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WO/2024/070893A1 |
Provided is an elastic wave device capable of more reliably suppressing the transverse mode. The elastic wave device comprises a piezoelectric layer provided on an acoustic reflection film, and an IDT provided thereon. The elastic wave...
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WO/2024/066021A1 |
The present application provides a resonator, a resonator assembly, a filter, an electronic device, and a manufacturing method. The resonator comprises: a substrate, provided with a first surface and a second surface which are opposite t...
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WO/2024/070711A1 |
The piezoelectric element according to the present invention is provided with a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a support base material, and includes an oxide layer provided on a pr...
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WO/2024/067087A1 |
A method for forming a bulk acoustic wave resonance apparatus. The method comprises: forming a first portion, which comprises: providing a first substrate; forming a piezoelectric layer, which is located above the first substrate; formin...
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WO/2024/070528A1 |
A wiring board according to the present invention comprises: an insulating board having a first surface and a second surface; a first external electrode and a third external electrode positioned at opposing corners of the first surface a...
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WO/2024/070851A1 |
A piezoelectric element according to the present invention comprises a first electrode, a piezoelectric layer containing a piezoelectric material doped with a metallic element, and a second electrode such that the first electrode, the pi...
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WO/2024/070712A1 |
A piezoelectric element according to the present invention comprises a first electrode, a piezoelectric layer including a piezoelectric material doped with Mg, and a second electrode that are stacked on a support substrate in this order....
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WO/2024/061071A1 |
A bulk acoustic wave resonance apparatus and a method for forming same, relating to the technical field of semiconductor manufacturing. The bulk acoustic wave resonance apparatus comprises: a substrate (200); an intermediate layer (201),...
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WO/2024/063072A1 |
Provided is a bonded substrate in which the generation of voids is suppressed and that has high bonding strength. An aspect of the present disclosure is directed to a bonded substrate in which a first substrate and a second substrate are...
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WO/2024/063696A1 |
A bulk acoustic wave, BAW, device comprises a piezoelectric layer (330) disposed between a first electrode layer (104A) and a sandwich electrode (106A). The sandwich electrode includes a first layer (114) of a first material having a fir...
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WO/2024/063697A2 |
A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second el...
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WO/2024/064524A1 |
A package comprising an acoustic device (102), a polymer frame (105) coupled to the acoustic device, a plurality of frame interconnects (142) located in the polymer frame, where the plurality of frame interconnects are coupled to the aco...
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WO/2024/061051A1 |
Disclosed in the present application are a laterally excited bulk acoustic resonator with phononic crystals, and a preparation method for same. The laterally excited bulk acoustic resonator comprises an interdigital electrode, a piezoele...
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WO/2024/063695A1 |
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One aspect is a device including first and second busbars, and electrode fingers coupled between the busbars, with electrode fingers ...
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WO/2024/059452A1 |
Disclosed are apparatuses and techniques for fabricating single or multi-die packages with sealed enclosures. In one or more aspects an apparatus includes a die; a perimeter metallization disposed on a perimeter of the die; a package sub...
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WO/2024/055980A1 |
A surface acoustic wave resonance device and a forming method therefor, relating to the technical field of semiconductors. The forming method comprises: providing a substrate; forming an intermediate layer on the substrate; bonding the i...
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WO/2024/057268A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate and having a bottom surface (140a) facing the bottom substrate and a top surface (140b) opposite to t...
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WO/2024/057267A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate, the piezoelectric layer having a bottom surface (140a) facing the bottom substrate and a top surface...
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WO/2024/057266A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate, the piezoelectric layer having a bottom surface (140a) facing the bottom substrate and a top surface...
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WO/2024/058904A2 |
The present disclosure relates to a bulk acoustic wave (BAW) resonator, which includes a bottom electrode, a top electrode, and a piezoelectric layer sandwiched between the bottom electrode and the top electrode. Herein, an active region...
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WO/2024/055388A1 |
The present disclosure relates to an acoustic resonator wherein each resonant element is at least partly coated with vertical electrodes on side walls of its top piezoelectric part and solidly mounted with its bottom part on an underlayi...
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WO/2024/053154A1 |
Systems and methods disclosed herein include a device with a bulk acoustic wave resonator and one or more trenches that are configured to impede the flow of acoustic energy to the bulk acoustic wave resonator.
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WO/2024/053311A1 |
The present invention improves isolation characteristics while achieving a low profile. In a first elastic wave filter (1), a first conductor (3) is interposed between the first elastic wave filter (1) and a second elastic wave filter (2...
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WO/2024/051945A1 |
The present disclosure relates to a spurious mode-free Surface Acoustic Wave (SAW) device that may be efficiently used (either alone or together with similar or other SAW devices) in Radio Frequency (RF) filters and multiplexers. Unlike ...
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WO/2024/044874A1 |
The present disclosure relates to the technical field of communications, and provides a bulk acoustic resonator and a manufacturing method therefor, and an electronic device. The bulk acoustic resonator of the present disclosure comprise...
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WO/2024/044926A1 |
The present disclosure relates to the technical field of radio frequency micro-electromechanical systems. Provided are a bulk acoustic resonator and a manufacturing method therefor, and a filter. The bulk acoustic resonator of the presen...
