Title:
ULTRAVIOLET LIGHT-EMITTING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/085201
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an ultraviolet light-emitting semiconductor element that has high efficiency and high output, and that exhibits less deterioration and superior element life. The ultraviolet light-emitting semiconductor element includes: an n-type AlGaN layer; an active layer; an AlY1Ga1-Y1N layer; and a p-type AlY2Ga1-Y2N layer (Y2≤Y1). The p-type AlY2Ga1-Y2N layer is co-doped with p-type and n-type impurities. The ratio of the n-type impurity concentration to the p-type impurity concentration satisfies 0.009≤(Nd/Na)<0.185. The AlY1Ga1-Y1N layer does not contain n-type impurities, or the n-type impurity concentration is less than the concentration in the p-type AlY2Ga1-Y2N layer. The p-type AlY2Ga1-Y2N layer is a composition gradient layer in which the Al composition decreases in a direction away from the AlY1Ga1-Y1N layer, and has a high n-type impurity concentration region layer and a low n-type impurity concentration region layer. The low n-type impurity-concentration region layer is formed on at least one interfacial side of the p-type AlY2Ga1-Y2N layer.
Inventors:
OBATA TOSHIYUKI (JP)
KINOSHITA TORU (JP)
KINOSHITA TORU (JP)
Application Number:
PCT/JP2023/037781
Publication Date:
April 25, 2024
Filing Date:
October 18, 2023
Export Citation:
Assignee:
STANLEY ELECTRIC CO LTD (JP)
International Classes:
H01L33/32; H01L33/06
Foreign References:
| JP2019160974A | 2019-09-19 | |||
| JP2019068072A | 2019-04-25 | |||
| US20140097444A1 | 2014-04-10 | |||
| JP2022167231A | 2022-11-04 |
Attorney, Agent or Firm:
DELOITTE TOHMATSU IP FIRM (JP)
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