Title:
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
Document Type and Number:
WIPO Patent Application WO/2024/066384
Kind Code:
A1
Abstract:
A magnetic random access memory (MRAM) apparatus includes a magnetic tunnel junction (MTJ) stack; a spin-orbit-torque (SOT) layer that underlies the MTJ stack; and a dielectric pillar that underlies the SOT layer and the MTJ stack. The SOT layer has a stepped profile.
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Inventors:
HASHEMI POUYA (US)
SAFRANSKI CHRISTOPHER (US)
SAFRANSKI CHRISTOPHER (US)
Application Number:
PCT/CN2023/094118
Publication Date:
April 04, 2024
Filing Date:
May 15, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
G11C11/16
Attorney, Agent or Firm:
LIU , SHEN & ASSOCIATES (CN)
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