron state of a graphene material. A hydrogen ion-conducting or oxygen ion-conducting ion conductor (5) is disposed between graphene oxide o...
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WO/2015/063420A1 |
Structure with a metal-insulator-metal capacitor (1) comprising a substrate (2), a first insulating layer (14) placed electrically on the substrate (2), a lower electrode (6) placed on the first insulating layer (14), a structured metal ...
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WO/2015/059819A1 |
Provided is a small-area nonvolatile semiconductor storage device that constitutes one transistor/cell type memory using surrounding gate transistors (SGTs), i.e., vertical transistors. Disclosed is memory having data stored therein by c...
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WO/2015/040927A1 |
Provided is a non-volatile memory device provided with: a first conductive layer (12a); a second conductive layer (14a); a ferroelectric film (16a)　provided between the first conductive layer and the second conductive layer; and a para...
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WO/2015/034651A2 |
Ferroelectric capacitors used in ferroelectric random access memories (F-RAM) and methods for fabricating the same to reduce sidewall leakage are described. In one embodiment, the method includes depositing over a surface of a substrate,...
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WO/2015/031200A1 |
A MOS capacitor with improved linearity is disclosed. In an exemplary embodiment, an apparatus includes a main branch comprising a first signal path having a first capacitor pair connected in series with reversed polarities and a second ...
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WO/2015/005977A1 |
An integrated circuit device includes a substrate, and a first interlayer dielectric layer on the substrate that includes a first conductive layer and a second conductive layer. The integrated circuit device also includes a first conduct...
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WO/2015/002206A1 |
A semiconductor device of an embodiment of the present invention is provided with the following: a first electrically conductive layer; a second electrically conductive layer; and a ferrodielectric film or ferridielectric film of hafnium...
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WO/2014/208050A1 |
In order to provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, this switching element has: a non-volatile variable resistance element, w...
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WO/2014/204792A1 |
A metal capacitor with an inner first terminal (e.g., a positive terminal) and an outer second terminal (e.g., a negative terminal) is disclosed herein. In an exemplary design, an apparatus (e.g., an IC chip) includes a first conductive ...
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WO/2014/201488A1 |
The invention relates to a semiconductor component formed on a semiconductor substrate comprising at least one device layer and one insulating layer, said component being characterised by at least one semiconductor capacitor electrode in...
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WO/2014/201415A1 |
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-volt...
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