Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/228473
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device is provided with a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, wherein: the silicon carbide substrate has a drift region having a first conductivity type; the silicon carbide substrate further has an electric field relaxation region provided between the first main surface and the second main surface and having a second conductivity type different from the first conductivity type; the drift region has a first region located between the electric field relaxation region and the first main surface, a second region that is adjacent to the first region within a plane parallel to the first main surface, a third region that is located between the second region and the second main surface, is connected to the second region, and is adjacent to the electric field relaxation region within a plane parallel to the first main surface, and a fourth region that is located between the electric field relaxation region, the third region, and the second main surface, and is connected to the third region; a first maximum value of the effective concentration of the first conductivity-type impurity in the first region is higher than a second maximum value of the effective concentration of the first conductivity-type impurity in the second region; a third maximum value of the effective concentration of the first conductivity-type impurity in the third region is equal to or less than the second maximum value; and a fourth maximum value of the effective concentration of the first conductivity-type impurity in the fourth region is equal to or less than the third maximum value.
Inventors:
UCHIDA KOSUKE (JP)
Application Number:
PCT/JP2023/002283
Publication Date:
November 30, 2023
Filing Date:
January 25, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/265; H01L21/336; H01L29/06; H01L29/12
Domestic Patent References:
| WO2020031446A1 | 2020-02-13 | |||
| WO2019155783A1 | 2019-08-15 |
Foreign References:
| JP2020136416A | 2020-08-31 | |||
| JP2021184412A | 2021-12-02 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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