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WO/2023/231577A1 |
The present invention provides a shielded-gate trench MOSFET and a preparation method therefor. The shielded-gate trench MOSFET comprises a substrate, an epitaxial layer, a shielding dielectric layer, an interlayer dielectric layer, a so...
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WO/2023/233833A1 |
Provided is a semiconductor image sensor device in which the occurrence of leakage current due to interface states is prevented and which operates stably without a decrease in the detection sensitivity of a photodiode. On the surface s...
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WO/2023/231925A1 |
The present application relates to the technical field of semiconductor epitaxy. Provided in the embodiments of the present application are an epitaxial structure of a semiconductor, a semiconductor device and a preparation method theref...
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WO/2023/233262A1 |
A semiconductor device includes a silicon controlled rectifier (SCR) that has a Schottky anode contact which is used for minority carrier injection.
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WO/2023/234165A1 |
A multilayer structure 10 comprising a crystalline-oxide semiconductor film 11 comprising In as a main component and an insulating film 12 disposed in contact with the crystalline-oxide semiconductor film 11, wherein the crystalline-oxid...
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WO/2023/231382A1 |
The present application relates to the technical field of semiconductor device manufacturing. Provided are a positive-angle lapping gallium oxide Schottky diode device and a manufacturing method therefor. The manufacturing method compris...
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WO/2023/231502A1 |
The present invention provides a trench MOS device and a manufacturing method therefor. A doped protection ring of a first conduction type is formed in a substrate below the bottom of a well region of the first conduction type; shielding...
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WO/2023/233887A1 |
A silicon carbide substrate according to the present invention has a first main surface and a second main surface that is on the reverse side of the first main surface. First voids are present in the first main surface. The surface densi...
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WO/2023/231077A1 |
The present disclosure relates to the technical field of semiconductors, and provides a transistor and a manufacturing method therefor, and a memory, used for solving the technical problem of large reverse leakage currents of transistors...
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WO/2023/231072A1 |
The present disclosure relates to the technical field of semiconductors, and provided thereby are a transistor, a fabrication method therefor, and a memory, used for solving the technical problem of the small drive current of a transisto...
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WO/2023/234164A1 |
A laminate structure which has a crystalline oxide semiconductor film 11 having In as a principal component thereof, and a first insulating film 12 which is layered so as to contact the crystalline oxide semiconductor film 11, wherein th...
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WO/2023/233932A1 |
The purpose of the present invention is to provide a carbon nanotube layered structure that can be used to form a carbon nanotube film that serves as a functional region of an electronic element, and that allows the electronic element to...
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WO/2023/231075A1 |
Embodiments of the present invention relate to a semiconductor structure and a preparation method therefor. The preparation method comprises: providing a substrate; forming an ion implantation region in the substrate, a distance being fo...
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WO/2023/233760A1 |
This light-emitting device includes a first substrate provided with a first principal surface and a second principal surface on which a light-emitting element is disposed, and a second substrate joined to the first principal surface. A t...
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WO/2023/233693A1 |
Provided are a non-volatile memory cell and a non-volatile semiconductor storage device that achieve integration and size reduction. This non-volatile semiconductor storage device has a memory cell C in which a memory transistor MT, a dr...
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WO/2023/230751A1 |
The present disclosure relates to the technical field of semiconductors, and provides a ray detector and a manufacturing method therefor, and an electronic device, capable of solving the problem of the high manufacturing cost. The manufa...
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WO/2023/233757A1 |
Provided is a method for generating a fixed charge in an insulating film on the back channel side of a semiconductor device that has a channel layer including an oxide semiconductor, comprising forming the insulating film, followed by fo...
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WO/2023/231059A1 |
The present disclosure relates to the technical field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor, which are used for solving the technical problem of the stability of a semiconductor str...
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WO/2023/231065A1 |
Provided in the embodiments of the present disclosure is a semiconductor structure, comprising: a substrate and active pillars located above the substrate. The active pillars extend in a first direction, and the first direction is parall...
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WO/2023/233772A1 |
Provided is a pressure sensor device with which the possibility that discharged electricity will reach a detection element can be lowered. A pressure sensor device according to the present invention comprises: a base substrate (20); a de...
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WO/2023/231566A1 |
Embodiments of the present disclosure relate to the technical field of semiconductor epitaxy, and provide a semiconductor epitaxial structure and a preparation method therefor. The semiconductor epitaxial structure comprises a substrate,...
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WO/2023/233762A1 |
This method is for controlling fixed electric charges in an insulating layer used for a semiconductor device, and involves: performing ion injection into the surface layer portion of the insulating layer after the insulating layer has be...
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WO/2023/231395A1 |
A method for enhancing the stability of an N-type semiconductor by means of oxygen elimination, which method comprises: constructing an antioxidant layer on a surface of a semiconductor material, or blending an antioxidant with an N-type...
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WO/2023/233807A1 |
Provided is a semiconductor device capable of ensuring turn-off tolerance by suppressing carrier concentration in an active region near a gate common wiring region or a gate pad region. This semiconductor device comprises: a plurality of...
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WO/2023/233746A1 |
This semiconductor device has a substrate that has a first main surface, an electrode that is provided on the first main surface, and a passivation layer that covers the electrode, an opening through which a first region of the electrode...
