VERTICAL CAVITY LIGHT-EMITTING ELEMENT

WIPO Patent Application WO/2023/022005

A1

Provided is a vertical cavity light-emitting element that has high emission efficiency. A surface-emitting laser of the present invention comprises: a gallium nitride-based semiconductor substrate; a first multilayer mirror formed on the substrate; a semiconductor structure layer formed on the first multilayer mirror and including an active layer; a first electrode layer in electrical contact with the first semiconductor layer of the semiconductor structure layer; a second electrode layer formed on an upper surface of the semiconductor structure layer and in electrical contact with the second semiconductor layer of the semiconductor structure layer in one region of the upper surface; and a second multilayer mirror constituting a resonator between the first multilayer mirror and the second multilayer mirror. The upper surface of the semiconductor substrate is offset from a c-plane to the crystalline plane of either an M-plane or an A-plane. If the upper surface is offset to the M-plane, the one region has a shape with a longitudinal direction in an m-axis direction. If the upper surface is offset to the A-plane, the one region has a shape with a longitudinal direction in an a-axis direction.

TAKEUCHI TETSUYA (JP)
KURAMOTO MASARU (JP)

PCT/JP2022/029935

February 23, 2023

August 04, 2022

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UNIV MEIJO (JP)
STANLEY ELECTRIC CO LTD (JP)

H01S5/183; H01S5/343

WO2021140871A1	2021-07-15
WO2014013639A1	2014-01-23

JP2008028424A	2008-02-07
US20110182317A1	2011-07-28
US20070242715A1	2007-10-18
JP2013033921A	2013-02-14
JP2005093798A	2005-04-07
JP2019208004A	2019-12-05

LEXT, P.C. (JP)

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