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WO/2020/081826A1 |
Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks - for example, used in a magnetic tunnel junction (MTJ) magnetoresi...
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WO/2020/075425A1 |
This magnetic sensor comprises: a thin-film magnet 20 in which two or more hard-magnetic-body layers 103a each configured from a hard magnetic body that includes Co, and a non-magnetic-body layer 103b that is configured from a non-magnet...
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WO/2020/075426A1 |
A magnetic sensor 1 is characterized by being provided with a thin film magnet 20 configured using an electrical conductor, a dielectric layer 104 configured using a dielectric and stacked on the thin film magnet 20, and a sensing portio...
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WO/2020/076759A1 |
A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate ele...
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WO/2020/071511A1 |
This magnetism detection device 1 comprises a transmission line 10 that has a wire-like first conductor 11 including a magnetic material, a signal generator 30 that applies a pulse to the transmission line 10 as an incident wave, and a c...
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WO/2020/068327A1 |
Embodiments of the disclosure relate to methods for fabricating structures used in memory devices. More specifically, embodiments of the disclosure relate to methods for fabricating MTJ structures in memory devices. In one embodiment, th...
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WO/2020/059542A1 |
Provided are a skyrmion circuit and a manufacturing method for a skyrmion circuit. This skyrmion circuit (1) includes a magnetic film (10) patterned with a circuit part (1A) in which skyrmions can exist, in which the skyrmions are propag...
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WO/2020/049780A1 |
In a rotation detection device 1 according to this invention, three accommodation parts 32 are provided in a case 3, and each of the accommodation parts 32 has a sensor element 4 attached thereto. Each accommodation part 32 has a referen...
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WO/2020/050329A1 |
Provided are a spintronics device, a magnetic memory, and an electronic apparatus with which it is possible to generate a large spin current without depending on any specific material. The spintronics device 1 is provided with: an electr...
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WO/2020/045143A1 |
The present invention provides a semiconductor device having a structure that is suitable for high integration. This semiconductor device is provided with: a storage element; a first contact which is electrically connected to this storag...
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WO/2020/045655A1 |
Provided is a magnetoresistance effect element provided with a quadruple interface, the magnetoresistance effect element having a small resistance-area product RA, a large magnetoresistance ratio, and a large effective magnetic anisotrop...
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WO/2020/043020A1 |
A perpendicularly magnetized MTJ device, comprising: a thermal stabilization reinforcement layer (104), a free layer (103), a tunnel layer (102) and a fixation layer (101) that are subsequently stacked on top of one another, wherein the ...
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WO/2020/040168A1 |
Provided is a magnetic field measurement device provided with: a magnetic sensor array in which a plurality of magnetic sensor cells capable of detecting a magnetic field in three axis directions are arranged in three dimensions, the mag...
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WO/2020/041582A1 |
Fabrication of a magnetoresistive device, comprising a magnetically fixed region (40) on at least one seed region (20, 25) on an electrically conductive region (15), involves forming a seed region (20'; 21), treating the seed region by e...
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WO/2020/040264A1 |
A Hall element (100) is provided with: a substrate (1); and a thin film (2) that serves as a magnetism sensing layer and that is provided on the substrate (1). The thin film (2) is formed from an amorphous ferromagnetic metal having a co...
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WO/2020/041546A1 |
Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic ...
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WO/2020/030901A1 |
The disclosed non-volatile memory cell comprises a storage layer of an electrically insulating polarisable material in which data is recordable as a direction of electric polarisation, preferably of ferroelectric material, arranged betwe...
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WO/2020/028250A1 |
The disclosed magnetoresistive device (200) includes a magnetically fixed region (214, 240) and a magnetically free region (250) positioned on opposite sides of a tunnel barrier region (230), and at least a first transition region (220) ...
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WO/2020/026637A1 |
Provided is a magnetoresistance effect element that has a small element size, that is capable of both increasing the thermal stability index Δ and reducing the writing current IC0, and that has an improved performance index Δ/IC 0(µA-...
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WO/2020/027152A1 |
Provided in one exemplary embodiment of the present invention is a method for processing a substrate. The substrate is provided with an etching layer and a mask. The mask is disposed on a first surface of the etching layer. This method i...
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WO/2020/023492A1 |
Spin-Hall (SH) material (135) is provided near free regions (110) of magnetoresistive devices that include magnetic tunnel junctions (110, 115, 120). Current flowing through such SH material injects spin current into the free regions suc...
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WO/2020/018624A1 |
A new type of two-terminal magnetic memory device, referred to as antiferromagnetic voltage-controlled memory (AVM) device is disclosed. Antiferromagnetic (AFM) materials have zero magnetization, which makes it immune to external magneti...
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WO/2020/013930A1 |
Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a bu...
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WO/2020/008853A1 |
A magnetic tunnel junction element (1), comprising: a fixed-magnetization layer (120) in which the direction of magnetization is fixed; a first insulation layer (130) provided on the fixed-magnetization layer and formed from an insulatin...
