Title:
SILICON NITRIDE SINTERED BODY, WEAR-RESISTANT MEMBER, SUBSTRATE FOR SEMICONDUCTOR DEVICES, AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2024/070470
Kind Code:
A1
Abstract:
The present invention provides a silicon nitride sintered body which enables firing at low temperatures, while having high strength. A silicon nitride sintered body according to one embodiment of the present invention contains 0.1% by mass to 10% by mass of zirconium in terms of oxide. With respect to the XRD analysis (2θ) of an any given cross-section of the silicon nitride sintered body, if I35.3 is the maximum peak intensity detected at 35.3° ± 0.2° on the basis of α-form silicon nitride crystal grains, I27.0 is the maximum peak detected at 27.0° ± 0.2° on the basis of β-form silicon nitride crystal grains, and I33.9 is the maximum peak detected at 33.9° ± 0.2° on the basis of zirconium nitride, 0.01 ≤ I35.3/I27.0 ≤ 0.5 and 0 ≤ I33.9/I27.0 ≤ 1.0 are satisfied.
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Inventors:
FUKASAWA TAKAYUKI (JP)
AOKI KATSUYUKI (JP)
HOUTSUKI NAOTO (JP)
YAMAGATA YOSHIHITO (JP)
AOKI KATSUYUKI (JP)
HOUTSUKI NAOTO (JP)
YAMAGATA YOSHIHITO (JP)
Application Number:
PCT/JP2023/031775
Publication Date:
April 04, 2024
Filing Date:
August 31, 2023
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
C04B35/596; C04B35/64; F16C33/24; F16C33/32; H05K1/03
Foreign References:
| JP2002284586A | 2002-10-03 | |||
| JPS54148010A | 1979-11-19 | |||
| JPH0733532A | 1995-02-03 | |||
| JPH02296771A | 1990-12-07 | |||
| JP2008024579A | 2008-02-07 | |||
| JPS59199582A | 1984-11-12 |
Attorney, Agent or Firm:
IX PATENT LAW FIRM, P.C. (JP)
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