Title:
SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/165990
Kind Code:
A1
Abstract:
The present invention provides a semiconductor manufacturing device with which it is possible to use a complex gas to etch, at a high speed and a high accuracy, a metal film containing a transition metal element. This semiconductor manufacturing device has: a vacuum container 60; a processing chamber 1 provided in the vacuum container, a sample 3 that has formed thereon a metal film containing a transition metal element being placed on a stage 4 installed in the processing chamber 1; and a vaporization chamber 2 provided in the vacuum container, a vaporization nozzle unit 70 for vaporizing a complex gas raw material liquid fed from the exterior being installed in the vaporization chamber 2. A complex gas obtained by vaporizing the complex gas raw material liquid is introduced into the processing chamber, and the metal film on the sample is etched.
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Inventors:
YAMAGUCHI YOSHIHIDE (JP)
FUJISAKI SUMIKO (JP)
FUJISAKI SUMIKO (JP)
Application Number:
PCT/JP2019/005262
Publication Date:
August 20, 2020
Filing Date:
February 14, 2019
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2018186149A | 2018-11-22 | |||
| JP2017084965A | 2017-05-18 | |||
| JP2001332540A | 2001-11-30 | |||
| JPH08157296A | 1996-06-18 | |||
| JP2000223481A | 2000-08-11 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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