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Title:
NEAR INFRARED LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2021/044824
Kind Code:
A1
Abstract:
Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-emitting semiconductor element.　GaN is used in the method for producing a near infrared light-emitting semiconductor element, and an active layer added in order to substitute Tm with Ga is formed on GaN in a reaction container at a growth rate of 0.1-30 μm/h without removal from said reaction container using an organometallic vapor phase growth method under temperature conditions of 600-1400ºC in a series of formation steps including formation of a p-type layer and an n-type layer. GaN is used in the near infrared light-emitting semiconductor element, and said near infrared light-emitting semiconductor element includes an active layer sandwiched between an n-type layer and a p-type layer on a substrate. An organometallic vapor phase growth method is used to add the active layer to the GaN in order to substitute Tm with Ga.

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Inventors:
ICHIKAWA SHUHEI (JP)
YOSHIOKA NAOKI (JP)
FUJIWARA YASUFUMI (JP)
TATEBAYASHI JUN (JP)
Application Number:
PCT/JP2020/030790
Publication Date:
March 11, 2021
Filing Date:
August 13, 2020
Export Citation:
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Assignee:
UNIV OSAKA (JP)
International Classes:
C30B25/16; C23C16/34; C30B29/38; H01L21/20; H01L21/205; H01L33/32
Domestic Patent References:
WO2018097102A12018-05-31
Foreign References:
US20100320443A12010-12-23
JP2009043807A2009-02-26
JP2002537647A2002-11-05
JP5388041B22014-01-15
JPH0150061B21989-10-27
Other References:
RODRIGUES ET AL.: "Spectroscopic analysis of the NIR emission in Tm implanted AlxGal-xN layers", JOURNAL OF APPLIED PHYSICS, vol. 120, August 2016 (2016-08-01), pages 081701, XP012211016, DOI: 10.1063/1.4961931
Attorney, Agent or Firm:
JODAI Tetsuji et al. (JP)
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