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WO/2012/035786A1 |
A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom ope...
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WO/2012/026506A1 |
In a drive method that enables more stable switching operations, a memory element (10) is equipped with an insulating substrate (1) provided with a first electrode (2), a second electrode (3), and an electrode gap portion (4) for generat...
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WO/2012/024793A1 |
The present invention provides an apparatus and method for manipulating plasmons. The apparatus comprises a support structure and two or more plasmon-responsive elements. The plasmon-responsive elements are disposed adjacent the support ...
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WO/2012/026507A1 |
In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from ...
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WO/2012/023269A1 |
Provided are a nonvolatile storage device, wherein variance of an initial breakdown voltage between nonvolatile storage elements is suppressed and deterioration of yield is eliminated, and a method for manufacturing the nonvolatile stora...
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WO/2012/014447A1 |
In each of the steps of forming a first resistance change layer (18a) and of forming a second resistance change layer (18b), a cycle is executed once or a plurality of times, the cycle including: a first step of introducing a source gas ...
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WO/2012/008160A1 |
Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed ...
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WO/2012/005003A1 |
A nonvolatile semiconductor memory device comprises: a plurality of memory cell holes (101) formed at respective cross points between a plurality of stripe-shaped first interconnections (10) and a plurality of stripe-shaped second interc...
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WO/2012/001978A1 |
Disclosed is a method for manufacturing a variable resistance nonvolatile memory element wherein variation in the resistance can be suppressed. Specifically disclosed is a method for manufacturing a variable resistance nonvolatile memory...
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WO/2012/001944A1 |
Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resist...
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WO/2012/001993A1 |
A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistanc...
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WO/2012/001960A1 |
Disclosed is a nonvolatile memory cell array which is provided with: a laminated structure wherein interlayer insulating films (16) and laminated bodies (21), each of which is composed of a first conductive layer (13), a semiconductor la...
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WO/2011/161936A1 |
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...
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WO/2011/158691A1 |
Provided is a variable resistance element that makes it possible to reduce forming voltage while maintaining reliability. A variable resistance element as recited in one embodiment is equipped with a first electrode, a second electrode, ...
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WO/2011/158821A1 |
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistan...
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WO/2011/155210A1 |
Disclosed are: a non-volatile memory element in which the voltage of an electric pulse necessary for initial brake down can be reduced and the fluctuation in resistivity values can also be reduced; and a non-volatile memory device equipp...
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WO/2011/152061A1 |
Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed...
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WO/2011/142386A1 |
Disclosed is a semiconductor device (10) which is embedded with a non-volatile element (100) in which a state immediately preceding the supply of power is maintained even when power is no longer supplied. The non-volatile element (100) i...
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WO/2011/135843A1 |
Disclosed is a method for manufacturing a variable resistance nonvolatile storage device, which includes: a step wherein a plurality of lower layer copper wiring lines (18), each of which has a stripe shape, are formed on a substrate (11...
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WO/2011/132423A1 |
Disclosed is a variable-resistance non-volatile storage device which varies resistance in a stable manner and is adapted for miniaturization. The non-volatile storage device comprises: a first wiring (101) formed by a barrier metal layer...
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WO/2011/121970A1 |
Disclosed is a forming method for a variable resistance non-volatile memory element which provides lower forming voltage than conventional methods and whereby variation in forming voltage between individual variable resistance elements c...
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WO/2011/118513A1 |
According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentr...
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WO/2011/118185A1 |
Disclosed is a method for driving a non-volatile memory element (100) in which a variable resistance element (10) and a current control element (20) are connected in series, wherein: the variable resistance element (10) is provided with ...
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WO/2011/114666A1 |
Provided is a current control element that is able to prevent the occurrence of a write disturb even when electrical pulses with different polarities are applied, and that is able to apply a large current to a variable resistance element...
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WO/2011/115188A1 |
Disclosed is a variable resistance element which can operate at a low voltage, while maintaining a low leak current. The variable resistance element includes a first electrode (101), a second electrode (103), and an ion conduction layer ...
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WO/2011/114725A1 |
Disclosed is a nonvolatile memory element that can be initialized at low voltage, and which is provided with a variable resistance layer (116), in which the resistance value varies reversibly on the basis of an electrical signal conveyed...
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WO/2011/111361A1 |
Disclosed is a variable resistance nonvolatile memory element which is capable of suppressing variations in the resistance. Specifically disclosed is a nonvolatile memory element which comprises: a silicon substrate (11); a lower electro...
