Title:
SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/075405
Kind Code:
A1
Abstract:
This solid-state imaging device comprises: a first pixel that is arranged on a first surface side serving as a light incident side of a substrate, and that has a first photoelectric conversion element for converting light to a charge; a first transistor that is arranged, at a position corresponding to the first pixel, on a second surface side opposite the first surface of the substrate, that has a first gate electrode, and that has a pair of main electrodes, one of which is electrically connected to the first photoelectric conversion element; a floating diffusion that is arranged on the second surface side of the substrate and that is electrically connected to the other main electrode of the first transistor; and a low dielectric constant region that is arranged between the floating diffusion and the first gate electrode opposite the same, and that has a lower dielectric constant than that of a non-opposing region.
Inventors:
TANAKA DAICHI (JP)
TOMITA CHIHIRO (JP)
TOMITA CHIHIRO (JP)
Application Number:
PCT/JP2023/029670
Publication Date:
April 11, 2024
Filing Date:
August 17, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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