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WO/2023/095503A1 |
The present invention relates to a wafer-supporting template assembly used for polishing one surface of a wafer, the template assembly being provided with: a back pad; and a guide ring part fixed along the outer peripheral part of the ba...
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WO/2023/095871A1 |
An alumina powder satisfying the following relationship (1). Relationship (1): Rsp/(total surface area of alumina powder)≤12.0 Rsp and the total surface area of alumina powder in relationship (1) are obtained respectively using the fol...
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WO/2023/091188A1 |
A CMP system includes a polishing apparatus configured to polish a wafer and roll cleaning apparatus, which includes a rotating roll brush configured to roll against a surface of the wafer during operation, a fluid supply system configur...
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WO/2023/090052A1 |
The present invention pertains to a substrate processing device for processing substrates such as a wafer, and particularly to a substrate processing method and a substrate processing device which polish a bevel section of a substrate an...
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WO/2023/085007A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing...
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WO/2023/085471A1 |
The present invention provides a composite polishing pad for CMP, and a method for producing same. The composite polishing pad for CMP comprises: a polymer substrate layer including a plurality of protrusions formed on the upper surface ...
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WO/2023/085470A1 |
The present invention provides a composite polishing pad for CMP, and a method for producing same. The composite polishing pad for CMP comprises: a soft polymer substrate layer including a plurality of protrusions formed on the upper sur...
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WO/2023/085009A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A ch...
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WO/2023/085008A1 |
The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A ch...
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WO/2023/084951A1 |
An additive according to the present invention is configured so as to be used in chemical-mechanical polishing and contains a polymer (P). The polymer (P) has a structural unit (A) derived from a vinyl monomer having a -(LO)n-R group; th...
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WO/2023/083374A1 |
A wafer processing system (1) is provided. The system (1) includes a processing tool (10) comprising at least one grinding member (16) used to remove material from a wafer substrate (80). The system (1) also includes an electrolyte suppl...
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WO/2023/080014A1 |
The present invention provides: a polishing agent which contains cerium oxide and a metal salt, and which is capable of polishing a silicon nitride film at a high speed; and a polishing method. The present invention provides: a polishi...
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WO/2023/069198A1 |
The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical -mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP proce...
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WO/2023/069160A1 |
Exemplary slurry delivery systems may include a slurry source. The systems may include a slurry line coupled with the slurry source. The systems may include a slurry dispensing nozzle. The nozzle may include a lumen having an inlet that ...
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WO/2023/063213A1 |
[Problem] For the purpose of eliminating bumps in the peripheries of laser marks in a wafer polishing process, the present invention provides: a polishing composition that provides a flat polished surface; and a method for polishing a wa...
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WO/2023/058285A1 |
An information processing device (5) comprises: an information acquisition part (500) for acquiring crack generation state information that includes crack state information indicating a crack state at a time when crack has been generated...
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WO/2023/059999A1 |
The present invention discloses Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems that offer high and tunable Oxide: SiN and Oxide: Poly-Si removal selectivity, and low oxi...
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WO/2023/058751A1 |
The present invention reliably suctions a substrate regardless of the flatness of a surface to be suctioned of the substrate. A substrate suction member 330 includes: a porous member 334 having a substrate suction surface 334a for suct...
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WO/2023/056324A1 |
Synthesis of triazole- and/or triazolium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising triazole- and/or triazolium-based polymers; and wa...
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WO/2023/054386A1 |
Provided is a polishing composition that makes it possible to achieve an excellent polishing removal speed with respect to a polished object while improving the surface quality of a polished surface after polishing. The polishing composi...
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WO/2023/054385A1 |
The purpose of the present invention is to provide a polishing composition which can achieve an excellent polishing/removal rate for an object of interest. Provided is a polishing composition which is intended to be used for the polishin...
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WO/2023/054331A1 |
Provided is a thermoplastic polyurethane for a polishing layer in which the D hardness in a sheet with a thickness of 2 mm after saturating the sheet with water at a temperature of 50ºC and causing the sheet to swell is less than 50, an...
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WO/2023/055663A1 |
A chemical mechanical planarization (CMP) pad conditioner assembly includes a backing plate including at least one polymer and at least one additive. The at least one additive is present in an amount sufficient to result in a backing pla...
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WO/2023/055649A1 |
A CMP pad conditioner assembly includes a backing plate including a first face including a plurality of first mounting locations and a second face including a plurality of second mounting locations. A plurality of segments is secured to ...
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WO/2023/054562A1 |
A polishing device (10) comprises: a wafer-holding part (31) that holds a wafer (W) and brings the held wafer (W) into contact with a polishing surface (22a); a surface plate drive unit (24) or a head drive unit (34) that rotates the waf...
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WO/2023/049317A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt.% to about 10 wt.% silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (...