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WO/2011/106860A1 |
A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynit...
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WO/2010/137339A9 |
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...
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WO/2011/096194A1 |
Disclosed are a method of driving a resistance changing element capable of stable operation, and a nonvolatile memory device that executes the method. The method comprises the steps of writing to the nonvolatile memory device, which lowe...
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WO/2011/090152A1 |
Disclosed is a semiconductor device provided with a variable resistance element that has a lower section electrode, a variable resistance element film comprised of metallic oxide, and an upper section electrode in between a first wiring ...
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WO/2011/083632A1 |
Disclosed is a memory cell that includes a transistor (T1) and a variable resistance element (RC1), which are formed on a base material (10). The transistor (T1) includes: a gate electrode (20), a source electrode (50), and a drain elect...
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WO/2011/080866A1 |
Disclosed is a memory device provided with a plurality of memory cells and an output line (12) shared among the memory cells. Each memory cell is provided with a transistor (6) formed on a substrate (1) and a resistance-change element (1...
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WO/2011/074243A1 |
A resistance-varying element comprising: a lower electrode; a first oxide layer formed on the lower electrode and comprising MOx (wherein x represents the content ratio of O to M); a second oxide layer formed on the first oxide layer and...
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WO/2011/071009A1 |
Provided is a structure for a variable-resistance element that uses an electrochemical reaction. Said structure limits the position at which metal cross-linking breaks to the position where it is preferable that said cross-linking breaks...
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WO/2011/064967A1 |
Disclosed is a nonvolatile storage element, which can achieve a stable resistance change, and furthermore, which is miniaturized. Also disclosed is a method for manufacturing the nonvolatile storage element. The nonvolatile storage eleme...
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WO/2011/065537A1 |
Disclosed is a nonvolatile semiconductor storage device provided with a first wiring; a second wiring that exist at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the secon...
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WO/2011/058947A1 |
Disclosed is a variable resistance element which has a first electrode (101), a second electrode (103), and an ion conducting layer (102), which is provided between the first electrode (101) and the second electrode (103) and contains at...
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WO/2011/052437A1 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less ...
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WO/2011/052279A1 |
Compared to conventional technologies related to optical recording bodies using phase change, the recording/deletion speed can be made drastically faster, and the phase change speed can be controlled at the speed of a phonon time period ...
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WO/2011/052354A1 |
Disclosed is a variable resistance nonvolatile storage element wherein an electrode suitable for a variable resistance operation is provided, said electrode being composed of a metal nitride layer containing Ti and N. The nonvolatile sto...
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WO/2011/052239A1 |
The disclosed variable resistance non-volatile memory device is provided with: a semiconductor substrate (301); a variable resistance element (309) configured from a lower electrode (309a), an upper electrode (309c), and a variable resis...
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WO/2011/052292A1 |
The disclosed device has memory cells provided with transistors and variable resistance elements, and contains memory blocks (10) consisting of N number of memory cells sequentially connected in series. One end of a first transistor (T1)...
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WO/2011/045886A1 |
Disclosed is a resistance-change-type non-volatile storage device for reducing variation in resistance values of a low resistance state of a resistance-change element for stable performance. The resistance-change-type non-volatile storag...
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WO/2011/043448A1 |
Provided is a semiconductor device comprising at least a first electrode, a second electrode, and a layer that is interposed between the first electrode and the second electrode and includes a transition metal oxide layer, the transition...
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WO/2011/030559A1 |
In order to attain a more miniscule size and larger capacity of memory by reducing breakdown voltage for causing resistance variation and by suppressing irregularity of said breakdown voltage, disclosed is a non-volatile memory device (1...
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WO/2011/024271A1 |
A nonvolatile memory element comprising a first conductive layer, a second conductive layer so arranged as to face the first conductive layer, and a variable resistance layer arranged between the first conductive layer and the second con...
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WO/2011/024455A1 |
Disclosed are a resistance-change semiconductor memory device that has a stable resistance change without being influenced by the base thereof and that is suitable for increased capacity, and a production method therefor. The semiconduct...
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WO/2011/013344A1 |
The disclosed variable-resistance non-volatile memory device (100) is provided with a plurality of memory cells (M11, M12, M21, M22) each comprising a variable-resistance element (R11, R12, R21, R22) and a two-terminal current control el...
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WO/2011/013255A1 |
Provided is a nonvolatile storage device characterized by being provided with a storage unit comprising a first insulating layer (10), a second insulating layer (20) which is formed in contact with the first insulating layer (10) after t...
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