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WO/2024/047745A1 |
This vibration device comprises a first substrate, a second substrate, an intermediate layer, and an excitation electrode. The first substrate has a first surface. The second substrate has a second surface facing the first surface. The i...
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WO/2024/049349A1 |
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing bulk wave suppression in a stacked electroacoustic device. One aspect includes a first substrate (420) comprising a firs...
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WO/2024/048201A1 |
This vibration device comprises a first substrate, a second substrate, an intermediate layer, and an excitation electrode. The first substrate has a first surface. The second substrate has a second surface facing the first surface. The i...
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WO/2024/046099A1 |
A Lamb wave resonator (100) and a manufacturing method, a filter (10), a radio frequency module, and an electronic device (1). The Lamb wave resonator (100) serves as an element of the filter (10) and can be applied to a radio frequency ...
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WO/2024/046095A1 |
Embodiments of the present application provide a Lamb wave resonator and a preparation method therefor, a filter, a radio frequency module, and an electronic device. The Lamb wave resonator comprises a substrate, an acoustic wave reflect...
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WO/2024/041114A1 |
A surface acoustic wave filter, comprising: a support substrate (10), a piezoelectric layer, a resonator member (20) and a spurious-mode suppression member (30), wherein the piezoelectric layer is arranged on the support substrate (10); ...
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WO/2024/040468A1 |
The present disclosure provides a hybrid filter and a manufacturing method therefor, and a filtering device. The hybrid filter comprises a first substrate (100) and a second substrate (200) which are arranged opposite to each other; a fi...
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WO/2024/040679A1 |
The present application discloses a bulk acoustic resonator, a fabrication method therefor, a filter, and an electronic device. The bulk acoustic resonator comprises a substrate and an acoustic reflection structure, bottom electrode, pie...
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WO/2024/044106A1 |
The present disclosure relates to an acoustic wave device for asymmetric frequency bands and a manufacturing process for making the same. The disclosed acoustic wave device includes at least one first electrode (102:152), at least one se...
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WO/2024/043301A1 |
Provided is an elastic wave device that can reduce the size and suppress deterioration of filter characteristics of a ladder-type filter device having an elastic wave resonator that has a small capacitance and uses a thickness-shear mode...
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WO/2024/043343A1 |
Provided is an acoustic wave device capable of making a filter device smaller and reducing electric resistance in electrodes connected to potentials other than input and output potentials. An acoustic wave device 10 according to the pr...
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WO/2024/043300A1 |
Provided is an elastic wave device that makes it possible to facilitate downsizing of a filtering apparatus and to suppress degradation of filtering characteristics. An elastic wave device 10 according to the present invention is provi...
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WO/2024/043344A1 |
Provided is an elastic wave device with which a filter device can be reduced in size and the bandwidth of passband can be increased. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 made ...
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WO/2024/043347A1 |
Provided is an elastic wave device that can inhibit unnecessary waves near the resonant frequency or near the anti-resonant frequency, even when a configuration has been adopted in which a mass-addition film is provided to an edge region...
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WO/2024/040696A1 |
A resonator provided in the present application, comprising a substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The bottom electrode is located between the substrate and the piezoelectric layer, the piezoelectric...
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WO/2024/040678A1 |
A bulk acoustic resonator and a manufacturing method therefor, a filter, and an electronic device. The bulk acoustic resonator comprises a substrate (50), and acoustic reflection structures (40), bottom electrodes (10), a piezoelectric l...
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WO/2024/043346A1 |
The present invention addresses the problem of suppressing unwanted waves from occurring at a frequency lower than a resonant frequency and located near the resonant frequency in an acoustic wave device using bulk waves in a thickness sh...
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WO/2024/043342A1 |
Provided is an elastic wave device with which a filter device can be further reduced in size and an insertion loss can be reduced. An elastic wave device according to the present invention comprises: a piezoelectric film including a pi...
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WO/2024/043345A1 |
Provided is an elastic wave device that makes it possible to reduce the size of a filter apparatus and to increase the bandwidth of a pass band. A first elastic wave resonator 10 according to the present invention is provided with: a p...
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WO/2024/043299A1 |
Provided is an elastic wave device that makes it possible to miniaturize a filter device and increase the bandwidth of a passband. An elastic wave device 10 according to the present invention comprises: a piezoelectric film that includ...
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WO/2024/038831A1 |
Provided is an elastic wave device with which size reduction of a filter device can be achieved and electrical resistance can be reduced. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14;...
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WO/2024/039701A1 |
Drift-diffusion dynamics is investigated in a one-dimensional (1D) exciton guide at room temperature. Spatial engineering of the exciton energy in a WSe2 monolayer is achieved using local strain to confine as well as direct exciton trans...
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WO/2024/038875A1 |
Provided is an elastic wave device that makes it possible to achieve miniaturization of a filter device, and to reduce insertion loss. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 of ...
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WO/2024/032882A1 |
Embodiments of the invention relate to an acoustic resonator device (100) for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device (100) has a composite piezoelectrical platelet...
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