Title:
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/085017
Kind Code:
A1
Abstract:
The present invention provides a plasma processing apparatus which is provided with: a plasma processing chamber; an antenna which is provided on the upper part of or above the plasma processing chamber; an RF power supply which is electrically connected to the antenna and is configured such that the frequency of the output power can be controlled; and a control unit. The RF power supply outputs a first output power which has a first frequency, and a second output power which has a second frequency and which is lower than the output power having the first frequency. The control unit executes: (a) a process for sweeping the second frequency, and searching for and identifying the resonance point; and (b) a process for tuning the first frequency to the resonance point.
Inventors:
TAI MASAKI (JP)
Application Number:
PCT/JP2023/036707
Publication Date:
April 25, 2024
Filing Date:
October 10, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/505; H01L21/3065; H05H1/46
Foreign References:
| JP2020527822A | 2020-09-10 | |||
| JP2022532159A | 2022-07-13 | |||
| JP2021534556A | 2021-12-09 | |||
| JP2014239029A | 2014-12-18 |
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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