SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION

WIPO Patent Application WO/2023/162780

A1

The purpose of the present invention is to provide: a semiconductor substrate production method using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. This semiconductor substrate production method includes a step in which a resist underlayer film-forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is formed directly or indirectly on the resist underlayer film formed in the application step, and a step in which etching is performed using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound including a boron atom.

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WO/1999/043685	COMPOUNDS HAVING AN IONIC STRUCTURE USED AS CONSTITUENT OF AN OLEFIN POLYMERISATION CATALYST
JP2014028769	METHOD FOR INTRODUCING [11C]-LABELED CARBONYL GROUP INTO AROMATIC RING, [11C]-LABELED AM80 AND DERIVATIVE THEREOF AND PROCESS FOR PRODUCING [11C]-LABELED CARBONYL COMPOUND

NAKATSU HIROKI (JP)
NAGANAWA ATSUKO (JP)
YAMADA SHUHEI (JP)
UEDA KANAKO (JP)

PCT/JP2023/004990

August 31, 2023

February 14, 2023

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JSR CORP (JP)

C07F5/02; G03F7/11; G03F7/40

WO2020153278A1	2020-07-30
WO2022030316A1	2022-02-10
WO2011034062A1	2011-03-24
WO2019177009A1	2019-09-19

JP2013114059A	2013-06-10
JP2013137512A	2013-07-11
JP2000352824A	2000-12-19

UNIUS PATENT ATTORNEYS OFFICE (JP)

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