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WO/2023/190369A1 |
Provided is an elastic wave device capable of suppressing unnecessary waves. The elastic wave device 10 according to the present invention comprises: a support member that includes a support substrate; a piezoelectric layer 14 that is ...
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WO/2023/190610A1 |
The present invention suppresses cracking in a piezoelectric layer. This acoustic wave device is provided with: a support member having a support substrate; a piezoelectric layer provided in a first direction of the support member, the f...
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WO/2023/190655A1 |
Provided is an elastic wave device which, when used in a filter device, makes it possible to obtain a suitable filter waveform without an increase in size. An elastic wave device10 according to the present invention comprises: a first ...
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WO/2023/189835A1 |
The present invention provides a composite filter device capable of increasing the out-of-band attenuation of a band-pass filter. A composite filter device according to the present invention comprises: a piezoelectric substrate 2; a fi...
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WO/2023/189073A1 |
Provided is an elastic wave device capable of effectively reducing the electric resistance of an IDT electrode. The elastic wave device 1 comprises a piezoelectric substrate 2 and an IDT electrode 3 provided on the piezoelectric substr...
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WO/2023/191089A1 |
This elastic wave device comprises a plurality of elastic wave resonators. Each among the plurality of elastic wave resonators includes a support substrate, a piezoelectric layer provided on the support substrate, and a functional electr...
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WO/2023/186169A1 |
A resonator and a resonant system, which belong to the technical field of devices. The resonator comprises: a piezoelectric resonance portion, a single-crystal resonance portion and a coupling portion. The piezoelectric resonance portion...
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WO/2023/181757A1 |
Provided is an elastic wave device that can easily suppress color variation on a piezoelectric substrate. The elastic wave device 1 comprises: a support substrate 13; a piezoelectric layer 15 provided on the support substrate 13; an ID...
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WO/2023/181487A1 |
This crystal oscillation element (102) comprises: a crystal piece (110) having a pair of main surfaces (112, 114) facing each other; and a pair of excitation electrodes (120, 130) provided to the pair of main surfaces (112, 114) of the c...
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WO/2023/179898A1 |
A method of forming a composite substrate is provided. The method includes a mixed gas plasma activation process using oxygen and nitrogen including exposing a surface of a wafer and a surface of a piezoelectric material wafer in a plasm...
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WO/2023/182246A1 |
A bonded substrate according to the present disclosure comprises: a piezoelectric substrate that is formed of a piezoelectric material; a supporting substrate that is formed of a single crystal silicon; an intermediate layer that is form...
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WO/2023/174666A1 |
An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transfor...
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WO/2023/176814A1 |
In this ladder filter, a plurality of parallel resonators each connect an input terminal side or an output terminal side of one of a plurality of series resonators with a reference potential portion. Each of the plurality of parallel res...
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WO/2023/173900A1 |
The present invention provides a bulk acoustic resonator, comprising a cavity formed in a substrate or formed in a support layer on the substrate; and a lower electrode, a piezoelectric layer, and an upper electrode. An overlapping regio...
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WO/2023/176915A1 |
The present invention improves a filter characteristic. In a planar view of a first surface, a first metal foil substantially does not overlap with a signal line, and overlaps with a ground wiring that is ground-connected with a parallel...
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WO/2023/177584A1 |
One example includes an acoustic resonator filter system. The system includes a filter element arranged between a low-voltage rail and a filter-path node through which an RF input signal propagates to provide a filtered RF output signal....
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WO/2023/174667A1 |
An apparatus is disclosed for a bridge-type filter. In example aspects, the apparatus includes a filter circuit having a first port, a second port, and a filter core. The filter core is coupled between the first port and the second port....
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WO/2023/177009A1 |
The present technology provides a voltage controlled oscillator (VCO) for compensating for temperature on the basis of phase injection. According to a particular implementation example of the present technology, the phase of resonance fr...
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WO/2023/177585A1 |
One example includes an acoustic resonator filter system. The system includes a plurality of filter blocks. Each of the filter blocks can include a plurality of tunable filter elements. Each of the tunable filter elements can include an ...
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WO/2023/176761A1 |
[Problem] To provide a surface acoustic wave element that is environmentally friendly and has superior accuracy, and an electronic device, an electronic apparatus, and a system in which the surface acoustic wave element is used. [Solutio...
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WO/2023/177581A1 |
One example includes an acoustic resonator filter bank system. The system includes a multiplex passive filter that is configured to provide a plurality of filtered versions of a radio frequency (RF) input signal. The system also includes...
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WO/2023/169962A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (100) comprising a supporting substrate (102) having a first acoustic impedance; a piezoelectric layer (104), in particular made of lithium tantalate, lithium niobate,...
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WO/2023/171108A1 |
A film structure (10) has: a Si layer (12a); a ZrO2 layer (12b) which is a buffer film formed on the Si layer (12a) and contains ZrO2; and a piezoelectric film (11) formed on the ZrO2 layer (12b), wherein the Si layer (12a) is an SOI lay...
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WO/2023/171721A1 |
The present invention inhibits warping and destruction of a piezoelectric layer while suppressing spurious. This acoustic wave device comprises: a piezoelectric layer that has a first main surface and a second main surface which is on th...
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WO/2023/169209A1 |
Provided in the present utility model are a surface acoustic wave resonator and a surface acoustic wave filter, which are used for solving the technical problem of a complex preparation process in the prior art. The surface acoustic wave...
