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WO/2022/027608A1 |
A memory device includes a memory cell comprising a bottom electrode, a top electrode, and a dielectric layer interposed between the bottom electrode and the top electrode. The bottom electrode has a first width W1. The top electrode has...
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WO/2022/026057A1 |
A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode....
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WO/2022/021606A1 |
Provided are a memory and a memory reading circuit. The memory comprises a storage unit and a reference resistor. The storage unit comprises a magnetic storage tunnel junction, wherein the magnetic storage tunnel junction comprises a fir...
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WO/2022/021344A1 |
A magnetic random access memory and device, and a read-write control method. The magnetic random access memory comprises: a ferroelectric layer (110); a dielectric layer (120) provided above the ferroelectric layer (110); and a magnetic ...
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WO/2022/021790A1 |
A storage unit (20) based on a spin-orbit torque, the storage unit comprising a synthetic spin-orbit torque effect layer and two magnetic tunnel junctions (203, 204), wherein the synthetic spin-orbit torque effect layer comprises a first...
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WO/2022/021620A1 |
Provided are a method for preparing a storage bit and a method for preparing an MRAM. The preparation method comprises the step of forming a magnetic tunnel junction. After the step of forming a magnetic tunnel junction, the preparation ...
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WO/2022/021619A1 |
A manufacturing method for a memory cell and a manufacturing method for an MRAM. The manufacturing method for a memory cell comprises a step of forming a magnetic tunnel junction (30), and after the step of forming a magnetic tunnel junc...
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WO/2022/021169A1 |
A magnetic tunnel junction and a storage unit. The magnetic tunnel junction comprises a first electrode layer (210), a first fixed magnetic layer (220), a tunneling insulating layer (230), a free magnetic layer (240), a covering layer (2...
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WO/2022/016626A1 |
The present disclosure provides a spin electronic device, an SOT-MRAM storage unit, a storage array, and a storage and calculation integrated circuit. The spin electronic device comprises a ferroelectric/ferromagnetic heterostructure, a ...
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WO/2022/018978A1 |
In the present invention, first magnetoresistive elements (120a, 120b) have an outer peripheral edge and an inner peripheral edge. A magnetic member (40) is positioned in a region inward of the inner peripheral edge of the first magnetor...
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WO/2022/014529A1 |
Provided are a layer structure for a magnetic memory element, the layer structure having improved controllability of a drive current required for domain wall displacement and that of domain wall displacement, and a magnetic memory elemen...
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WO/2022/011878A1 |
Provided are a memory bit preparation method and an MRAM preparation method. The memory bit preparation method comprises the following steps: providing a first substrate having a first surface, wherein a first tunnel junction material la...
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WO/2022/012790A1 |
The present invention relates to a magnetoelectric device (D), comprising: - a magnetoelectric element (Me); and - an electric voltage source (PS) configured and arranged to induce on the magnetoelectric element (Me), at least at room te...
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WO/2022/010577A1 |
The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall layer, a first free layer, a gap l...
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WO/2022/011067A1 |
Disclosed herein are devices, systems, and methods for monitoring single-molecule biological processes using magnetic sensors and magnetic particles (MNP). A MNP is attached to a biopolymer (e.g., a nucleic acid, protein, etc.), and moti...
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WO/2022/005639A1 |
The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, ...
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WO/2021/262241A1 |
A refractory metal-containing etch stop layer, a ruthenium etch stop layer, and a conductive material layer can be sequentially formed over an electrode layer and a selector material layer. A sequence of anisotropic etch processes can be...
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WO/2021/258712A1 |
A magnetic memory device and a writing method therefor, and a logic device. The magnetic memory device comprises a heavy metal layer (10) and a magnetic tunnel junction; the magnetic tunnel junction comprises a free layer (11) stacked on...
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WO/2021/258346A1 |
A spin-orbit torque magnetic random access memory (SOT-MRAM) cell, a memory array, and a memory. The SOT-MRAM cell comprises a magnetic tunnel junction and a gate; the gate is a two-dimensional material-based gate; the magnetic tunnel ju...
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WO/2021/257328A1 |
A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and per...
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WO/2021/253600A1 |
A magnetic sensor of monolithic integrated three-axis tunnel magnetoresistance (TMR) and a preparation method therefor. The sensor comprises: a substrate, first TMR units (1), second TMR units (2), third TMR units (3), fixed resistors (4...
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WO/2021/250924A1 |
A magnetic sensor chip (10) is provided with: a base plate (11) having a first main surface (11a) and a magnetoresistive element section (20) having a prescribed magnetic-sensing direction parallel to the first main surface (11a). The ma...
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WO/2021/248597A1 |
Disclosed in the present invention are an isolation structure applied to a current sensor, and a current sensor. The isolation structure comprises, sequentially from bottom to top, a current conductor layer, an insulating dielectric laye...
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WO/2021/251003A1 |
The present invention provides a magnetoresistive effect element which is suppressed in the element resistance (RA), while having a relatively high magnetoresistive ratio (MR ratio). This magnetoresistive element is provided with: a firs...
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WO/2021/248089A1 |
A method for producing doped, van der Walls ferromagnetic materials is disclosed. Such materials can take the form of monolayer iron-doped transition metal dichalcogenides. Such materials are useful for the manufacture of semiconductors,...