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WO/2023/232494A1 |
Low-resistance electric current conduction at temperatures to above room temperature can possibly be attained by electrons of very high mobility in a conduction band of a solid filled from the ground state energy Eo to a limit energy EG>...
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WO/2023/234269A1 |
A magnetic memory element (100) comprises: a substrate (10); a spin Hall layer (12) which is stacked on the substrate (10) and is made of a material that exhibits the spin Hall effect (for example, a non-magnetic heavy metal) , the spin ...
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WO/2023/233802A1 |
Provided is a semiconductor device manufacturing method capable of suppressing variance in characteristics attributable to the concentration of carbon in a semiconductor substrate. This semiconductor device manufacturing method: includes...
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WO/2023/233473A1 |
A quantum device of the present invention has: a first waveguide; an optical resonator connected to the first waveguide; a first light source that introduces first light into the first waveguide; and a second light source that radiates s...
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WO/2023/233761A1 |
A method for controlling a fixed electric charge within an insulation film used in a semiconductor device, the method for controlling a fixed electric charge including forming a metal film on the surface of the insulation film, and injec...
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WO/2023/226043A1 |
A tunneling field effect transistor and a manufacturing method therefor, a display panel, and a display device. The tunneling field effect transistor comprises a gate electrode, a tunneling field active layer, a first electrode and a sec...
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WO/2023/226962A1 |
The present application provides a semiconductor device, an electronic chip, and an electronic device. In the present application, the balance of compressive stress and tensile stress of an epitaxial layer is implemented, the epitaxial l...
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WO/2023/228267A1 |
This electric field effect transistor (10) comprises, on a surface in the following order, a source electrode (111), a first gate electrode (112), and a drain electrode (113), and comprises, in a direction perpendicular to the surface, i...
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WO/2023/228702A1 |
[Problem] There has been a problem of addressing laser leakage onto the ground during power/energy transfer from the space to the ground for use in space solar power systems (SSPS) and the like. Further, a problem of lesser charge carrie...
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WO/2023/228611A1 |
This high-electron-mobility transistor comprises: a channel layer through which carriers flow; a pair of main electrodes which are respectively connected to one end and the other end of the channel layer; a barrier layer which is provide...
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WO/2023/227321A1 |
A first (254) and a second (254) source drain region, an upper source drain contact (266) connected to the first source drain region, a bottom source drain contact (282) connected to the second source drain region, a dielectric spacer (2...
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WO/2023/228587A1 |
The purpose of the present invention is, in an RC-IGBT, to provide a semiconductor device that can suppress a snapback phenomenon when the IGBT is on, and hole injection from the IGBT region to a diode region when the diode is conductive...
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WO/2023/228616A1 |
A semiconductor device (10) including: a metal oxide layer (130) that includes aluminum and is on an insulating surface; and an oxide semiconductor layer (140) that is on the metal oxide layer, wherein the oxide semiconductor layer inclu...
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WO/2023/228965A1 |
A terahertz device according to the present invention comprises: a semiconductor substrate that has a substrate front surface and a substrate back surface which is located on the opposite side from the substrate front surface; an active ...
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WO/2023/229272A1 |
The present invention provides a method for manufacturing an oxide transistor and an oxide transistor manufactured by the manufacturing method, the method comprising the steps of: forming a first channel layer by spraying gas containing ...
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WO/2023/228004A1 |
Provided is a semiconductor with a small occupied area. This semiconductor device has a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, a first insulating lay...
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WO/2023/226320A1 |
The present application discloses a Schottky diode device and a manufacturing method therefor. The Schottky diode device comprises: an epitaxial wafer having an epitaxial layer, the epitaxial layer comprising a first surface and a second...
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WO/2023/228586A1 |
Provided is a semiconductor device capable of preventing a flow of carriers due to an avalanche into a region where a switching element body is present, while controlling the location where the avalanche occurs, through the formation of ...
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WO/2023/227271A1 |
A first source drain region adjacent to a first transistor, a second source drain region adjacent to a second transistor, an upper source drain contact above the first source drain region, a bottom source drain contact below the second s...
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WO/2023/226179A1 |
Embodiments of the present disclosure provide a transistor and a preparation method therefor, and a memory. The transistor comprises: a substrate, the substrate comprising an active region; a gate electrode structure, the gate electrode ...
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WO/2023/133997A9 |
A method for preparing a semiconductor device, and a semiconductor device. The preparation method comprises: providing a semiconductor substrate, the semiconductor substrate comprising a first region and a second region; forming a first ...
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WO/2023/184421A9 |
A thin film transistor, a display substrate and a display apparatus. The thin film transistor comprises: a gate electrode (20), which is arranged on a base substrate (10); an active layer (30), which is located between the gate electrode...
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WO/2023/228473A1 |
This silicon carbide semiconductor device is provided with a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, wherein: the silicon carbide substrate has a drift region ha...
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WO/2023/225831A1 |
The present disclosure relates to the technical field of semiconductors, and provides a nanowire, an array substrate preparation method, an array substrate, and an electronic device, capable of solving the problem that the area of an act...
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WO/2023/227992A1 |
The present invention provides a semiconductor device that achieves both low power consumption and high performance. Provided is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, a first conduct...
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