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WO/2011/007538A1 |
Disclosed is a variably resistant element (100) used in a memory device having a through-hole, cross-point structure. Further disclosed is a variably resistant memory device using same. The variably resistant element (100) is provided wi...
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WO/2010/150723A1 |
Disclosed is a variable resistance element which has higher reliability, higher integration and excellent insulation characteristics. Specifically disclosed is a variable resistance element wherein a first electrode that is composed of a...
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WO/2010/150720A1 |
Disclosed is a semiconductor device which comprises a variable resistance element having sufficient switching characteristics and has high reliability, high integration and excellent insulation characteristics. Specifically disclosed is ...
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WO/2010/146850A1 |
A nonvolatile storage device (10A) is provided with an upper electrode layer (2), a lower electrode layer (4), a resistance change layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4), and a charge...
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WO/2010/147073A1 |
In a resistive switching memory device provided with only two electrodes, use of the two electrodes is shared between both of cases where a resistance state is changed by the application of a control voltage, and where a drive voltage us...
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WO/2010/144730A2 |
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and met...
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WO/2010/140296A1 |
Provided are a nonvolatile memory element wherein even if a defect occurs in an nonvolatile memory element, writing data to or reading data from other nonvolatile memory elements arranged in the same line or the same row in which the def...
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WO/2010/135460A1 |
Disclosed is an encapsulant composition containing about 15 to about 50 wt% of an ethylene/ethyl acrylate/maleic anhydride copolymer containing about 20 to about 40 wt% of an ethylene/glycidyl (meth)acrylate copolymer; about 2 to about 3...
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WO/2010/125805A1 |
Provided is a method for writing data to a resistance-change element (10a) that can reversibly transition between a high-resistance state and a low-resistance state depending on the polarity of an applied voltage. Even for a resistance-c...
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WO/2010/125780A1 |
Provided is a nonvolatile storage element which has less operational fluctuation and is capable of stable operation. The nonvolatile storage element is provided with: a first electrode (102); a second electrode (106); a variable resistan...
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WO/2010/119677A1 |
A resistance-change element with a design which can improve the stability of the resistance-change operation and reduce the current necessary for changing the resistance-change element, in its initial state immediately after production, ...
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WO/2010/116754A1 |
Provided is a drive method for increasing the retention characteristics of information (resistance values) written to resistance-change non-volatile memory elements. Said method includes: a first write process (S01) that applies a first ...
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WO2010109803A1 |
Memory cells (MC) are each provided with one transistor and one resistance-change element. Each transistor is provided with a first main terminal, a second main terminal, and a control terminal. Each resistance-change element is provided...
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WO2010109876A1 |
A method of driving a resistance-change element, comprising: a writing process of applying a write voltage pulse of a first polarity to a metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from high to low ...
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WO/2010/098463A1 |
Disclosed is a switching element which comprises two electrodes and an organic bistable material intercalated between the electrodes, and which is expected to be applied to organic memory elements and others. Specifically disclosed is a ...
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WO/2010/095295A1 |
Disclosed is a resistive memory element which has a high resistance change rate and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrode...
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WO/2010/095296A1 |
Disclosed is a resistive memory element which has a high resistance change ratio and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrod...
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WO/2010/090002A1 |
In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving ...
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WO/2010/087000A1 |
A process for fabricating a nonvolatile storage having a variable resistance layer where the resistance is varied by at least any one of an applied electric field and an applied current, and a first electrode for applying a voltage to th...
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WO/2010/087211A1 |
The disclosed non-volatile memory element is provided with a first electrode (103), a second electrode (105), and a resistance change layer (104) present between the first electrode (103) and the second electrode (105), and the resistanc...
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WO/2010/086916A1 |
A resistance change element of the present invention comprises: a first electrode (103); a second electrode (107); and a resistance change layer that is interposed between the first electrode (103) and the second electrode (107) and is p...
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WO/2010/084774A1 |
A nonvolatile memory cell (1) is provided with an electrode (10), an electrode (20), and an oxide layer (30) arranged between the electrode (10) and the electrode (20), and in the nonvolatile memory cell, resistance varies when a voltage...
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WO/2010/079829A1 |
In the case of forming an ion-conducting layer on a first electrode to be a metal ion supply source, insulating characteristics of the ion-conducting layer is prevented from deteriorating, while preventing the first electrode from oxidiz...
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WO/2010/079827A1 |
Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance ...
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WO/2010/079816A1 |
Provided is a semiconductor device loaded with a variable resistance element that can increase reliability, increase density and prevent deterioration of insulating characteristics and yield. The semiconductor device has a variable resis...