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WO/2023/048266A1 |
Provided is a polishing pad comprising a polishing layer that is a molded article of a polyurethane composition. The polyurethane composition contains 90-99.9 mass% of a thermoplastic polyurethane containing a non-alicyclic diisocyanate ...
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WO/2023/048265A1 |
A polishing pad including a polishing layer that is a molded product of a polyurethane composition, in which the polyurethane composition comprises 90 to 99.9% by mass of a thermoplastic polyurethane containing a non-alicyclic diisocyana...
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WO/2023/039779A1 |
A wear-resistant cutter wheel, comprising a cutter wheel body (10) and a cutter wheel shaft (20) connected to the cutter wheel body (10). A center hole (11) into which the cutter wheel shaft (20) is inserted is formed in the center of th...
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WO/2023/035247A1 |
Embodiments of the present disclosure provide a chemical-mechanical polishing device and a control method therefor. The chemical-mechanical polishing device comprises a polishing platform which is adapted to carry a polishing pad and dri...
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WO/2023/036012A1 |
A wafer polishing system, at least comprising one polishing unit (1), wherein the polishing unit (1) comprises a wafer transmission channel (2) and at least two polishing modules (3); and the polishing modules (3) are located on both sid...
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WO/2023/038800A1 |
Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a pol...
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WO/2023/036011A1 |
Disclosed in the present invention is a wafer polishing system, at least comprising a polishing unit, which comprises a fixed working station and two polishing modules, wherein the polishing modules are located on two sides of the fixed ...
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WO/2023/032716A1 |
Provided is a polishing composition which has an excellent ability to eliminate bulging around an HLM, and which can improve polishing rate. The polishing composition comprises abrasive grains, a basic compound, and water. In addition, t...
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WO/2023/032930A1 |
This polishing liquid contains cerium oxide abrasive grains and ammonium salt, and has a pH of at least 9.00. This polishing method uses the polishing liquid to polish a member to be polished that contains copper. This component manufact...
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WO/2023/030774A1 |
A method for grinding a semiconductor wafer, wherein the semiconductor wafer is machined in a material-removing manner by means of a grinding tool containing grinding teeth having a height h while supplying a cooling medium into a contac...
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WO/2023/034874A1 |
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto ...
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WO/2023/034573A1 |
A chemical mechanical polishing pad comprising a polishing portion, the polishing portion comprising: a polymeric body; a plurality of polymer particles embedded within the body of the polymeric body, wherein at least a portion of the pl...
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WO/2023/032715A1 |
Provided is a polishing composition which can achieve both maintenance of a polishing rate and an HLM periphery protrusion elimination ability. This polishing composition contains grains, a basic compound, a salt of a sulfur-containing a...
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WO/2023/032714A1 |
Provided is a polishing composition capable of achieving both maintenance of a polishing rate and elimination of bulging of the periphery of a hard laser mark (HLM), the polishing composition comprising abrasive grains, a basic compound,...
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WO/2023/032929A1 |
This polishing solution is for polishing a resin-containing polishing target member and contains an ether compound having a hydroxy group, and abrasive grains containing cerium oxide. This polishing method is for polishing a resin-contai...
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WO/2023/032928A1 |
Provided is a polishing liquid for polishing a member to be polished, said polishing liquid containing abrasive grains which include a cerium oxide, wherein the member to be polished contains a resin and particles which include a silicon...
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WO/2023/026814A1 |
The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium or molybdenum, while maintaining a stabl...
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WO/2023/026948A1 |
Provided are: a surface processing method for a GaN substrate, which is capable of performing surface processing on the GaN substrate in a short period of time; and a manufacturing method for a GaN substrate. This surface processing meth...
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WO/2023/027140A1 |
The purpose of the present invention is to provide a magnetic disk substrate and a method for manufacturing same, and a magnetic disk all of which make it possible to maintain high flatness, despite being thin, after a long-term use, be ...
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WO/2023/026813A1 |
Provided is a chemical mechanical polishing composition capable of chemically mechanically polishing a ruthenium- or molybdenum-containing semiconductor substrate while maintaining a stable polishing rate and suppressing the corrosion of...
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WO/2023/026778A1 |
The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while m...
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WO/2023/024190A1 |
Provided in the present application are a grinding disk and a substrate cleaning device. The grinding disk comprises a thickness self-adaptive layer, and a base layer and a grinding sheet which are fixed to two opposite surfaces of the t...
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WO/2023/026779A1 |
The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium, while maintaining a stable polishing ra...
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WO/2023/026780A1 |
Provided is a composition for chemical mechanical polishing, with which chemical mechanical polishing can be carried out while suppressing corrosion of ruthenium and maintaining a stable polishing speed for a semiconductor substrate cont...
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