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WO/2022/243908A2 |
A resonator device comprising a layer of piezoelectric material (2) provided with one pair of end faces (3, 4) in such a way as to selectively generate an acoustic wave propagating from said faces (3, 4); at least one layer of metallic m...
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WO/2022/242776A1 |
A resonator, which comprises a resonance layer, a substrate and a barrier layer, the barrier layer being located on the substrate, the barrier layer and the substrate constituting a cavity, the cavity being used for accommodating the res...
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WO/2022/240642A1 |
An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer...
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WO/2022/239719A1 |
A passive electronic component support substrate 1 comprises: a semiconductor substrate 10; a charge-trapping layer 11 provided on the semiconductor substrate 10 and having a high density of crystal defects in relation to the semiconduct...
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WO/2022/239630A1 |
Provided is a piezoelectric bulk wave device capable of suppressing ripples in frequency characteristics. The piezoelectric bulk wave device 10 according to the present invention comprises: a support member 13 including a silicon subst...
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WO/2022/241033A1 |
Apparatus and associated methods relate to forming an epitaxial layer of aluminum (14') on an aluminum-nitride compound (12'). The aluminum is epitaxially grown on the crystalline aluminum- nitride compound by maintaining temperature of ...
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WO/2022/239601A1 |
A switch device (10) comprises: a common terminal (Pan); a switch circuit (1) that switches electrical conduction between terminals (Ps10 and Ps101); a switch circuit (2) that switches electrical conduction between terminals (Ps20 and Ps...
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WO/2022/233074A1 |
The present application relates to a piezoelectric transducer preparation method and a piezoelectric transducer. The method comprises: first, preparing a bottom acoustic reflection layer on a carrier wafer; then preparing a top acoustic ...
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WO/2022/236185A2 |
Acoustic resonator devices, filters, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a f...
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WO/2022/228486A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer. An overlapping area of the acoustic mirror, the bottom electrode, the...
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WO/2022/230723A1 |
The present invention provides an elastic wave device with which fractional bandwidth can easily be adjusted and that is not susceptible to element capacity being decreased. The elastic wave device 10 according to the present invention...
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WO/2022/230681A1 |
The present invention mitigates transmission of heat generated in an electronic component to a mounting board. A high frequency module (1) is provided with a mounting board (3), a first electronic component (4A), a first resin layer (51)...
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WO/2022/226914A1 |
The present invention provides a piezoelectric MEMS silicon resonator having a beam structure, a forming method therefor, and an electronic device. The forming method comprises: providing, as a substrate, an SOI silicon wafer having a lo...
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WO/2022/228385A1 |
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; a resonant structure, which comprises a piezoelectric layer, a bottom electrode, and a top electrode; and an acoustic mirror. A support layer is pr...
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WO/2022/227928A1 |
The present invention relates to a bulk acoustic resonator, wherein a piezoelectric layer of the resonator is a single-crystal lithium niobate piezoelectric layer or a single-crystal lithium tantalate piezoelectric layer; and the electro...
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WO/2022/226912A1 |
Disclosed in the present invention are a resonator and a method for forming same, and an electronic device. The method comprises: with regard to an SOI wafer comprising a top silicon layer, a buried oxide layer and a base silicon layer, ...
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WO/2022/230683A1 |
Provided is a high-frequency module capable of improving the heat dissipation of first electronic components. A high-frequency module (1) comprises a mounting substrate (3), first electronic components (17, 12A), a first resin layer (51)...
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WO/2022/226911A1 |
Disclosed in the present invention are a piezoelectric MEMS silicon resonator and a forming method therefor, and an electronic device. The piezoelectric MEMS silicon resonator comprises: a silicon substrate; a lower cavity, wherein a top...
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WO/2022/226913A1 |
Disclosed in the present invention are a piezoelectric MEMS silicon resonator and an electronic device. The piezoelectric MEMS silicon resonator comprises a cantilever beam provided in a first direction; and the cantilever beam comprises...
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WO/2022/229159A1 |
Electroacoustic devices (502) with a capacitive element (504) and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device (502) above a first region (506b) of a substrate, and forming a...
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WO/2022/230288A1 |
Provided is an elastic wave device that is not prone to deterioration of device characteristics. This elastic wave device 1 comprises a first layer 11 that includes a support substrate 2, a second layer 12 that includes a piezoelectric...
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WO/2022/231866A1 |
There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resona...
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WO/2022/228384A1 |
The present invention relates to a bulk acoustic resonator, comprising: a substrate; a piezoelectric layer; an acoustic mirror; a bottom electrode; a top electrode; and a single-crystal piezoelectric layer provided between the bottom ele...
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WO/2022/227347A1 |
Embodiments of the present application disclose a band-stop filter and a multi-frequency band-stop filter. The band-stop filter comprises at least one band-stop filter unit. The band-stop filter units each comprise an input port, an outp...
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WO/2022/230682A1 |
The present invention limits reduction in isolation between terminals. A high frequency module (1) is provided with a mounting substrate (3), a first electronic component (4A) and a second electronic component (4B), a resin layer (51), a...