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WO/2023/171025A1 |
A resonant device (1) comprising: a first substrate (50) that includes a first silicon substrate (20) and a resonator (10); a second substrate (30) that is disposed on the side of the first substrate (50) on which the resonator (10) is p...
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WO/2023/169653A1 |
This disclosure relates to a robust acoustic resonator device with a piezoelectric plate supported by a solid substrate. The device comprises a substrate, a non-piezoelectric substrate layer on the substrate with high acoustic velocity, ...
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WO/2023/171741A1 |
The present invention is to improve the frequency characteristics of elastic wave filters. This elastic wave filter comprises, as oblique resonators, series resonators and parallel resonators. In the series resonators: the duty of each o...
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WO/2023/171161A1 |
An elastic wave device (1) comprises: a piezoelectric substrate (100) that has an external terminal electrode (160) and main surfaces (101,102); a filter (10) that includes a resonator (120) disposed on the main surface (101); and a cond...
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WO/2023/171715A1 |
The present invention provides: an elastic wave device having excellent frequency characteristics; a branching filter including the elastic wave device; a communication device including the elastic wave device; and a method for manufactu...
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WO/2023/167034A1 |
The present invention improves loss characteristics of an elastic wave element. This elastic wave element comprises: a piezoelectric film; an IDT electrode located on the piezoelectric film; a low sound velocity film exhibiting a sound v...
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WO/2023/167101A1 |
In the present invention, a semiconductor element having a structure in which a wiring layer, an element forming layer, and a first insulating layer are layered one another is mounted on a first surface of a module substrate in an orient...
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WO/2023/167316A1 |
This elastic wave device comprises: a support substrate; a piezoelectric layer provided on the support substrate; a functional electrode provided on the piezoelectric layer; a cavity portion which is provided inside the support substrate...
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WO/2023/167221A1 |
In the present invention, a composite substrate has a piezoelectric layer and a low-acoustic-velocity film. The low-acoustic-velocity film spreads along the bottom surface of the piezoelectric layer, and has a lower acoustic velocity tha...
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WO/2023/165786A1 |
A method of exchanging quantum information between a photon and a micro/nano scale resonant structure is provided. The method comprises providing the resonant structure (15) in an optical waveguide (10). The method further comprises pass...
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WO/2023/162597A1 |
A duplexer (10) comprises: a piezoelectric substrate (50) having an upper surface (52) and a lower surface (51); a function element (120) disposed on the lower surface (51); a flat plate electrode (160) disposed on the upper surface (52)...
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WO/2023/162594A1 |
In order to reduce the spurious emission from an acoustic wave device using lamb waves, in this acoustic wave device using lamb waves at least a portion of an electrode is embedded in a piezoelectric substance.
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WO/2023/162979A1 |
Provided is an elastic wave device capable of improving a Q value and adjusting a frequency at which unnecessary waves are generated. An acoustic wave device 1 comprises: a piezoelectric substrate 2; and an IDT electrode 3 provided on ...
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WO/2023/162301A1 |
A resonator (10) equipped with a vibration part (120) configured to vibrate as the main vibration in a predetermined vibration mode, and formed on a silicon substrate (270) containing phosphorus (P), the silicon substrate (270) having a ...
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WO/2023/162566A1 |
The present invention is provided with: a piezoelectric body (10) that has a main surface (Sf1); a functional element (50) that is formed on the main surface (Sf1), and is included in an elastic wave device (110); a support layer (45) th...
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WO/2023/160905A1 |
An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structur...
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WO/2023/157958A1 |
The present invention suppresses cracking of a piezoelectric layer. This elastic wave device comprises: an elastic wave element comprising a piezoelectric layer that is thick in a first direction and has a first main surface and a second...
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WO/2023/157504A1 |
A crystal oscillator (100) has a frequency adjustment metal film (36) comprising a metal underlayer (36a) and a metal layer (36b) formed on the first main surface (301) of a second sealing member (30). In frequency adjustment of the crys...
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WO/2023/158714A1 |
A carrier aggregation circuit that includes a primary signal path for processing a first frequency band, the first frequency band being a TDD frequency band, and a secondary signal path for processing a second frequency band. The primary...
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WO/2023/159091A1 |
A filter device is provided that includes a substrate and a piezoelectric plate attached to the substrate. A conductor pattern (638a, 638b, 738a, 738b) is formed at a first surface of the piezoelectric plate and includes interdigital tra...
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WO/2023/155131A1 |
Provided in the embodiments of the present application are a bulk acoustic wave resonator, an acoustic filter and an electronic device. The present application relates to the technical field of semiconductors, and can improve the perform...
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WO/2023/156107A1 |
An apparatus is disclosed for a surface-acoustic-wave filter with an electrical conductor having a floating potential. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrod...
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WO/2023/155130A1 |
Provided in the embodiments of the present application are a surface acoustic wave resonator, an acoustic filter and an electronic device, relating to the technical field of semiconductors. The present application can improve the perform...
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WO/2023/157798A1 |
Provided is an elastic wave device capable of suppressing development of peeling of a piezoelectric layer and suppressing deterioration in electrical characteristics. An elastic wave device 1 is provided with: a support substrate 3; a ...
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WO/2023/151907A1 |
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing a SAW resonator (800) with a resonance frequency located at the upper stopband edge. One aspect is an apparatus includin...
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