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Title:
METHOD FOR PURIFYING TANTALUM SOURCE PRECURSOR
Document Type and Number:
WIPO Patent Application WO/2024/087339
Kind Code:
A1
Abstract:
The present invention relates to the field of purification of electron precursors, and in particular relates to a method for purifying a tantalum source precursor. The method comprises the following steps: (S.1) dispersing an adsorbent in an inert liquid medium without volatility to obtain an adsorption slurry; (S.2) dissolving a crude product tantalum source precursor in the adsorption slurry, to bring the crude product tantalum source precursor in contact with the adsorbent, such that impurities in the crude product tantalum source precursor are adsorbed by the adsorbent; (S.3) increasing the temperature of the adsorption slurry to the evaporation temperature of the tantalum source precursor to evaporate the tantalum source precursor so as to form a tantalum source precursor steam; and (S.4) collecting the tantalum source precursor steam and condensing same to obtain a high-purity tantalum source precursor. In the present invention, by changing the purification mode of the tantalum source precursor during the purification process of the tantalum source precursor, the purification steps are simplified, the purification efficiency and the purification effect are effectively improved, and the energy consumption during the purification process of the tantalum source precursor is also effectively reduced during the purification process.

Inventors:
ZHAO YI (CN)
LIU YING (CN)
SHI LIN (CN)
SHI YINI (CN)
ZHANG RONG (CN)
Application Number:
PCT/CN2022/138261
Publication Date:
May 02, 2024
Filing Date:
December 11, 2022
Export Citation:
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Assignee:
DALIAN CREDITCHEM ELECTRONIC MATERICAL CO LTD (CN)
International Classes:
C23C16/34; B01J20/30; B01J20/32; C23C16/455
Attorney, Agent or Firm:
ZHEJIANG KG IP LAW FIRM (CN)
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