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WO/2021/016837A1 |
Provided in the present application are a magnetic tunnel junction, a manufacturing method, a spin diode, and a memory. With respect to the problem of a low tunnel polarization current transmission rate and a large RA of a conventional s...
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WO/2021/012940A1 |
Provided are a magnetic sensor and a manufacturing method thereof. The magnetic sensor includes at least one magnetic sensor structure, wherein, each magnetic sensor structure includes at least one magnetic sensor group (10), each magnet...
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WO/2021/014810A1 |
This non-volatile memory cell is configured of a non-volatile memory element 50 of a variable resistance type and a transistor TR for selection, wherein one terminal of the non-volatile memory element 50 is connected to one source/drain ...
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WO/2021/011144A1 |
Disclosed herein are exemplary magnetic tunnel junction structures for magnetic random access memory applications. A magnetic tunnel junction stack includes a structure blocking layer and a magnetic reference layer. The magnetic referenc...
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WO/2021/006219A1 |
A magnetic element (100) according to an embodiment comprises: a wiring layer (10) which extends in a first direction (x) and includes a ferromagnetic body; and a nonmagnetic layer (20) which is laminated in a second direction (z), onto ...
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WO/2021/000748A1 |
Provided is a magnetic tunnel junction, comprising a reference layer, a tunnel layer, a free layer, a covering layer, a polarization layer, and a first coupling layer that are sequentially arranged in a stacked manner, wherein the refere...
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WO/2021/002115A1 |
[Problem] To provide a random number generating unit and a computing system using the same, the random number generating unit comprising a magnetic tunnel junction element and enabling development of characteristics required for executio...
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WO/2021/000747A1 |
Provided are a magnetic storage device based on a spin orbit torque, and an SOT-MRAM storage unit. The magnetic storage device comprises: a spin orbit torque supply line, a magnetic tunnel junction located on a surface of one side of the...
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WO/2020/258799A1 |
The present invention provides a method of preparing a self-aligning MRAM bottom electrode, comprising: providing a substrate, said substrate sequentially comprising a metal interconnect layer, a first barrier layer, and a dielectric lay...
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WO/2020/259220A1 |
A method of preparing an MRAM bottom electrode (208), comprising: (S101) providing a substrate, said substrate sequentially comprising a metal interconnect layer (201), a first barrier layer (202), and a dielectric layer (203), a bottom ...
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WO/2020/264349A1 |
A magnetic memory array having a source-plane electrically connected with an array of channel selectors in two-dimensions. The array of channel selectors can be arranged in rows and columns with both the rows and columns being electrical...
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WO/2020/261736A1 |
In the present invention, with regard to a selection element that is provided with a plurality of switch layers and that performs selection control in accordance with an applied voltage, the usage-possible period of the selection element...
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WO/2020/258390A1 |
Provided by the present invention are a magnetism adjustable composite metal phthalocyanine thin film and a preparation method therefor. The metal phthalocyanine comprises transition metal phthalocyanine and rare earth metal phthalocyani...
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WO/2020/256776A1 |
A MRAM memory cell comprises a SHE layer, a magnetic bit layer with perpendicular anisotropy and an Oersted layer. The magnetic bit layer has a switchable direction of magnetization in order to store data. Data is written to the MRAM mem...
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WO/2020/256884A1 |
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a j...
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WO/2020/255448A1 |
A semiconductor storage device (20) includes a first magnetoresistive random access memory (21) and a second magnetoresistive random access memory (22) which are two types of magnetoresistive random access memories accessed by an designa...
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WO/2020/250165A1 |
The present invention relates to the methods of formulating and using pastes or inks or glues made of electrically conductive and magnetically polarizable materials, bound by a polymeric matrix. The products of the invention (pastes / in...
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WO/2020/250489A1 |
A magnetic sensor (1) is provided with: an angle sensor (10) that includes a plurality of first magnetoresistance elements (111-114, 121-124) and outputs data in accordance with an angle formed between the direction of an external magnet...
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WO/2020/246553A1 |
Provided are: a magnetoresistance effect element that has a magnetic body comprising an alloy having a stable bcc structure having Co as a main component thereof, has an excellent tunnel magnetoresistance effect ratio, and can be put int...
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WO/2020/242534A1 |
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive word line layers located over a substrate, and a plurality of vertical memory strings. Each vertical memory string includes ...
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WO/2020/240941A1 |
A magnetic sensor 1 comprises a non-magnetic substrate and a sensing element unit 31 that is provided on the substrate. The sensing element unit 31 is constituted by a soft magnetic body, has a longitudinal direction and a lateral direct...
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WO/2020/242213A1 |
The present invention provides a magnetic memory device and an operation method therefor, the present invention comprising: a magnetic layer comprising Fe3GeTe2; end electrodes spaced apart in a first direction on the magnetic layer; a v...
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WO/2020/233456A1 |
The present invention provides an MRAM electrode, comprising an isolation layer, an electrode layer, and a covering layer which are stacked, wherein one side surface of the isolation layer is close to an MTJ free layer, the electrode lay...
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WO/2020/228579A1 |
Provided in the present invention is a manufacturing method for an MRAM device, comprising: sequentially forming an MTJ component layer, a first hard mask layer, and a second hard mask layer on a base electrode; patterning the second har...
