Title:
PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/083267
Kind Code:
A1
Abstract:
Provided are a preparation method for a semiconductor structure, a semiconductor structure, and an electronic device, relating to the technical field of semiconductor manufacturing, and being used for solving the technical problems of poor performance uniformity and low yield of semiconductor structures. The preparation method for the semiconductor structure comprises: forming a heavily doped monocrystalline silicon layer on a substrate by means of epitaxial growth; forming a cavity on a first bottom silicon layer; after inverting the substrate, bonding the doped monocrystalline silicon layer with the first bottom silicon layer; and removing at least part of the substrate, so as to form a thin film silicon layer on the first bottom silicon layer, wherein the thin film silicon layer at least includes a doped monocrystalline silicon layer having a partial thickness. The controllability and accuracy of the silicon layer doping concentration in the semiconductor structure can be improved, so that the semiconductor structure performance consistency and yield, in particular the consistency of intra-chip, inter-chip, intra-batch and inter-batch frequency and temperature characteristics, can be improved.
Inventors:
PANG WEI (CN)
YANG QINGRUI (CN)
YANG QINGRUI (CN)
Application Number:
PCT/CN2023/136920
Publication Date:
April 25, 2024
Filing Date:
December 06, 2023
Export Citation:
Assignee:
GUANGZHOU LEYI INVEST CO LTD (CN)
International Classes:
H03H9/02; H03H3/02
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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