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WO/2010/073897A1 |
A variable resistance element which comprises a lower electrode (101), an upper electrode (103) and a variable resistance layer (102) that is positioned between the lower electrode (101) and the upper electrode (103). The variable resis...
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WO/2010/070895A1 |
Disclosed is a non-volatile storage device (100) which is provided with a variable resistance element and which allows stable operation. The non-volatile storage device (100) is provided with: memory cells (M111, M112, …) wherein the r...
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WO/2010/067585A1 |
Disclosed is a resistance change element which is capable of preventing the interface resistance, for the side for which the resistance is not changed, from becoming high due to the applied voltage. The resistance change element is confi...
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WO/2010/064444A1 |
Disclosed is a nonvolatile memory element (10) provided with a substrate (11); a lower electrode layer (15) and a resistance layer (16) formed sequentially on the substrate (11); a variable resistance layer (31) formed on the resistance ...
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WO/2010/064340A1 |
Provided is a variable-resistance type nonvolatile storage device which can change resistance thereof stably and accurately at a low voltage. A method for manufacturing the device is also disclosed. The nonvolatile storage device inclu...
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WO/2010/064410A1 |
Disclosed is a nonvolatile memory element provided with a first electrode (103), a second electrode (109), and a variable resistance layer (106) which is placed between the first electrode and the second electrode and has the resistance ...
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WO/2010/064446A1 |
Provided is a nonvolatile memory element capable of stable resistance change operation at a low breakdown voltage. The nonvolatile memory element (100) is equipped with a first electrode layer (103), a second electrode layer (105), and a...
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WO/2010/058569A1 |
A variable resistance element (105) reversibly switches between a low resistance state and a high resistance state by application of electrical signals of different polarities. If a current flowing when a voltage of a first polarity is a...
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WO/2010/050094A1 |
Provided are a nonvolatile semiconductor storage device and a manufacturing method therefor with which microminiaturization and large capacity are possible due to a cross-point structure wherein memory cells are formed in contact holes a...
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WO/2010/038423A1 |
A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107). The variable resistance layer has a multilayer structure which includes at...
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WO/2010/038442A1 |
Provided are a method for driving a resistance change element capable of a stable operation and a nonvolatile storage device which implements the method. The method comprises a writing step for changing the resistance state of a resista...
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WO/2010/038786A1 |
Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change...
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WO/2010/032470A1 |
Disclosed is a current suppressing element that can prevent the occurrence of write disturbance, can allow high current to flow into a resistance variable element, and can write data without any problem even when electric pulses having d...
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WO/2010/032468A1 |
Disclosed is a storage element provided with a resistance variable element (1) wherein an electrical resistance value of each of the storage elements (3) arranged in matrix in a storage device (21) changes when an electrical pulse having...
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WO/2010/029645A1 |
A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer an...
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WO/2010/029634A1 |
Provided is a resistance-varying element comprising a resistance-varying portion including a first resistance-varying layer caused to exhibit a plurality of states of different electric resistivities by at least one of an applied voltage...
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WO/2010/029607A1 |
An information recording/reproducing device is provided with a recording layer and a driving section. The recording layer has a first layer which contains a first compound. The first compound contains a mixed crystal of a first oxide con...
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WO/2010/026923A1 |
Disclosed is a storage element that can simultaneously satisfy the number of times of repetitive operations and low-voltage operating characteristics that are in a trade-off relationship. A high-resistivity layer (4) and an ion source l...
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WO/2010/026924A1 |
Disclosed is a storage element that can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties durin...
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WO/2010/022585A1 |
A back sheet of solar cell with high adhesion property comprises a substrate (3) and a fluorine-based film (2). A layer of fluoro-siloxane film (1) or silicon-titanium compound film (4) exists between the substrate (3) and the fluorine-b...
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WO/2010/021134A1 |
A memory cell (300) is configured so that it is equipped with a semiconductor substrate (301); a variable resistance element (309) that consists of a lower electrode (309a), an upper electrode (309c), and a variable resistance layer (309...
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WO/2010/014869A2 |
A chemovoltaic cell converts chemical energy generated by an in-situ molecular hydrogen oxidation reaction into electrical energy by creating a chemically induced nonequilibrium electron population on a catalytic surface of a Schottky st...
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WO/2010/012858A1 |
Disclosed herein is an apparatus including a housing (12), electronic circuitry (18), and an electronic component (22). The electronic circuitry (18) is in the housing (12). The electronic circuitry (18) includes a first capacitive conne...
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WO/2010/004705A1 |
Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes...
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WO/2010/004675A1 |
Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is ap...
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