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WO/2021/181651A1 |
An embodiment relates to a magnetization rotational element comprising a spin orbit torque wire (20), a first ferromagnetic layer (1) laminated on the spin orbit torque wire, and a low-resistance layer (30) laminated in a region not over...
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WO/2021/181203A1 |
A magnetoresistive element (2) for a two-dimensional magnetic field sensor, comprising: a ferromagnetic reference layer (21) having a fixed reference magnetization (210), a ferromagnetic sense layer (23) having a sense magnetization (230...
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WO/2021/181172A1 |
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack (204), forming a spin conducting layer (206) on the first magnetic tunnel junction stack (...
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WO/2021/183049A1 |
Disclosed herein is a compound comprising: a plurality of layers of a transition metal dichalcogenide or a similar semiconductor material, where between any two adjacent layers there is a first set of vacancies; and a transition metal oc...
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WO/2021/182778A1 |
Disclosed is a logic element using spin-orbit torque. Two magnetic tunnel junctions have mutually opposite stator magnetizations. The direction of current flowing through a nonmagnetic metal layer acts as an input, and the resistance sta...
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WO/2021/178309A1 |
Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the...
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WO/2021/176646A1 |
A magnetic according array according to the present embodiment has a plurality of units. The units each have a first magnetoresistance effect element, a second magnetoresistance effect element and a write transistor. The first magnetores...
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WO/2021/176908A1 |
A memory cell array according to the present disclosure comprises a plurality of memory cells 11 arrayed in a first direction and a second direction different from the first direction, wherein each of the memory cells 11 is composed of a...
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WO/2021/176656A1 |
A magnetic according array (200) according to the present embodiment comprises a plurality of spin elements (100), a first reference element (101) and a second reference element (102). The plurality of spin elements, the first reference ...
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WO/2021/176644A1 |
A magnetic recording array (200) according to the present embodiment comprises a plurality of spin elements (100) and a shared transistor (STr) that is connected to an adjacent first spin element and second spin element. Each of the plur...
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WO/2021/171101A1 |
A bottom pinned magnetic tunnel junction (MTJ) stack containing a top magnetic free layer having a high perpendicular magnetic anisotropy field is provided which can be used as an element/component of a spin-transfer torque (STT) MRAM de...
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WO/2021/167636A1 |
The present disclosure generally relates to a tunnel magnetoresistive (TMR) device. The TMR device includes a high radiation reflective layer between the bottom shield of the TMR device and the magnetic seed layer. The high radiation ref...
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WO/2021/166892A1 |
A magnetic domain wall moving element of the present invention comprises: a magnetic recording layer which includes a ferromagnetic body; a non-magnetic layer stacked onto the magnetic recording layer; and a magnetization reference layer...
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WO/2021/166137A1 |
A magnetic domain wall motion element according to the present invention comprises a magnetic recording layer composed of a ferromagnetic body, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference...
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WO/2021/166155A1 |
This magnetization rotational element comprises a spin-orbit torque wiring and a first ferromagnetic layer. The spin-orbit torque wiring includes: a first wiring region and a second wiring region which extend in a first direction; and a ...
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WO/2021/163908A1 |
Magnetic memory devices and methods are provided. In one aspect, a memory device may comprise a control circuitry and at least one array of memory structures. Each memory structure may comprise a metal layer and a first magnetic tunnel j...
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WO/2021/161645A1 |
A testing apparatus 100 for testing a wafer 10 to be tested, on which is formed a device 12 to be tested, including a magnetoresistive memory or a magnetic sensor. The wafer 10 be tested is placed on a stage 130 in a testing step. A prob...
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WO/2021/162081A1 |
The purpose of the present invention is to provide a sputtering target material having exceptional cracking resistance, and a method for manufacturing said sputtering target material. Provided is a sputtering target material the substanc...
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WO/2021/161644A1 |
A testing device 100 tests a wafer 10 to be tested which has formed thereon a device 12 to be tested including a magneto-resistive memory or a magnetic sensor. In a testing step, the wafer 10 to be tested is mounted on a stage 130. In th...
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WO/2021/159568A1 |
A magnetic tunnel junction and a forming method therefor, and a magnetic random access memory. The magnetic tunnel junction sequentially comprises, from bottom to top, a first ferromagnetic layer (10), an oxide barrier layer (20), a seco...
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WO/2021/161700A1 |
This variable-resistance non-volatile memory element 11 has a layered structure 30 including at least a magnetized fixed layer 31, an intermediate layer 32, and a storage layer 33, a non-magnetic material 36 being dispersed in the magnet...
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WO/2021/158505A1 |
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnet...
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WO/2021/157072A1 |
A magnetic recording array (200) according to one embodiment of the present invention is provided with: a plurality of spin elements (100) which are arranged in a matrix form, while each having a wiring line (20) and a multilayer body (1...
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WO/2021/156681A1 |
A magnetic tunnel junction (MTJ) stack structure having an enhanced write performance and thermal stability (i.e., retention) is provided which can be used as an element/component of a spin-transfer torque (STT) MRAM device. The improved...
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WO/2021/153853A1 |
Disclosed is a magnetic domain wall logic device comprising: a nonmagnetic layer; and a magnetic layer formed on the nonmagnetic layer. The magnetic layer comprises: a perpendicular magnetic anisotropy region; and a horizontal magnetic a...
