Title:
SUBSTRATE FOR FORMING SEMICONDUCTOR DEVICE, SEMICONDUCTOR LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SUBSTRATE FOR FORMING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATED STRUCTURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/058180
Kind Code:
A1
Abstract:
The present invention relates to a substrate (1) which is for forming a semiconductor device, and has: a diamond substrate (10); and a silicon carbide layer (20) disposed on a portion or the entirety of one surface (10a) of the diamond substrate (10), wherein the thickness of the silicon carbide layer (20) is at most 20 nm, and an arithmetic mean roughness Ra of a surface (20a) of the silicon carbide layer (20) is at most 0.5 nm.
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Inventors:
SHIGEKAWA NAOTERU (JP)
LIANG JIANBO (JP)
LIANG JIANBO (JP)
Application Number:
PCT/JP2023/033217
Publication Date:
March 21, 2024
Filing Date:
September 12, 2023
Export Citation:
Assignee:
UNIV OSAKA PUBLIC CORP (JP)
International Classes:
H01L21/02; B23K20/00; B32B9/00; H01L21/20; H01L21/203; H01L29/80
Domestic Patent References:
| WO2023047691A1 | 2023-03-30 |
Foreign References:
| JP2020109796A | 2020-07-16 | |||
| US20140159055A1 | 2014-06-12 | |||
| US20100178719A1 | 2010-07-15 | |||
| JP2018514498A | 2018-06-07 | |||
| JP2018049868A | 2018-03-29 |
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
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