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WO/2021/245768A1 |
An embodiment relates to a magnetoresistive element (100) comprising: a wire (30) extending in a first direction; a stack (10) including a first ferromagnetic layer (11) connected to the wire; a first electrically conductive portion (40)...
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WO/2021/246289A1 |
[Problem] To facilitate modification of the number or layout of magnetic field detection devices when the magnetic field detection devices are disposed in an array. [Solution] A magnetic field detection device 1 is provided with: a cance...
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WO/2021/240284A1 |
An analog Magnetoresistive Random Access Memory (MRAM) cell is provided. The analog MRAM cell includes a magnetic free layer having a first domain having a first magnetization direction, a second domain having a second magnetization dire...
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WO/2021/240796A1 |
This magnetic film comprises a ferromagnetic layer, wherein: the ferromagnetic layer has a thickness or width in a first direction that is longer than the thickness or width in other directions, and has a crystalline structure that is a ...
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WO/2021/236200A2 |
Voltage-controlled spin field effect transistors ("spin transistors") and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detectio...
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WO/2021/231067A1 |
Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random -access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally ...
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WO/2021/223207A1 |
A spin orbit torque magnetic device, a magnetic tunnel junction device, and a magnetic memory. The spin orbit torque magnetic device comprises: a first magnetic free layer (101), a metal coupling layer (102), and a second magnetic free l...
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WO/2021/221096A1 |
Provided is an in-plane magnetized film with which magnetic performance such as a coercive force Hc of at least 2.00 kOe and a residual magnetization Mrt per unit area of at least 2.00 memu/cm2 can be achieved without performing heating-...
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WO/2021/221095A1 |
The present invention provides an in-plane magnetized film multilayer structure which is capable of achieving magnetic properties, namely a coercivity Hc of 2.00 kOe or more and a remanent magnetization Mrt per unit area of 2.00 memu/cm2...
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WO/2021/221726A1 |
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide la...
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WO/2021/220080A1 |
Systems and methods for eliminating or mitigating T-effects on Hall sensors. A system may comprise a magnet-coil arrangement for providing a relative movement therebetween to obtain a relative position, a Hall sensor for sensing the rela...
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WO/2021/212779A1 |
Provided are a spin-obit torque magnetoresistive random-access memory (SOT-MRAM) and a preparation method therefor. The memory comprises: a substrate, a dielectric layer above the substrate, a conductive material layer located at the int...
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WO/2021/212780A1 |
The present invention provides a magnetic tunnel junction and a manufacturing method therefor. The magnetic tunnel junction comprises a first seed crystal layer, a second seed crystal layer, a magnetic pinned layer, a barrier layer, a ma...
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WO/2021/214570A1 |
A memory device is provided that includes at least one MTJ pillar which can have a ternary program state as compared to a binary program state in a conventional device. The MTJ pillar contains a lower MTJ structure that includes at least...
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WO/2021/210475A1 |
A semiconductor storage device according to one embodiment of the present disclosure comprises a plurality of memory cells and a control circuit. Each memory cell includes a magnetization inversion storage element and a first switch elem...
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WO/2021/206996A1 |
A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO laye...
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WO/2021/199233A1 |
This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic layer h...
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WO/2021/201772A1 |
The present invention relates, in general terms, to magnetoresistance sensors and methods of fabrication thereof. The magnetoresistance sensor comprises a continuous graphene layer disposed on a corrugated and/or stepped surface of a sub...
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WO/2021/189295A1 |
Provided are a magnetic random access memory and a data writing method therefor. The magnetic random access memory comprises a spin-orbit torque layer and at least one magnetic tunnel junction provided on the spin-orbit torque layer. The...
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WO/2021/193488A1 |
According to an embodiment, a magnetic device includes a first electroconductive member and a first laminate. The first electroconductive member includes a first portion, a second portion, and a third portion between the first portion an...
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WO/2021/192128A1 |
A substance capable of exhibiting the delivery phenomenon of weyl fermion comprises SrRuO3 and is known to have a ratio of a resistivity ρ at 300 K to a resistivity ρ at 4 K, i.e., [residual resistance ratio RRR ≡ ρ(300K)/ρ(4K)], o...
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WO/2021/191734A1 |
Provided is a storage device having high storage capacity and low power consumption. The storage device comprises a first layer and a second layer which includes the first layer. The first layer includes a circuit, and the second layer i...
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WO/2021/186968A1 |
A semiconductor device provided with a nonvolatile memory cell array formed by arraying pluralities of first and second memory cells which include first and second memory elements 11, 12 comprising variable-resistance nonvolatile memory ...
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WO/2021/186693A1 |
A magnetoresistance effect element (101) according to the present embodiment comprises a first ferromagnetic layer (30), a second ferromagnetic layer (50), and a nonmagnetic metal layer (40) positioned between the first ferromagnetic lay...
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WO/2021/188134A1 |
A magnetoresistive memory device includes a magnetic tunnel junction comprising a free layer, a reference layer, and an insulating tunnel barrier layer located between the free layer and the reference layer, a perpendicular magnetic anis...
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