Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/083266
Kind Code:
A1
Abstract:
Embodiments of the invention provide a semiconductor device and an electronic device. The semiconductor device comprises a plurality of layer structures arranged in a stacked manner. The plurality of layer structures comprise, sequentially arranged, a substrate, a thin film silicon layer and a device layer. The substrate is provided with a cavity. The thin film silicon layer is arranged on the upper surface of the substrate. The device layer is arranged on the thin film silicon layer. The device layer forms a transducer structure. At least one layer structure is provided with a temperature compensation layer. The temperature compensation layer is located above the thin film silicon layer in the stacking direction. The temperature compensation layer is a doped silicon oxide layer, and the dopant of the temperature compensation layer comprises at least one of fluorine, hydrogen, methyl, methylene, chlorine, carbon, nitrogen, phosphorus and sulfur. By means of embodiments of the present application, the temperature coefficient can be remarkably increased, such that the temperature compensation effect can be met, and the stability of the semiconductor device is improved.
Inventors:
PANG WEI (CN)
YANG QINGRUI (CN)
YANG QINGRUI (CN)
Application Number:
PCT/CN2023/136908
Publication Date:
April 25, 2024
Filing Date:
December 06, 2023
Export Citation:
Assignee:
GUANGZHOU LEYI INVEST CO LTD (CN)
International Classes:
H03H9/02
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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