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WO/2021/153920A1 |
The present invention relates to a magnetic tunnel junction device and an operating method therefor. A free layer may undergo a magnetization inversion induced through a spin orbit torque or a spin transfer torque, and a pinned layer may...
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WO/2021/152403A1 |
Large grain metal bitlines are formed above magnetic tunnel junction pillars used as MRAM bits without materially affecting the magnetic properties of the magnetic tunnel junctions. A copper or copper alloy bitline having relatively smal...
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WO/2021/149242A1 |
A spin element according to the present embodiment comprises: a wiring (20); a laminated body (10) including a first ferromagnetic layer (1) laminated on the wiring; a first conductive part (30) and a second conductive part (40) sandwich...
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WO/2021/149365A1 |
Deterioration of the magnetic performance of a magnetoresistance effect element is suppressed. This semiconductor device comprises a magnetoresistance effect element that has: a first magnetic film; a tunnel barrier film provided on this...
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WO/2021/150818A1 |
The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electricall...
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WO/2021/149241A1 |
A spin element according to an embodiment comprises wiring (20), a stack (10) which includes a first ferromagnetic layer (1) stacked on the wiring, a first conductive part (30) and a second conductive part (40) which sandwich the first f...
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WO/2021/150286A1 |
A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal la...
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WO/2021/149586A1 |
According to one embodiment, this magnetic device includes: a first element; a first transistor of a first conductivity type; a second transistor of a second conductivity type; and first to third wiring lines. The first element includes ...
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WO/2021/145132A1 |
This computation device according to one embodiment comprises a computation element unit and a control unit. The computation element unit includes first and second elements. The first element includes a first conductive member and a firs...
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WO/2021/142817A1 |
Provided in the present invention is a magnetic memory, comprising: a first anti-ferromagnetic layer used for providing an exchange bias field; an insertion layer arranged on the anti-ferromagnetic layer and used for blocking diffusion o...
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WO/2021/142681A1 |
A magnetic random access memory and an electronic device, which are used to increase the storage density of a magnetic random access memory. The magnetic random access memory comprises a plurality of structural units and a plurality of v...
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WO/2021/140934A1 |
Provided are a magnetic laminated film capable of reducing the roughness of a heavy metal layer and reducing power consumption, and a magnetic memory element, a magnetic memory, and an artificial intelligence system using the magnetic la...
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WO/2021/133764A1 |
Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The THz emitters include a metal layer that...
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WO/2021/130796A1 |
The magnetoresistive sensor according to the present embodiment comprises: a spin orbital torque wiring that extends in a first direction; a stack that is stacked on the spin orbital torque wiring and includes a first ferromagnetic layer...
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WO/2021/131401A1 |
A magnetic sensor according to the present invention comprises: a non-magnetic substrate; and a sensing element 31 that has a lengthwise direction and a widthwise direction, has uniaxial magnetic anisotropy in a direction intersecting th...
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WO/2021/131400A1 |
This magnetic sensor is provided with: multiple sensing elements 31 which comprise a soft magnetic layer 105 having a long direction and a short direction and a conductor layer having higher conductivity than the soft magnetic layer 105 ...
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WO/2021/131606A1 |
[Problem] To reduce the 1/f size of a magnetic sensor. [Solution] A magnetic sensor according to the present invention comprising: a sensor chip 10 that includes a magnetosensitive element R; external magnetic bodies 21, 22 that form a m...
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WO/2021/131402A1 |
A magnetic sensor comprising: a sensitive layer configured from a soft magnetic material having uniaxial magnetic anisotropy, the sensitive layer sensing a magnetic field using a magnetic impedance effect; and a magnet layer configured f...
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WO/2021/131605A1 |
[Problem] To increase the magnetic bias applied to a magnetoresistive element in a magnetic sensor equipped with a magnetic resistance strip and a ferromagnetic film by magnetically coupling the magnetic resistance strip and the ferromag...
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WO/2021/123971A1 |
A magnetic tunnel junction (MTJ) device (200) includes a cylindrically-shaped pillar structure and a first ferromagnetic layer (204) disposed on at least a portion of the pillar structure. The first ferromagnetic layer (204) exhibits a m...
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WO/2021/124517A1 |
This magnetoresistive effect element (10) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a non-magnetic layer (3) that is arranged between the first ferromagnetic layer and the second ferromagnetic la...
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WO/2021/114571A1 |
A two-dimensional material-based gate, a memory unit, an array, and an operating method thereof, the gate comprising: a stack unit. The stack unit is a metal-two-dimensional semiconductor-metal structure, comprising a two-dimensional sem...
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WO/2021/109582A1 |
Provided are a magnetic memory and a preparation method therefor. The magnetic memory comprises at least one hybrid storage array, the hybrid storage array comprising an STT-MRAM array and an SOT-MRAM array arranged adjacent to each othe...
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WO/2021/109808A1 |
Provided are a memory and a manufacturing method therefor. The memory comprises a memory unit, active regions, gate electrodes, an interconnection metal layer and a shallow trench isolation region. The shallow trench isolation region is ...
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WO/2021/103874A1 |
The present invention provides an MTJ device manufacturing method. The method comprises: depositing a reference layer thin film, a barrier layer thin film, and a free layer thin film on a substrate; depositing a first metal oxide thin fi...
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