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WO/2020/230877A1 |
A domain wall motion element according to an embodiment is provided with a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and capable of magnetic recording, a non-magnetic layer, a first conductiv...
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WO/2020/230771A1 |
A magnetic domain wall moving element of the present embodiment comprises: a magnetic recording layer that extends in a first direction and includes a ferromagnetic body; and a first electrically conductive layer and a second electricall...
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WO/2020/226293A1 |
A magnetic tunnel junction device according to one embodiment of the present invention comprises: a fixed magnetic layer having a fixed magnetization direction; a free magnetic layer disposed on the fixed magnetic layer and switching a m...
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WO/2020/223549A1 |
A method for manufacturing a magnetic memory element structure using a Ru hard mask and a post pillar thermal annealing process. A Ru hard mask is formed over a plurality of memory element layers and an ion milling is performed to transf...
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WO/2020/222884A1 |
A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between ...
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WO/2020/215610A1 |
A magnetic tunnel junction device of a magnetic random access memory, comprising a reference layer (13), a tunneling dielectric layer (14), and a memory layer (15) stacked in sequence from bottom to top, wherein the memory layer (15) is ...
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WO/2020/219555A1 |
A magnetic memory element having a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces paras...
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WO/2020/215403A1 |
A multifunctional self-spinning electronic logic gate device. The device comprises: a magnetic tunnel junction (30), the magnetic tunnel junction (30) sequentially comprising a reference layer (31), a tunneling insulation layer (32), and...
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WO/2020/219140A1 |
A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region. The intermediate region ...
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WO/2020/213596A1 |
[Problem] The present invention addresses the problem of providing a quantum bit cell having an easy-to-integrate structure, and a quantum bit integrated circuit. [Solution] This quantum bit cell is characterized by comprising: a spin to...
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WO/2020/213844A1 |
A skyrmion element according to an embodiment of the present invention comprises: a magnetic pattern comprising a metal layer and a magnetic layer, which have a Dzyaloshinskii–Moriya interaction, through which an in-plane current flows...
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WO/2020/208907A1 |
A magnetoresistive element (10) is provided with a first element portion (11) including a first unit element (13), and a second element portion (12) including a second unit element (14). The first element portion (11) and the second elem...
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WO/2020/205236A1 |
The method may be used for measuring an electric property of a magnetic tunnel junction used in an embedded MRAM memory for example. The method uses a multi point probe with a plurality of probe tips for contacting a designated area of t...
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WO/2020/197312A1 |
A fluxgate magnetometer and a manufacturing method therefor are disclosed. Lower coils, a lower structure, a magnetic bodies, an upper insulating film, and upper coils are sequentially stacked on a substrate insulating film on a substrat...
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WO/2020/195151A1 |
Provided are: a semiconductor device which is capable of efficiently increasing the capacity of a storage element to be mounted while saving space; and an electronic apparatus comprising the same. The semiconductor device comprises: a st...
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WO/2020/194660A1 |
This memory element has: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer which is interposed in a first direction between the first ferromagnetic layer and the second ferromagnetic layer; a first wiring wh...
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WO/2020/198081A1 |
A physically unclonable function is an object that has characteristics that make it extremely difficult or impossible to copy. An array of randomly dispersed hard (magnetized) and soft (non-magnetized) magnetic particles that may be cond...
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WO/2020/189147A1 |
This semiconductor circuit comprises: a first storage element which includes a first terminal, a second terminal connected to a first node, and a tunnel barrier film, and which is capable of storing information by destroying the tunnel b...
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WO/2020/183965A1 |
This solid-state imaging device comprises: a first structure that has a first substrate, and a pixel region formed on the first substrate, for which a plurality of pixels that output pixel signals according to the amount of charge genera...
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WO/2020/185346A1 |
A buffer layer (104) can be used to smooth the surface roughness of a galvanic contact layer (102) (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered ...
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WO/2020/179493A1 |
This oscillator 100A comprises a spin current source 110 and a free layer 111 that is joined to the spin current source 100. The free layer 111 has a magnetization-hard axis parallel to a quantization axis of a spin current injected by t...
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WO/2020/180977A1 |
A quantum Hall resistance apparatus is to improve resistance standards and includes a substrate, a graphene epitaxially grown on the substrate and having a plurality of first contact patterns at edges of the graphene, a plurality of cont...
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WO/2020/176640A1 |
Patterned magnetoresistive random access memory (MRAM) stacks are formed by performing a main etch through a plurality of MRAM layers disposed on a substrate, where the main etch includes using ion beam etching (IBE). After the main etch...
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WO/2020/170746A1 |
A magnetic sensor 1 comprises: a thin film magnet 20 that is formed from a conductive material; a dielectric layer 104 that is formed from a dielectric and is layered on the thin film magnet 20; and a sensing part 30 which has a sensing ...
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WO/2020/167405A1 |
Implementations of the present disclosure generally relate to a memory device. More specifically, implementations described herein generally relate to a SOT-MRAM. The SOT-MRAM includes a memory cell having a magnetic storage layer dispos...
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WO/2020/166722A1 |
A spintronics element (100) is provided with an antiferromagnetic layer (20) and an MTJ element (30). The antiferromagnetic layer (20) is made from a canted antiferromagnetic material having a canted magnetic moment and a weak magnetizat...
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