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WO/2020/003309A1 |
A planar Hall effect (PHE) sensor for measuring at an external magnetic field includes a plurality of elongated magnetic regions. Each magnetic region includes a ferromagnetic material that is magnetized along a longitudinal axis. The ma...
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WO/2019/244662A1 |
The present invention provides a magnetic storage element that has a multilayer structure which is composed of a fixed layer (102) that has a fixed magnetization direction, a storage layer (106) that has a reversible magnetization direct...
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WO/2019/239933A1 |
[Problem] To provide a magnetic sensor which, even when the magnetic field to be measured is faint, is capable of detecting said magnetic field by means of closed-loop control. [Solution] The present invention comprises magnetic body lay...
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WO/2019/230352A1 |
This spin-orbit torque magnetoresistance effect element is provided with a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, ...
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WO/2019/230341A1 |
This spin-orbit torque magnetization rotation element is provided with spin-orbit torque wiring, and a laminate body laminated on the spin-orbit torque wiring. The laminate body comprises, in order from the spin-orbit torque wiring side,...
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WO/2019/230351A1 |
This spin-orbit torque magnetoresistance effect element (101) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a nonmagnetic layer (3) positioned between the first ferromagnetic layer and the second fer...
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WO/2019/226231A1 |
Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with th...
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WO/2019/219941A1 |
Vertical Hall elements are disclosed which comprise a substrate (101) of a first conductivity type having a first surface (101a) and a second surface (101b), a well (102) of a second conductivity type disposed in and exposed on both surf...
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WO/2019/216179A1 |
A rotation detection device (1) is configured to detect the rotation of a rotary body (R). This rotation detection device is provided with a substrate (2) having a main surface (21) and a magnetism detection element (3) that is supported...
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WO/2019/217014A1 |
Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination wit...
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WO/2019/216099A1 |
Provided are a magnetoresistance effect element having high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element. A magnetoresistance effect element 1 is provi...
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WO/2019/213663A1 |
Advanced magnetic tunneling junctions (MTJs) that dramatically reduce power consumption (switching energy, ESw) while maintaining a reasonably high tunneling magnetoresistance (on/off ratio, TMR) and strong thermal stability at room temp...
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WO/2019/202169A1 |
A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal...
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WO/2019/203912A1 |
A magnetoresistive device (100) includes first (20) and second (50) ferromagnetic regions and an intermediate region (30) formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate r...
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WO/2019/203132A1 |
Provided are a magnetoresistive element that enables the aspect ratio of a junction to be reduced, a magnetic memory device, and a reading and writing method for the magnetic memory device. A magnetoresistive element 1 is provided with: ...
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WO/2019/198069A1 |
The invention relates to a technique for inducing local electric field controlled magnetization, despite the absence of magnetic components. There is provided a novel heterostructure (100), a semiconductor device thereof, or an array of ...
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WO/2019/194450A1 |
The present invention relates to a film quality inspection method for providing a stress evaluation scheme for inspection of film quality of a magnetic tunnel junction (MTJ) element in a spin-transfer torque magnetic random access memory...
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WO/2019/193871A1 |
Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic in...
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WO/2019/190629A1 |
A magneto resistive device (100) may include a tunnel barrier region, a magnetically fixed region (20) positioned on one side of the tunnel barrier region (30), and a magnetically free region (50) positioned on an opposite side of the tu...
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WO/2019/187800A1 |
Provided are a magnetoresistive element which has magnetic shape anisotropy and uses a recording layer having antiparallel coupling, and a magnetic memory. Said magnetoresistive element has a structure in which: a first magnetic layer ...
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WO/2019/190652A1 |
Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of mate...
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WO/2019/190552A1 |
An apparatus is provided which comprises: a magnet having a first portion and a second portion; a first structure, a portion of which is adjacent to the first portion of the magnet, wherein the first structure comprises a spin orbit mate...
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WO/2019/187674A1 |
Provided is a magnetoresistive element capable of achieving stable storage at higher temperatures even when the device size of the magnetoresistive element is small and demonstrating higher thermostability. This magnetoresistive element ...
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WO/2019/188450A1 |
An etching method, including: a step for readying a workpiece including a metal multilayer film which includes a magnetic tunnel junction, and a mask formed by a non-organic material on the metal multilayer film; and a step for etching t...
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WO/2019/188186A1 |
[Problem] To provide a magnetic sensor with which it is possible to detect a magnetic field by closed-loop control even when the magnetic field to be measured is faint. [Solution] The present invention is provided with: magnetic body lay...
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WO/2019/189895A1 |
Provided is a further optimized neural network circuit device. A synapse circuit 11 is formed of a pair of cross-coupled inverters 21, 22 and stores a synaptic coupling weight in a non-volatile manner. The inverter 21 is a series connect...
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