Title:
SILICON NITRIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2024/084631
Kind Code:
A1
Abstract:
[Problem] To reduce volume shrinkage during cooling after sintering so as to reduce voids in a silicon nitride sintered body and reduce warpage of the silicon nitride sintered body. [Solution] Provided is a silicon nitride sintered body in which is used a material obtained by adding, to silicon nitride powder, 2 to 3 mass% of MgO as a sintering aid, and 2.7 to 4 mass% of a rare earth oxide (the amount thereof is greater than the MgO) having an oxidation number of 3, the material being sintered, and the silicon nitride sintered body comprising a silicon nitride and a grain boundary phase formed from the sintering aid, wherein the grain boundary phase has an amorphous structure, and from among the peak of a crystalline compound in the grain boundary phase, in which the diffraction angle 2θ is in a range of 28° to 32° in an X-ray diffraction pattern obtained using an X-ray diffraction device provided with a semiconductor detector, the largest integral intensity is 2.4% or less with respect to the integral intensity of the silicon nitride (101) plane.
Inventors:
MATSUMOTO OSAMU (JP)
TAKAHASHI MITSUTAKA (JP)
TAKAHASHI MITSUTAKA (JP)
Application Number:
PCT/JP2022/038967
Publication Date:
April 25, 2024
Filing Date:
October 19, 2022
Export Citation:
Assignee:
MARUWA KK (JP)
International Classes:
C04B35/587; H01L23/15; H01L23/373; H05K1/03
Domestic Patent References:
| WO2021117829A1 | 2021-06-17 | |||
| WO2020203787A1 | 2020-10-08 |
Foreign References:
| JP2019052072A | 2019-04-04 | |||
| JP2018024548A | 2018-02-15 |
Attorney, Agent or Firm:
MATSUBARA Hitoshi (JP)
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