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WO/2022/228452A1 |
The present invention relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein a conductive layer is further provided on the edge, surround...
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WO/2022/231865A1 |
There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resona...
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WO/2022/227756A1 |
The present application belongs to the technical field of acoustic wave frequency selection, and discloses a resonator and an electronic component. The resonator comprises a substrate (1), a first electrode layer (2), a piezoelectric lay...
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WO/2022/224862A1 |
Provided is an elastic wave device that is not prone to deterioration of device characteristics. The elastic wave device 1 has: a piezoelectric film 5 provided directly or indirectly on a high-acoustic velocity material layer 3; and an...
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WO/2022/224740A1 |
Provided is a ladder-type filter capable of enhancing frequency-temperature characteristics. A ladder-type filter 1 of the present invention is provided with: a piezoelectric substrate 2; series arm resonators S1-S5 configured in the p...
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WO/2022/222723A1 |
Provided in the embodiments of the present application are a filter structure and an electronic device. In the filter structure, an intermediate component is provided between a chip and a circuit board, a first filter component is provid...
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WO/2022/224972A1 |
An elastic wave device provided with a support substrate having a thickness in a first direction, a piezoelectric layer provided in the first direction of the support substrate, and a functional electrode provided on the piezoelectric la...
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WO/2022/224470A1 |
A resonator (10) includes a piezoelectric layer having a first surface and a second surface that are opposite to each other, an IDT electrode (7) disposed on the side of the first surface of the piezoelectric layer (5), and a high sound ...
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WO/2022/222570A1 |
A resonator package and an oscillator, relating to the technical field of temperature control of resonators. The resonator package comprises a first housing (1), a resonator (2), at least one first heater (3), and at least one second hea...
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WO/2022/224973A1 |
This elastic wave device comprises: a support substrate having a thickness in a first direction; a piezoelectric layer provided in the first direction of the support substrate; a functional electrode provided on the piezoelectric layer; ...
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WO/2022/222450A1 |
The present invention belongs to the technical field of resonator preparation. Disclosed are an FBAR resonator and a preparation method therefor. The preparation method for the FBAR resonator comprises: preparing a germanium thin film; p...
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WO/2022/218376A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the ...
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WO/2022/220155A1 |
Provided is an elastic wave device that can curb any variance in the difference in the amount of trimming of a frequency-adjusting film between elastic wave resonators, and that can curb any variance in frequency. This elastic wave dev...
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WO/2022/220222A1 |
Provided is an elastic wave device capable of reducing variations in fractional bandwidth due to variations in the width of the electrode fingers of IDT electrodes. An elastic wave device 1 comprises: a piezoelectric film 5 provided di...
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WO/2022/221771A1 |
A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm havin...
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WO/2022/215547A1 |
The present invention addresses the problem of suppressing degradation of characteristics, even when two components that are connected to a ground electrode are transmitting at the same time. This high-frequency module (1) comprises a mo...
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WO/2022/214254A2 |
An apparatus and method for making an acoustic filter package where the apparatus includes a base layer; a support layer disposed on the base layer; a piezoelectric structure disposed on the support layer; wherein the piezoelectric struc...
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WO/2022/209525A1 |
Provided is an elastic wave device with which it is possible to suppress variations in a joint area of a support and to increase reliability. An elastic wave device 10 according to the present invention is provided with: a piezoelectri...
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WO/2022/209734A1 |
A high-frequency module (1A) comprises: a module substrate (91) having main surfaces (91a and 91b); a module substrate (92) having main surfaces (92a and 92b), the main surface (92a) being disposed so as to face the main surface (91b); a...
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WO/2022/209727A1 |
This high-frequency module (1A) comprises: a module substrate (80); a hybrid filter (11) for 5G-NR n77 having a first elastic wave resonator, a first inductor, and a first capacitor; and a filter (12) for 5G-NR n79 having a second elasti...
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WO/2022/212041A1 |
Radio frequency (RF) acoustic wave resonator (AWR) filter circuits and methods. Embodiments essentially de-couple the stopband or notch characteristics of an RF filter from the passband characteristics. Accordingly, the de-coupled parame...
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WO/2022/211103A1 |
This elastic wave device comprises: a support member having a support substrate and an intermediate layer formed on the support substrate; a piezoelectric layer having through-holes and disposed on the intermediate layer; a function elec...
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WO/2022/205150A1 |
Disclosed are a quartz resonator having a reinforcing structure and a fabrication method therefor, and an electronic device. The quartz resonator having a reinforcing structure of the present invention comprises: a substrate; a boss stru...
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WO/2022/210300A1 |
The present invention suppresses a decrease in characteristics. A hybrid filter (2) of a high-frequency module (1) comprises an elastic wave filter (20) and a first circuit (2C). A plurality of circuit elements (21) of the first circuit ...
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WO/2022/209862A1 |
Provided is an elastic wave device in which adjustable capacitance is achieved without an increase in size. An elastic wave device 10 according to the present invention is provided with: a support member 13 including a first substrate ...
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